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1. 发明公开

EP1549357A1 WORKPIECE PROCESSING SYSTEM 有权
标题翻译：工件加工系统
公开(公告)号：EP1549357A1
公开(公告)日：2005-07-06
申请号：EP03783419.9
申请日：2003-11-13
申请人： SEMITOOL, INC.
发明人： BREESE, Ronald, G. , SCRANTON, Dana, R. , BERGMAN, Eric, J. , BARTKOSKI, Michael, E. , GROVE, Coby, S.
IPC分类号： A61L9/00 , A61L2/00 , B01J19/00 , A62B7/08 , B01J19/08
CPC分类号： A61L2/202 , B01D53/86 , B01D2257/106 , B08B3/08 , B08B2203/005 , H01L21/67017 , H01L21/67023 , H01L21/67028 , H01L21/67034 , H01L21/6704 , H01L21/67051
摘要： A workpiece processing system for processing semiconductor wafers and other flat media includes a stand-alone processing unit having two or more modules vertically stacked on top of one another. A first module includes an ozone generator, a DI water supply, a purge gas/drying gas supply, and optionally includes an ammonium hydroxide generator. A second module is preferably stacked on top of the first module and includes a processing chamber in communication with the devices in the first module. The processing chamber preferably includes a rotor for holding and rotating workpieces, one or more spray manifolds, an ozone destructor, an anti-static generator, and/or any other suitable workpiece-processing devices. The rotor is preferably designed to hold two workpiece-carrying cassettes each capable of holding up to 25 workpieces. A third module is preferably stacked on top of the second module and includes the system electronics and controls.

2. 发明公开

EP1274963A1 METHOD AND APPARATUS FOR HIGH-PRESSURE WAFER PROCESSING AND DRYING 审中-公开
标题翻译：方法和设备对于高压处理和干燥WAFERS
公开(公告)号：EP1274963A1
公开(公告)日：2003-01-15
申请号：EP00988450.3
申请日：2000-12-29
申请人： SEMITOOL, INC.
发明人： BERGMAN, Eric, J. , SHARP, Ian , MEUCHEL, Craig, P. , WOODS, H., Frederick
IPC分类号： F26B3/34 , B26B3/00 , F26B5/14 , F26B21/06 , F26B13/00 , F26B19/00 , B08B6/00 , B08B5/04 , B08B9/00 , B08B3/00
CPC分类号： H01L21/67034 , H01L21/67028 , H01L21/67057 , H01L21/67772 , H01L21/67775
摘要： A method and apparatus for high pressure drying of semiconductor wafers includes the insertion of a wafer (50) into an open vessel (52), the immersion of the wafer in a liquid (56), pressure sealing of the vessel, pressurization of the vessel with an inert gas (59), and then the controlled draining of the liquid using a moveable drain (54) that extracts water from a depth maintained just below the gas-liquid interface. Thereafter, the pressure may be reduced in the vessel and the dry and clean wafer may be removed. The high pressure suppresses the boiling point of liquids, thus allowing higher temperatures to be used to optimize reactivity. Megasonic (222) waves are used with pressurized fluid to enhance cleaning performance. Supercritical substances are provided in a sealed vessel containing a wafer to promote cleaning and other treatment.

3. 发明授权

EP0528995B1 SEMICONDUCTOR PROCESSOR APPARATUS WITH DYNAMIC WAFER VAPOR TREATMENT AND PARTICLE VOLATILIZATION 失效
标题翻译：装置生产具有动态蒸汽处理和TEILCHENVERFLÜCHTIGUNG半导体层
公开(公告)号：EP0528995B1
公开(公告)日：1998-07-22
申请号：EP91911521.2
申请日：1991-04-19
申请人： SEMITOOL, INC.
发明人： BERGMAN, Eric, J. , REARDON, Timothy, J. , THOMPSON, Raymon, F. 275 Tamarack Terrace , OWCZARZ, Aleksander
IPC分类号： H01L21/00
CPC分类号： H01L21/68728 , G11B7/26 , H01L21/67023 , H01L21/67075 , H01L21/6708 , H01L21/67086 , H01L21/68785
摘要： Disclosed are apparatuses and methods for improved processing of semiconductor wafers (20) and the like using vapor phase processing chemicals, particularly aqueous hydrofluoric acid etchants. Homogeneous vapor mixtures are generated from homogeneous liquid mixtures. Means for recirculating, mixing and agitating the liquid phase reactants (40) are provided. In some embodiments the liquid phase is advantageously circulated through a chemical trench within the processing bowl (14). Exposure of wafers to vapors from the chemical trench can be controlled by a vapor control valve which is advantageously the bottom of the processing chamber. The wafer is rotated or otherwise moved within the processing chamber to provide uniform dispersion of the homogeneous reactant vapors across the wafer surface and to facilitate vapor circulation to the processed surface. A radiative volatilization processor can be utilized to volatilize reaction by-products which form under some conditions. The apparatuses provide efficient uniform etching with low particle count performance.

4. 发明授权

EP1100630B1 PROCESS AND APPARATUS FOR TREATING A WORKPIECE SUCH AS A SEMICONDUCTOR WAFER 有权
标题翻译：方法和装置处理工件如半导体晶片
公开(公告)号：EP1100630B1
公开(公告)日：2004-02-18
申请号：EP99918658.8
申请日：1999-04-16
申请人： SEMITOOL, INC.
发明人： BERGMAN, Eric, J. , MIGNON, P., Hess
IPC分类号： B08B3/08 , B08B3/02 , B08B3/04 , H01L21/00
CPC分类号： H01L21/02052 , B08B3/02 , B08B3/08 , B08B2203/005 , B08B2230/01 , H01L21/6704
摘要： A novel chemistry and application technique used in a chemical process sequence to address the contamination concerns of the microelectronic fabrication industry is set forth. These concerns are namely: minimizing contamination for organics, particles, metal/ions, and silicon dioxide. Generally stated, cleaning of workpieces (20), such as semiconductor wafers, is accomplished by delivery of a chemical stream to the workpiece surface (20). Ozone is delivered either into the liquid process stream (70) or into the process environment (15). The chemical stream, which may be in the form of a liquid or vapor, is applied to the wafer in a system which enables control of the boundary layer which forms on the workpiece surface (20). The chemical stream may include components such as ammonium hydroxide for simultaneous particle and organic removal, another chemical to raise the pH of the solution, or other chemical additives designed to accomplish one or more specific cleaning tasks.

5. 发明公开

EP0528995A1 SEMICONDUCTOR PROCESSOR APPARATUS WITH DYNAMIC WAFER VAPOR TREATMENT AND PARTICLE VOLATILIZATION 失效
标题翻译：装置生产具有动态蒸汽处理和TEILCHENVERFLÜCHTIGUNG半导体层。
公开(公告)号：EP0528995A1
公开(公告)日：1993-03-03
申请号：EP91911521.0
申请日：1991-04-19
申请人： SEMITOOL, INC.
发明人： BERGMAN, Eric, J. , REARDON, Timothy, J. , THOMPSON, Raymon, F. 275 Tamarack Terrace , OWCZARZ, Aleksander
IPC分类号： H01L21 , G11B7
CPC分类号： H01L21/68728 , G11B7/26 , H01L21/67023 , H01L21/67075 , H01L21/6708 , H01L21/67086 , H01L21/68785
摘要： Appareils et procédés de traitement amélioré de tranches de semiconducteur (20) et analogue utilisant des agents chimiques de traitement en phase vapeur, notamment des agents de gravure d'acide hydrofluorique aqueux. On produit des mélanges en phase vapeur homogènes à partir de mélanges liquides homogènes. Des moyens de recyclage, de mélange et d'agitation des réactifs de phase liquide (40) sont décrits. Dans certains modes de réalisation il est avantageux de faire circuler la phase liquide dans une tranchée chimique à l'intérieur de la cuvette de traitement (14). On peut réguler l'exposition des tranches à des vapeurs provenant de la tranchée chimique à l'aide d'une vanne de régulation de vapeur avantageusement constituée par la partie inférieure de la chambre de traitement. La tranche est mise en rotation ou autrement déplacée à l'intérieur de la chambre de traitement afin d'assurer une dispersion uniforme des vapeurs de réactifs homogènes sur la surface de la tranche, et afin de faciliter la circulation de vapeurs sur la surface traitée. On peut utiliser un dispositif de traitement par volatilisation radiative afin de volatiliser les produits dérivés de la réaction se fromant dans certaines conditions. Les appareils assurent une gravure uniforme et efficace ne produisant que peu de particules.

6. 发明公开

EP1242778A1 VAPOR ASSISTED ROTARY DRYING METHOD AND APPARATUS 审中-公开
标题翻译： STEAM支旋转干燥方法及其设备
公开(公告)号：EP1242778A1
公开(公告)日：2002-09-25
申请号：EP00967040.7
申请日：2000-09-28
申请人： SEMITOOL, INC.
发明人： BERGMAN, Eric, J.
IPC分类号： F26B5/08 , F26B17/24
CPC分类号： H01L21/02052 , H01L21/67034 , Y10S134/902
摘要： A process for drying semiconductor wafers includes loading a wafer (160) wetted with rinsing fluid into a rotor (152) and orientating the wafer along a substantially vertical plane. A gas saturated with a solvent vapor (135) is passed over the wafer surfaces until condensation forms on the wafer (160) and displaces residual fluid. The rotation of the wafer (160) by the rotor (152) at a first rotational speed aids the flushing and displacement of residual fluid. The passage of a dry gas over the wafer (160) combined with the rotation of the wafer (160) at a second rotation speed promotes drying of solvent condensed on the wafer (160). The first rotational speed is limited to a rate that does not cause the condensed solvent film to evaporate as quickly as it forms. The second rotation speed may exceed that of the first rotation speed to complete the drying of the wafer (160). The rotor (152) and process chamber (150) are optionally pre-saturated with condensed solvent vapor prior to the introduction of a wafer (160) to hasten the drying process. The process is suitable for quickly and cleanly drying patterned wafers having both hydrophobic and hydrophilic surfaces.

7. 发明公开

EP1214557A1 THERMOCAPILLARY DRYER 审中-公开
标题翻译：热空气干燥器
公开(公告)号：EP1214557A1
公开(公告)日：2002-06-19
申请号：EP00959553.9
申请日：2000-08-29
申请人： SEMITOOL, INC.
发明人： BERGMAN, Eric, J.
IPC分类号： F26B21/06 , F26B3/34 , F26B3/00 , F26B7/00
CPC分类号： H01L21/67034 , Y10S134/902
摘要： A process and apparatus for drying semiconductor wafers (40), includes the controlled-rate extraction of a wafer immersed in rinsing liquid (38), irradiation of the wafer using high intensity lights (50) or filaments along the wafer-liquid interface (39), and delivery of gas streams against the wafer along the wafer-liquid interface using a gas delivery system (52, 54, 56). Heating is controlled to create a temperature gradient without evaporating rinsing fluid adhering to surfaces of the wafer. Heating by the radiation sources (80, 81) creates a temperature gradient in the wafer in the irradiated region that simultaneously generates a surface tension gradient in the water adhering to the wafer surface. The gas delivery system (88, 89) removes the bulk of the water adhering to the wafer surface, and also suppresses the height of the rinsing liquid adhering to the wafer, providing faster extraction of dry and highly clean wafers from the rinsing liquid. A solvent vapor is optionally injected at the wafer-liquid interface, to reduce adhesion of the liquid to the vapor.
摘要翻译：用于干燥半导体晶片（40）的方法和设备包括浸入冲洗液体（38）中的晶片的受控速率提取，使用高强度光（50）或沿着晶片 - 液体界面（39））以及使用气体输送系统（52,54,56）沿着晶片 - 液体界面输送气流抵靠晶片。控制加热以产生温度梯度而不蒸发漂洗流体粘附到晶片的表面。通过辐射源（80,81）的加热在照射区域中的晶片中产生温度梯度，其同时在附着于晶片表面的水中产生表面张力梯度。气体输送系统（88,89）除去附着在晶片表面上的大量水，并且还抑制附着在晶片上的冲洗液的高度，从冲洗液中更快速地提取干燥且高度清洁的晶片。溶剂蒸汽可选地在晶片 - 液体界面处注入，以减少液体与蒸气的粘附。

8. 发明授权

EP1549357B1 WORKPIECE PROCESSING SYSTEM 有权
标题翻译：工件加工系统
公开(公告)号：EP1549357B1
公开(公告)日：2008-04-30
申请号：EP03783419.9
申请日：2003-11-13
申请人： SEMITOOL, INC.
发明人： BREESE, Ronald, G. , SCRANTON, Dana, R. , BERGMAN, Eric, J. , BARTKOSKI, Michael, E. , GROVE, Coby, S.
IPC分类号： H01L21/00 , B01D53/66
CPC分类号： A61L2/202 , B01D53/86 , B01D2257/106 , B08B3/08 , B08B2203/005 , H01L21/67017 , H01L21/67023 , H01L21/67028 , H01L21/67034 , H01L21/6704 , H01L21/67051
摘要： A workpiece processing system for processing semiconductor wafers and other flat media includes a stand-alone processing unit having two or more modules vertically stacked on top of one another. A first module includes an ozone generator, a DI water supply, a purge gas/drying gas supply, and optionally includes an ammonium hydroxide generator. A second module is preferably stacked on top of the first module and includes a processing chamber in communication with the devices in the first module. The processing chamber preferably includes a rotor for holding and rotating workpieces, one or more spray manifolds, an ozone destructor, an anti-static generator, and/or any other suitable workpiece-processing devices. The rotor is preferably designed to hold two workpiece-carrying cassettes each capable of holding up to 25 workpieces. A third module is preferably stacked on top of the second module and includes the system electronics and controls.

9. 发明公开

EP1212151A1 PROCESS AND APPARATUS FOR TREATING A WORKPIECE SUCH AS A SEMICONDUCTOR WAFER 审中-公开
标题翻译：方法处理工件SUCH AS 一种半导体晶片
公开(公告)号：EP1212151A1
公开(公告)日：2002-06-12
申请号：EP00948892.5
申请日：2000-07-21
申请人： SEMITOOL, INC.
发明人： BERGMAN, Eric, J.
IPC分类号： B08B3/08 , B08B3/10 , B08B5/00 , B08B9/20 , B08B9/34 , C23G1/00 , C23G1/02
CPC分类号： G03F7/422 , B08B3/00 , B08B3/02 , B08B3/044 , B08B3/08 , B08B7/00 , B08B2203/005 , B08B2203/007 , B08B2230/01 , G03F7/427 , H01L21/02052 , H01L21/31111 , H01L21/31133 , H01L21/67051 , H01L21/6708
摘要： A novel chemistry, system and application technique reduces the contamination of semiconductor wafers and similar substrates. A stream of liquid chemical is applied to the workpiece surface (20). Ozone is delivered either into the liquid process stream (60) or into the process environment (15). The Ozone is preferably generated by a high capacity ozone generator (75). The chemical stream, which may be in the form of a liquid or vapor, is applied to the wafer (20) in a system which enables control of the boundary layer which forms on the workpiece surface. The chemical stream may include components such as ammonium hydroxide for simultaneous particle and organic removal, another chemical to raise the pH of the solution, or other chemical additives designed to accomplish one or more specific cleaning tasks. The particular application technique is configured to develop and control a boundary layer of the liquid on the wafer surface.

10. 发明公开

EP1100630A1 PROCESS AND APPARATUS FOR TREATING A WORKPIECE SUCH AS A SEMICONDUCTOR WAFER 有权
标题翻译：方法和装置处理工件如半导体晶片
公开(公告)号：EP1100630A1
公开(公告)日：2001-05-23
申请号：EP99918658.8
申请日：1999-04-16
申请人： SEMITOOL, INC.
发明人： BERGMAN, Eric, J. , MIGNON, P., Hess
IPC分类号： B08B3/12 , B08B6/00 , B08B3/00
CPC分类号： H01L21/02052 , B08B3/02 , B08B3/08 , B08B2203/005 , B08B2230/01 , H01L21/6704
摘要： A novel chemistry and application technique used in a chemical process sequence to address the contamination concerns of the microelectronic fabrication industry is set forth. These concerns are namely: minimizing contamination for organics, particles, metal/ions, and silicon dioxide. Generally stated, cleaning of workpieces (20), such as semiconductor wafers, is accomplished by delivery of a chemical stream to the workpiece surface (20). Ozone is delivered either into the liquid process stream (70) or into the process environment (15). The chemical stream, which may be in the form of a liquid or vapor, is applied to the wafer in a system which enables control of the boundary layer which forms on the workpiece surface (20). The chemical stream may include components such as ammonium hydroxide for simultaneous particle and organic removal, another chemical to raise the pH of the solution, or other chemical additives designed to accomplish one or more specific cleaning tasks.

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