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    • 6. 发明公开
    • Method of manufacturing photoelectric conversion device
    • 光电转换装置的制造方法
    • EP2065943A2
    • 2009-06-03
    • EP08020763.2
    • 2008-11-28
    • Semiconductor Energy Laboratory Co, Ltd.
    • Isaka, FumitoKato, ShoDairiki, Koji
    • H01L31/0236
    • H01L31/1804H01L31/02168H01L31/022433H01L31/03762H01L31/0725H01L31/1864H01L31/202Y02E10/547Y02E10/548Y02P70/521
    • A fragile layer is formed in a region at a depth of less than 1000 nm from one surface of a single crystal semiconductor substrate, and a first impurity semiconductor layer and a first electrode are formed at the one surface side. After bonding the first electrode and a supporting substrate, the single crystal semiconductor substrate is separated using the fragile layer or the vicinity as a separation plane, thereby forming a first single crystal semiconductor layer over the supporting substrate. An amorphous semiconductor layer is formed on the first single crystal semiconductor layer, and a second single crystal semiconductor layer is formed by heat treatment for solid phase growth of the amorphous semiconductor layer. A second impurity semiconductor layer having a conductivity type opposite to that of the first impurity semiconductor layer and a second electrode are formed over the second single crystal semiconductor layer.
    • 脆弱层形成在距单晶半导体衬底的一个表面小于1000nm的深度处的区域中,并且在该一个表面侧形成第一杂质半导体层和第一电极。 在接合第一电极和支撑衬底之后,使用脆弱层或其附近作为分离面来分离单晶半导体衬底,由此在支撑衬底上形成第一单晶半导体层。 在第一单晶半导体层上形成非晶半导体层,通过对非晶半导体层进行固相生长的热处理形成第二单晶半导体层。 在第二单晶半导体层上形成导电类型与第一杂质半导体层和第二电极相反的第二杂质半导体层。