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1. 发明公开

EP0320889A3 Image sensor immune to noise signals originating from an alternating power supply 失效
标题翻译：图像传感器免受来自替代电源的噪声信号的影响
公开(公告)号：EP0320889A3
公开(公告)日：1990-11-07
申请号：EP88120836.7
申请日：1988-12-13
申请人： SEL SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Amachi, Nobumitsu , Hamatani, Toshiji , Fukada, Takeshi , Sakama, Mitsunori , Sakamoto, Naoya , Kodama, Mitsufumi
IPC分类号： H04N1/40
CPC分类号： H04N1/40056
摘要： An image sensor is described. The sensor comprises a sensor array and an alternating electric power supply. The frequency of the power supply is selected to be equal to or a multiple of the frequency at which the sensor array is scanned.

2. 发明授权

EP0403936B1 Method for producing a conductive oxide pattern 失效
标题翻译：一种用于制造结构的方法，由导电性氧化物的
公开(公告)号：EP0403936B1
公开(公告)日：1996-04-17
申请号：EP90111107.0
申请日：1990-06-12
申请人： SEL SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Fukui, Takashi , Sakamoto, Naoya , Fukada, Takeshi
IPC分类号： H01L31/18 , H01L21/321 , C23C14/08 , C23C14/58
CPC分类号： G02F1/13439 , H01L31/1055 , H01L31/1884 , Y02E10/50

3. 发明公开

EP0320889A2 Image sensor immune to noise signals originating from an alternating power supply 失效
标题翻译： Bildsensor，unempfänglichfürRauschsignale，verursacht durch eine Wechselstromversorgung。
公开(公告)号：EP0320889A2
公开(公告)日：1989-06-21
申请号：EP88120836.7
申请日：1988-12-13
申请人： SEL SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Amachi, Nobumitsu , Hamatani, Toshiji , Fukada, Takeshi , Sakama, Mitsunori , Sakamoto, Naoya , Kodama, Mitsufumi
IPC分类号： H04N1/40
CPC分类号： H04N1/40056
摘要： An image sensor is described. The sensor comprises a sensor array and an alternating electric power supply. The frequency of the power supply is selected to be equal to or a multiple of the frequency at which the sensor array is scanned.
摘要翻译：描述图像传感器。传感器包括传感器阵列和交流电源。选择电源的频率等于或扫描传感器阵列的频率的倍数。

4. 发明公开

EP0485233A3 A method of manufacturing insulated-gate field effect transistors 失效
标题翻译：一种制造绝缘栅场效应晶体管的方法
公开(公告)号：EP0485233A3
公开(公告)日：1994-09-21
申请号：EP91310362.8
申请日：1991-11-08
申请人： SEL SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Yamazaki, Shunpei , Zhang, Hongyong , Inushima, Takashi , Fukada, Takeshi
IPC分类号： H01L21/336 , H01L21/203
CPC分类号： H01L29/66757 , C23C14/568 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02631 , H01L21/02661 , Y10S438/906 , Y10S438/907 , Y10S438/908
摘要： A method of manufacturing thin film field effect transistors is described. The channel region of the transistors is formed by depositing an amorphous semiconductor film in a first sputtering apparatus followed by thermal treatment for converting the amorphous phase to a polycrystalline phase. The gate insulating film is formed by depositing an oxide film in a second sputtering apparatus connected to the first apparatus through a gate valve. The sputtering for the deposition of the amorphous semiconductor film is carried out in an atmosphere comprising hydrogen in order to introduce hydrogen into the amorphous semiconductor film. The gate insulating oxide film is deposited by sputtering in an atmosphere comprising oxygen.
摘要翻译：描述制造薄膜场效应晶体管的方法。通过在第一溅射装置中沉积非晶半导体膜，然后进行热处理以将非晶相转变为多晶相，形成晶体管的沟道区。栅极绝缘膜通过在通过闸阀连接到第一装置的第二溅射装置中沉积氧化膜而形成。用于沉积非晶半导体膜的溅射在包括氢的气氛中进行，以便将氢引入到非晶半导体膜中。栅极绝缘氧化物膜通过溅射在包含氧的气氛中沉积。

5. 发明公开

EP0403936A3 Method for producing a conductive oxide pattern 失效
标题翻译：生产导电氧化物图案的方法
公开(公告)号：EP0403936A3
公开(公告)日：1991-03-06
申请号：EP90111107.0
申请日：1990-06-12
申请人： SEL SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Fukui, Takashi , Sakamoto, Naoya , Fukada, Takeshi
IPC分类号： H01L31/18 , H01L21/321 , C23C14/08 , C23C14/58
CPC分类号： G02F1/13439 , H01L31/1055 , H01L31/1884 , Y02E10/50
摘要： A conductive oxide film (2) is formed on a substrate (1) at a low temperature. The formed conductive oxide film (2) is not very dense because of the low temperature. Therefore the formed conductive oxide film (2) can easily be etched by an etchant having a weak etching capability. And by the etching a pattern of the formed conductive oxide film (2) is produced. The patterned conductive oxide film is oxidized at a temperature in the range of 100-400°C. In this way a conductive oxide pattern is produced in a shorter time in the method of the present invention than in a conventional method and the conductive oxide pattern produced by the method of the present invention has the almost same resistivity as the conductive oxide pattern produced by the conventional method and has an improved pattern edge and an improved reproducibility.

6. 发明公开

EP0403936A2 Method for producing a conductive oxide pattern 失效
标题翻译： Verfahren zur Herstellung einer Struktur ausleitfähigemOxyd。
公开(公告)号：EP0403936A2
公开(公告)日：1990-12-27
申请号：EP90111107.0
申请日：1990-06-12
申请人： SEL SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Fukui, Takashi , Sakamoto, Naoya , Fukada, Takeshi
IPC分类号： H01L31/18 , H01L21/321 , C23C14/08 , C23C14/58
CPC分类号： G02F1/13439 , H01L31/1055 , H01L31/1884 , Y02E10/50
摘要： A conductive oxide film (2) is formed on a substrate (1) at a low temperature. The formed conductive oxide film (2) is not very dense because of the low temperature. Therefore the formed conductive oxide film (2) can easily be etched by an etchant having a weak etching capability. And by the etching a pattern of the formed conductive oxide film (2) is produced. The patterned conductive oxide film is oxidized at a temperature in the range of 100-400°C. In this way a conductive oxide pattern is produced in a shorter time in the method of the present invention than in a conventional method and the conductive oxide pattern produced by the method of the present invention has the almost same resistivity as the conductive oxide pattern produced by the conventional method and has an improved pattern edge and an improved reproducibility.
摘要翻译：在低温下在基板（1）上形成导电氧化膜（2）。形成的导电氧化物膜（2）由于温度低而不是非常致密的。因此，可以通过蚀刻能力弱的蚀刻剂容易地蚀刻形成的导电氧化物膜（2）。并且通过蚀刻制造所形成的导电氧化物膜（2）的图案。图案化的导电氧化物膜在100-400℃的温度下被氧化。以这种方式，在本发明的方法中，与传统方法相比，在较短的时间内产生导电氧化物图案，并且导电氧化物图案通过本发明的方法制造的电阻率与通过常规方法制造的导电氧化物图案具有几乎相同的电阻率，并具有改进的图案边缘和改进的再现性。

7. 发明公开

EP0211634A3 Method and apparatus for manufacturing semiconductor devices 失效
标题翻译：制造半导体器件的方法和装置
公开(公告)号：EP0211634A3
公开(公告)日：1988-05-04
申请号：EP86305952
申请日：1986-08-01
申请人： SEL SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Yamazaki, Shunpei , Suzuki, Kunio , Nagayama, Susumu , Inujima, Takashi , Abe, Masayoshi , Fukada, Takeshi , Kinka, Mikio , Kobayashi, Ippei , Shibata, Katsuhiko , Susukida, Masato , Koyanagi, Kaoru
IPC分类号： H01L31/18 , H01L21/324
CPC分类号： H01L31/208 , H01L21/3003 , Y02E10/50 , Y02P70/521 , Y10S148/004 , Y10S148/024
摘要： An improved semiconductor fabrication process is disclosed in accordance with which a semiconductor layer just formed by a plasma CVD method for example is subjected to light irradiation under conditions such as to encourage the development of dangling bonds in the surface microstructure of the semiconductor, and the dangling bonds thus formed are then neutralized by the formation of stable combinations between the dangling bonds and a neutralizing agent. The resulting semiconductor does not demonstrate the disadvantageous Staebler-Wronski effect and is advantageous in the fabrication of semiconductor photoelectric conversion devices.

8. 发明授权

EP0320889B1 Image sensor immune to noise signals originating from an alternating power supply 失效
标题翻译：图像传感器，免疫引起的AC电源的噪声信号。
公开(公告)号：EP0320889B1
公开(公告)日：1994-06-08
申请号：EP88120836.7
申请日：1988-12-13
申请人： SEL SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Amachi, Nobumitsu , Hamatani, Toshiji , Fukada, Takeshi , Sakama, Mitsunori , Sakamoto, Naoya , Kodama, Mitsufumi
IPC分类号： H04N1/40
CPC分类号： H04N1/40056

9. 发明授权

EP0211634B1 Method and apparatus for manufacturing semiconductor devices 失效
标题翻译：用于制造半导体器件的方法和设备。
公开(公告)号：EP0211634B1
公开(公告)日：1994-03-23
申请号：EP86305952.3
申请日：1986-08-01
申请人： SEL SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Yamazaki, Shunpei , Suzuki, Kunio , Nagayama, Susumu , Inujima, Takashi , Abe, Masayoshi , Fukada, Takeshi , Kinka, Mikio , Kobayashi, Ippei , Shibata, Katsuhiko , Susukida, Masato , Koyanagi, Kaoru
IPC分类号： H01L31/18 , H01L21/324
CPC分类号： H01L31/208 , H01L21/3003 , Y02E10/50 , Y02P70/521 , Y10S148/004 , Y10S148/024

10. 发明公开

EP0485233A2 A method of manufacturing insulated-gate field effect transistors 失效
标题翻译： Verfahren zum Herstellen von Feldeffektransistoren mit isoliertem Gate。
公开(公告)号：EP0485233A2
公开(公告)日：1992-05-13
申请号：EP91310362.8
申请日：1991-11-08
申请人： SEL SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Yamazaki, Shunpei , Zhang, Hongyong , Inushima, Takashi , Fukada, Takeshi
IPC分类号： H01L21/336 , H01L21/203
CPC分类号： H01L29/66757 , C23C14/568 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02631 , H01L21/02661 , Y10S438/906 , Y10S438/907 , Y10S438/908
摘要： A method of manufacturing thin film field effect transistors is described. The channel region of the transistors is formed by depositing an amorphous semiconductor film in a first sputtering apparatus followed by thermal treatment for converting the amorphous phase to a polycrystalline phase. The gate insulating film is formed by depositing an oxide film in a second sputtering apparatus connected to the first apparatus through a gate valve. The sputtering for the deposition of the amorphous semiconductor film is carried out in an atmosphere comprising hydrogen in order to introduce hydrogen into the amorphous semiconductor film. The gate insulating oxide film is deposited by sputtering in an atmosphere comprising oxygen.
摘要翻译：描述制造薄膜场效应晶体管的方法。通过在第一溅射装置中沉积非晶半导体膜，然后进行热处理以将非晶相转变为多晶相，形成晶体管的沟道区。栅极绝缘膜通过在通过闸阀连接到第一装置的第二溅射装置中沉积氧化膜而形成。用于沉积非晶半导体膜的溅射在包括氢的气氛中进行，以便将氢引入到非晶半导体膜中。栅极绝缘氧化物膜通过溅射在包含氧的气氛中沉积。

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