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    • 2. 发明公开
    • Positive acting photoresist and method of producing same
    • 阳光明媚的Photolack und Verfahren zu dessen Herstellung。
    • EP0425142A2
    • 1991-05-02
    • EP90311172.2
    • 1990-10-11
    • ROHM AND HAAS COMPANY
    • Winkle, Mark Robert
    • G03F7/004
    • G03F7/0045
    • A positive-acting photoresist composition which produces crosslinked images and processes for using the photoresist composition are disclosed. The photoresist composition is prepared from a mixture containing a film-­forming, polymer-containing, acid-hardening resin system, an acid or acid-­generating material for crosslinking the acid-hardening resin system, and a photobase generating compound. The photoresist composition is applied to a substrate surface and selectively imagewise exposed through a photomask to actinic radiation. The actinic radiation causes the photobase generator to produce a base in the imagewise exposed portions of the photoresist film. The photochemically generated base neutralises the acid in the imagewise exposed areas of the photoresist film. The non-imagewise exposed portions of the photoresist film, not containing the photochemically generated base, are crosslinked by the catalytic action of the acid upon heating the film, and the imagewise exposed portions of the photoresist film are removed from the substrate by the action of a developer solution leaving a crosslinked positive image on the substrate.
    • 公开了产生交联图像的正性光致抗蚀剂组合物和使用光致抗蚀剂组合物的方法。 光致抗蚀剂组合物由含有成膜剂,含聚合物的酸固化树脂体系,用于交联酸硬化树脂体系的酸或酸产生材料和产生光致碱的化合物的混合物制备。 将光致抗蚀剂组合物施加到基材表面,并通过光掩模选择性地成像曝光至光化辐射。 光化辐射导致光致产生器在光致抗蚀剂膜的成像曝光部分中产生基底。 光化学产生的碱中和光致抗蚀剂膜的成像曝光区域中的酸。 光致抗蚀剂膜的非成像曝光部分,不含光化学产生的基底,通过在加热膜时酸的催化作用而交联,并且光致抗蚀剂膜的成像曝光部分通过 显影剂溶液在基底上留下交联的正像。
    • 6. 发明公开
    • Positive acting photoresist and method of producing same
    • 积极作用光电子及其生产方法
    • EP0425142A3
    • 1991-10-16
    • EP90311172.2
    • 1990-10-11
    • ROHM AND HAAS COMPANY
    • Winkle, Mark Robert
    • G03F7/004
    • G03F7/0045
    • A positive-acting photoresist composition which produces crosslinked images and processes for using the photoresist composition are disclosed. The photoresist composition is prepared from a mixture containing a film-­forming, polymer-containing, acid-hardening resin system, an acid or acid-­generating material for crosslinking the acid-hardening resin system, and a photobase generating compound. The photoresist composition is applied to a substrate surface and selectively imagewise exposed through a photomask to actinic radiation. The actinic radiation causes the photobase generator to produce a base in the imagewise exposed portions of the photoresist film. The photochemically generated base neutralises the acid in the imagewise exposed areas of the photoresist film. The non-imagewise exposed portions of the photoresist film, not containing the photochemically generated base, are crosslinked by the catalytic action of the acid upon heating the film, and the imagewise exposed portions of the photoresist film are removed from the substrate by the action of a developer solution leaving a crosslinked positive image on the substrate.