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    • 6. 发明公开
    • HALBLEITERANORDNUNG
    • EP0654177A1
    • 1995-05-24
    • EP93915666.0
    • 1993-07-27
    • ROBERT BOSCH GMBH
    • CONZELMANN, GerhardDENNER, VolkmarKIENZLER, RainerSCHMAUDER, WolfgangSCHUETTE, Klaus
    • H01L23
    • H01L23/5283H01L2924/0002H01L2924/00
    • The proposal is for a semiconductor arrangement which comprises a semiconductor body (10), a plurality of dielectric layers (11, 12) partly covering at least one of its surfaces, at least one layer (13) of applied polycrystalline semiconductor material and at least one metallised layer (14), which is applied to the semiconductor body (10) provided with the dielectric layers (11, 12) in such a way that it lies directly on the surface regions of the semiconductor body (10) not covered by the dielectric layers or lies on the surface regions of the semiconductor body (10) on at least one of the dielectric layers (11, 12) which act as conductive path regions. Within said conductive path regions, several parts of at least one conductive path (14) are raised at repeated distances by underlying webs from the layer (13) of applied polycrystalline semiconductor material or recessed by recesses in the oxide, so that the metallised layer (14) is corrugated inside said conductive path regions.
    • 该建议是针对一种半导体装置,该半导体装置包括半导体本体(10),部分覆盖其至少一个表面的多个介电层(11,12),至少一个施加的多晶半导体材料的层(13)以及至少一个 一个金属化层(14),该金属化层以如下方式施加到设置有电介质层(11,12)的半导体本体(10)上,使得其直接位于半导体本体(10)的未被 介电层或位于作为导电路径区的至少一个介电层(11,12)上的半导体本体(10)的表面区域上。 在所述导电路径区域内,至少一个导电路径(14)的若干部分通过下层网状物从所施加的多晶半导体材料的层(13)以重复的距离升高或由氧化物中的凹槽凹入,从而金属化层 14)在所述导电路径区域内波纹状。