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1. 发明公开

EP2587234A1 INFRARED SENSOR 审中-公开
标题翻译：红外传感器
公开(公告)号：EP2587234A1
公开(公告)日：2013-05-01
申请号：EP11798227.2
申请日：2011-06-23
申请人： Panasonic Corporation
发明人： KIRIHARA, Masao , YAMANAKA, Hiroshi , SANAGAWA, Yoshiharu , AKETA, Takanori , NAKAMURA, Yushi , UEDA, Mitsuhiko
IPC分类号： G01J1/02 , H01L35/30
CPC分类号： H01L31/024 , G01J5/04 , G01J5/045 , G01J5/06 , G01J5/08 , G01J5/0806 , G01J5/0831 , G01J5/12 , H01L2924/0002 , H01L2924/00
摘要： Provided is an infrared sensor capable of suppressing variation in an S/N ratio in a plane of an infrared sensor chip resulting from heating of an IC chip. The infrared sensor includes: an infrared sensor chip (100) in which a plurality of pixel portions (2) each including a temperature-sensitive portion (30) formed of a thermopile (30a) is disposed in an array on one surface side of a semiconductor substrate (1); and an IC chip (102) that processes an output signal of the infrared sensor chip (100). A package (103) includes a package main body (104) on which the infrared sensor chip (100) and the IC chip (102) are mounted to be arranged side-by-side, and a package cover (105) that has a lens (153) transmitting infrared rays and is hermetically bonded to the package main body (104). The package (103) is provided therein with a cover member (106) that includes a window hole (108) through which infrared rays pass into the infrared sensor chip (100) and equalizes amounts of temperature change of hot junctions T1 and cold junctions T2 among the pixel portions (2), the temperature change resulting from heating of the IC chip (102).
摘要翻译：本发明提供一种红外线传感器，其能够抑制因IC芯片发热而产生的红外线传感器芯片的面内的S / N比的偏差。红外线传感器包括红外线传感器芯片（100），在该红外线传感器芯片（100）中，将包括由热电堆（30a）形成的温度敏感部分（30）的多个像素部分（2）以阵列布置在半导体衬底（1）; 和处理红外传感器芯片（100）的输出信号的IC芯片（102）。本发明提供一种封装（103），该封装（103）具备：并排配置红外线传感器芯片（100）和IC芯片（102）的封装主体（104）;以及封装盖透镜（153）透射红外线并且密封地结合到封装主体（104）。封装103在其中设置有包括窗口孔108的盖构件106，红外线通过该窗口进入红外传感器芯片100并且使热结点T1和冷结点T2的温度变化量相等在像素部分（2）中产生由IC芯片（102）的加热引起的温度变化。

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