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    • 3. 发明公开
    • Television receiving apparatus
    • Fernsehempfangsgerät。
    • EP0342728A1
    • 1989-11-23
    • EP89201030.7
    • 1989-04-21
    • PHILIPS ELECTRONICS UK LIMITEDPhilips Electronics N.V.
    • Bird, Philip Harvey
    • H04N5/50
    • H03J7/047H04N5/50
    • A television receiver has an a.f.c. arrangement for ensuring the correct tuning of a tuner unit (4) which is tuned to the nominal carrier frequency by a tuning voltage (VT). When the tuner unit (4) is incorrectly tuned to the actual carrier frequency the a.f.c. system operates in a first mode in which a sweep current produced by a current source (15) is applied by way of a closed switch (16) to an a.f.c. capacitor (17) to produce a swept a.f.c. voltage for the tuner unit (4). The sweep direction is controlled by an RS flip-flop (13) by way of a multiplexer (12) in response to voltage comparators (19, 20) connected to the a.f.c. capacitor (17). When the tuning is sufficiently close such that the received transmission can be correctly decoded the a.f.c. arrangement goes into a second mode in which the output of a frequency demodulator (6) is applied via multiplexer (12) to control the current source (15) and hence the voltage across a.f.c. capacitors (17). For this second mode gate pulses (G1, G2) from a data processor (11) control the multiplexer (12) paths via a monostable (14) and only cause switch (16) to be conductive during a given portion of each line period.
    • 电视接收机具有a.f.c. 用于确保通过调谐电压(VT)调谐到标称载波频率的调谐器单元(4)的正确调谐的布置。 当调谐器单元(4)未正确调谐到实际载波频率时,a.f.c. 系统以第一模式工作,其中由电流源(15)产生的扫描电流通过闭合开关(16)施加到a.f.c. 电容器(17),产生扫频 调谐器单元(4)的电压。 响应于与a.f.c.连接的电压比较器(19,20),扫描方向由RS触发器(13)通过多路复用器(12)控制。 电容器(17)。 当调谐足够接近时,使得接收到的传输可以被正确解码。 布置进入第二模式,其中通过多路复用器(12)施加频率解调器(6)的输出以控制电流源(15),从而控制跨频率的电压。 电容器(17)。 对于该第二模式,来自数据处理器(11)的门脉冲(G1,G2)经由单稳态(14)控制多路复用器(12)路径,并且仅在每个行周期的给定部分期间使开关(16)导通。
    • 4. 发明公开
    • Motor speed control system
    • Motorgeschwindigkeitsregelsystem。
    • EP0247650A2
    • 1987-12-02
    • EP87200769.5
    • 1987-04-23
    • PHILIPS ELECTRONICS UK LIMITEDPhilips Electronics N.V.
    • Armstrong, Desmond RossBird, Philip Harvey
    • H02P5/418G05D13/62
    • H02P25/145H02P23/0077Y10S388/912
    • A speed control system for an a.c. electric motor (1) comprises a microcomputer (6) to an interrupt signal input ( INT /TO) of which are coupled the outputs of a detector (10) for zero-crossings in the a.c. supply and a tachogenerator (11) connected to 'the motor. The microcomputer supplies firing pulses to a triac (2), included in series with the motor, in response to an overflow of a clocked counter (CT), this counter being suitably preloaded at each zero-crossing. The counter is read each time a tachogenerator pulse occurs and the time which this reading indicates has elapsed since the immediately preceding zero-crossing is stored. A record is also kept in a register (ZCSLTA) of how many zero-crossings occur between each tachogenerator pulse and the next and from this and the stored times relating to the relevant pulses the period of the tachogenerator pulses and hence the actual speed of the motor is calculated. The preloading value for the counter is calculated from this and the required speed.
    • 用于交流电的速度控制系统 电动机(1)包括微型计算机(6),其中的一个中断信号输入端(@@@ TO)被耦合到一个检测器(10)的输出端,用于在交流电中进行零交叉。 供应和连接到电机的测速发电机(11)。 微计算机响应时钟计数器(CT)的溢出,向与电动机串联的三端双向可控硅开关元件(2)提供触发脉冲,该计数器在每个过零点处被适当预加载。 每当发生测速发电机脉冲并且从紧接在前的过零点开始经过该读取指示的时间之后,读取计数器。 记录也保存在登记册(ZCSLTA)中,每个测速发电机脉冲和下一个测速发生器脉冲之间发生多少过零点,并且从这一点和与相关脉冲相关的存储时间,测速发电机脉冲的周期,因此实际速度 电机计算。 计数器的预加载值由此和所需速度计算。
    • 6. 发明公开
    • A method of manufacturing a semiconductor device
    • Verfahren zum Herstellen einer Halbleiteranordnung。
    • EP0294888A2
    • 1988-12-14
    • EP88201143.0
    • 1988-06-06
    • PHILIPS ELECTRONICS UK LIMITEDPhilips Electronics N.V.
    • Fisher, Carole AnnePaxman, David HenryBird, Philip Harvey
    • H01L21/82H01L27/08
    • H01L29/7816H01L21/8234H01L21/8236H01L27/0727H01L27/0883H01L29/0615H01L29/41766H01L29/42368H01L29/7801H01L29/7802
    • A method of manufacturing a semiconductor device including both an enhancement (1) insulated gate field effect transistor (IGFET) and a depletion (2) mode IGFET is described. Impurities are introduced into a first region or epitaxial layer (4) of one conductivity type adjacent a given surface (3a) of a semiconductor body (3) to provide, for both the enhancement mode (1) and for the depletion mode (2) IGFET, a second region (5) of the opposite conductivity type adjacent the given surface, a source region (9) of the one conductivity type adjacent the given surface (3a) and surrounded by the second region (5) and a drain region (10) of the one conductivity type having a relatively lowly doped drain extension region (11)adjacent the given surface and extending towards the source region (9). First and second insulated gates (12) are provided on first and second areas (31a) and (31b), respectively of the given surface to provide a respective gateable connection between each source region (a) and the associated drain region (10). The relative doses of impurities introduced to provide the second regions (5) and the relatively lowly doped drain extensions (1) received by the first area (31a) and the second area (31b) are independently controlled so as to provide adjacent the first area (31a) a channel area (13) of the opposite conductivity type and adjacent the second area (31b) a channel area (13′)of the one conductivity type.
    • 描述了包括增强(1)绝缘栅场效应晶体管(IGFET)和耗尽(2)模式IGFET两者的半导体器件的制造方法。 杂质被引入与半导体本体(3)的给定表面(3a)相邻的一种导电类型的第一区域或外延层(4),以便为增强模式(1)和耗尽模式(2)两者提供, IGFET是与给定表面相邻的相反导电类型的第二区域(5),邻近给定表面(3a)并被第二区域(5)包围的一个导电类型的源极区域(9)和漏极区域 10),其具有相邻于给定表面并朝向源极区域(9)延伸的相对低掺杂的漏极延伸区域(11)。 第一和第二绝缘栅极(12)分别设置在给定表面的第一和第二区域(31a)和(31b)上,以在每个源极区域(a)和相关联的漏极区域(10)之间提供相应的可选择连接。 为了提供由第一区域(31a)和第二区域(31b)接收的第二区域(5)和相对低掺杂的漏极延伸部(1)引入的杂质的相对剂量被独立地控制,以便邻近第一区域 (31a)具有相反导电类型的沟道区域(13)并且邻近所述第二区域(31b)所述一种导电类型的沟道区域(13分钟)。
    • 7. 发明公开
    • Driving a semiconductor device
    • Ansteuerung einer Halbleitervorrichtung。
    • EP0294887A2
    • 1988-12-14
    • EP88201142.2
    • 1988-06-06
    • PHILIPS ELECTRONICS UK LIMITEDPhilips Electronics N.V.
    • Bird, Philip Harvey
    • H03K17/08H03K17/04
    • H03K17/0822H03K17/04123H03K2217/0036
    • An arrangement for driving a semiconductor device ( 1 ) has an input (12) for receiving a control signal and a control output (11) for connection to the control electrode (9) of a power semiconductor device ( 1 ) which is connected in series with a load (5) across a power supply (3,6). The arrangement includes an active turn-off device (T67) to achieve fast turn-off of the device ( 1 ). The arrangement further includes a threshold detecting means ( 29 ) which operates to turn on the semiconductor device ( 1 ) in the event of a high voltage transient on the power supply. This reduces the voltage across the semiconductor device and hence reduces power dissipation within the semiconductor during transients. The turn-off device (T67) could be damaged by high transient currents when the threshold detecting means ( 29 ) conducts, so a further threshold detecting means ( 30 ) acts to disable the turn-off means (T67) during transients. The arrangement may be integrated monolithically with an associated semiconductor output device. An intelligent power switch circuit including such an arrangement is suitable for use in a motor vehicle.
    • 用于驱动半导体器件(1)的布置具有用于接收控制信号的输入端(12)和用于连接到串联连接的功率半导体器件(1)的控制电极(9)的控制输出端(11) 在电源(3,6)之间具有负载(5)。 该装置包括主动关闭装置(T67),以实现装置(1)的快速关闭。 该装置还包括阈值检测装置(29),其在电源上的高电压瞬变的情况下操作以接通半导体器件(1)。 这降低了跨越半导体器件的电压,并因此在瞬变期间降低半导体内的功率耗散。 当阈值检测装置(29)导通时,关断装置(T67)可能被高瞬变电流损坏,因此另外的阈值检测装置(30)用于在瞬变期间禁用关断装置(T67)。 该装置可以与相关联的半导体输出装置单片集成。 包括这种布置的智能电力开关电路适用于机动车辆。
    • 8. 发明公开
    • Differential amplifier and current sensing circuit including such an amplifier
    • Differentialzverstärkerund Strommessschaltung mit einem solchenVerstärker。
    • EP0294880A2
    • 1988-12-14
    • EP88201132.3
    • 1988-06-06
    • PHILIPS ELECTRONICS UK LIMITEDPhilips Electronics N.V.
    • Bird, Philip HarveyArmstrong, Desmond Ross
    • H03F3/45G01R17/06
    • H03F3/45076
    • A differential amplifier comprises first and second matched field-effect transistors (FETs) (21,22) having their source electrodes connected together and to a current source ( 2 ), and their drain electrodes connected respectively to an input and an output of a current mirror circuit ( 3 ). The FETs (21,22) are depletion-mode FETs, and the current source comprises parallel-connected third and fourth depletion-mode FETs (25,26) matched to the first and second FETs (21,22). The current source ( 2 ) and current mirror ( 3 ) act to constrain the first and second FETs (21,22), to operate over a predetermined operating curve, for which they are optimally matched to one another. The differential amplifier may be constructed as an integrated circuit, and may form part of a circuit for sensing current in a power semiconductor device.
    • 差分放大器包括其源电极连接在一起的第一和第二匹配场效应晶体管(FET)(21,22)和电流源(2),并且它们的漏电极分别连接到电流的输入和输出 镜像电路(3)。 FET(21,22)是耗尽型FET,并且电流源包括与第一和第二FET(21,22)匹配的并联连接的第三和第四耗尽型FET(25,26)。 电流源(2)和电流镜(3)用于约束第一和第二FET(21,22),以在预定的操作曲线上操作,它们彼此最佳地匹配。 差分放大器可以被构造为集成电路,并且可以形成用于感测功率半导体器件中的电流的电路的一部分。