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    • 2. 发明公开
    • HALBLEITERLICHTQUELLE MIT EINER PRIMÄRSTRAHLUNGSQUELLE UND EINEM LUMINESZENZKONVERSIONSELEMENT
    • HALBLEITERLICHTQUELLE MIT EINERPRIMÄRSTRAHLUNGSQUELLEUND EINEM LUMINESZENZKONVERSIONSELEMENT
    • EP2198465A1
    • 2010-06-23
    • EP08801322.2
    • 2008-09-11
    • OSRAM Opto Semiconductors GmbH
    • OTT, HubertLELL, AlfredTAUTZ, SönkeSTRAUSS, UweBAUMANN, FrankPETERSEN, Kirstin
    • H01L33/00F21K7/00
    • F21K9/64F21V9/30F21Y2115/10H01L33/507H01L33/58H01L33/60
    • The invention relates to a semiconductor light source having a primary radiation source (1) that, in operation, emits electromagnetic primary radiation (5) in a first wavelength range and having a luminescence conversion module (2) into which primary radiation (5) emitted by the primary radiation source (1) is coupled. The luminescence conversion module (2) comprises a luminescence conversion element (6) that absorbs primary radiation (5) from the first wavelength range by means of a luminescent material and emits electromagnetic secondary radiation (15) in a second wavelength range. The luminescence conversion element (6) is disposed at a distance from the primary radiation source (1) on a cooling body (3). Said luminescence conversion element (6) comprises a reflector surface (7, 71, 72) that reflects back primary radiation (5) traveling into the luminescence conversion element (6) but not absorbed thereby and/or reflects secondary radiation (15) in the direction of a light decoupling surface (601) of the luminescence conversion element (6).
    • 提供一种半导体光源,所述半导体光源具有主辐射源(1),当所述半导体光源被操作时,所述主辐射源(1)在第一波长范围内发射电磁初级辐射(5),并且具有发光转换模块 ),其中馈送由主辐射源(1)发射的初级辐射(5)。 发光转换模块(2)包含发光转换元件(6),其通过发光材料从第一波长范围吸收主辐射(5)并在第二波长范围内发射电磁次级辐射(15)。 发光转换元件(6)布置在距离主辐射源(1)一定距离处的散热器(3)上。 它具有反射回到发光转换元件(6)的主要辐射(5)的反射器表面(7,71,72),其通过发光转换元件(6)并且不被其吸收和/或反射次级辐射 15)在发光转换元件(6)的光耦合表面(601)的方向上。