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1. 发明授权

EP2660882B1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
公开(公告)号：EP2660882B1
公开(公告)日：2018-10-03
申请号：EP11853947.7
申请日：2011-12-27
申请人： Nichia Corporation
发明人： UBAHARA, Nobuhiro , DEGUCHI, Kouichiroh , YAMADA, Takao
IPC分类号： H01L33/50 , H01L27/15 , H01L33/40
CPC分类号： H01L27/156 , H01L33/405 , H01L33/50 , H01L33/505 , H01L33/508 , H01L2224/48091 , H01L2224/48465 , H01L2224/73265 , H01L2933/0016 , H01L2933/0041 , H01L2924/00014 , H01L2924/00
摘要： To provide a semiconductor light emitting device using a large-sized laminated semiconductor light emitting element with improved light extraction efficiency. The semiconductor light emitting device 90 of the present invention includes a semiconductor light emitting element 1 having a semiconductor laminate 40 including a p-type semiconductor layer 43, an active layer 42 and an n-type semiconductor layer 41 sequentially laminated, and a conductive support substrate 10 joined to the p-type semiconductor layer 43 side of the semiconductor laminate 40; a transparent sealing resin 92 covering the semiconductor laminate 40; and fluorescent particles 93 contained in the transparent sealing resin 92. The semiconductor laminate 40 is divided into at least two semiconductor regions 45a to 45d by trenches 2 penetrating the p-type semiconductor layer 43, the active layer 42, and the n-type semiconductor layer 41. The width W of the trench 2 is smaller than the average particle diameter of the fluorescent particle 93.

2. 发明公开

EP2660882A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：EP2660882A1
公开(公告)日：2013-11-06
申请号：EP11853947.7
申请日：2011-12-27
申请人： Nichia Corporation
发明人： UBAHARA, Nobuhiro , DEGUCHI, Kouichiroh , YAMADA, Takao
IPC分类号： H01L33/08 , H01L33/50
CPC分类号： H01L27/156 , H01L33/405 , H01L33/50 , H01L33/505 , H01L33/508 , H01L2224/48091 , H01L2224/48465 , H01L2224/73265 , H01L2933/0016 , H01L2933/0041 , H01L2924/00014 , H01L2924/00
摘要： To provide a semiconductor light emitting device using a large-sized laminated semiconductor light emitting element with improved light extraction efficiency. The semiconductor light emitting device 90 of the present invention includes a semiconductor light emitting element 1 having a semiconductor laminate 40 including a p-type semiconductor layer 43, an active layer 42 and an n-type semiconductor layer 41 sequentially laminated, and a conductive support substrate 10 joined to the p-type semiconductor layer 43 side of the semiconductor laminate 40; a transparent sealing resin 92 covering the semiconductor laminate 40; and fluorescent particles 93 contained in the transparent sealing resin 92. The semiconductor laminate 40 is divided into at least two semiconductor regions 45a to 45d by trenches 2 penetrating the p-type semiconductor layer 43, the active layer 42, and the n-type semiconductor layer 41. The width W of the trench 2 is smaller than the average particle diameter of the fluorescent particle 93.
摘要翻译：本发明提供一种使用提高了光取出效率的大型层叠型半导体发光元件的半导体发光装置。本发明的半导体发光器件90包括半导体发光元件1，半导体发光元件1具有半导体层压体40和导电支撑体，半导体层压体40包括依次层压的p型半导体层43，有源层42和n型半导体层41，基板10，与半导体层叠体40的p型半导体层43侧接合; 覆盖半导体层叠体40的透明密封树脂92，以及包含在透明密封树脂92中的荧光粒子93.通过贯穿p型半导体层43，活性层42和n型半导体的沟槽2将半导体层压体40分成至少两个半导体区域45a至45d 层41.沟槽2的宽度W小于荧光颗粒93的平均颗粒直径。

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