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    • 3. 发明公开
    • Superluminescent diode
    • Superlumineszierende二极管。
    • EP0318947A2
    • 1989-06-07
    • EP88119963.2
    • 1988-11-30
    • NIPPON TELEGRAPH AND TELEPHONE CORPORATION
    • Noguchi, YoshioNagai, HaruoTakada, KazumasaNoda, Juichi
    • H01L33/00H01S3/19
    • G01M11/3172H01L33/0045H01L33/0062H01S5/10
    • According to this invention, a superluminescent diode includes a current injection portion having a current injection electrode formed adjacent to a first end face, a light-absorption portion contiguous with the current injection portion; and a waveguide continuously formed to extend from the current injection portion to the light-absorption portion. The waveguide is constituted by an active layer and a member which completely buries the active layer, has a bandgap larger than that of the active layer, and is formed of a material having a small refractive index. The waveguide of the current injection portion is linearly formed to be perpendicular to the first end face. The waveguide of the light-absorption portion has an end portion for guiding reflected light in a direction different from a propagation direction of light propagating through the waveguide.
    • 根据本发明,超发光二极管包括具有邻近第一端面形成的电流注入电极的电流注入部分,与电流注入部分邻接的光吸收部分; 以及连续地形成为从电流注入部分延伸到光吸收部分的波导。 波导由有源层和完全埋入有源层的构件构成,具有比有源层大的带隙,并且由折射率小的材料形成。 电流注入部分的波导线形成为垂直于第一端面。 光吸收部分的波导具有用于沿与传播通过波导的光的传播方向不同的方向引导反射光的端部。