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    • 3. 发明公开
    • Resist material, method for the production of the same and process of forming resist patterns using the same
    • 抗蚀剂材料,其制备方法和用于制备抗蚀剂用这种材料的图像。
    • EP0466025A2
    • 1992-01-15
    • EP91111109.4
    • 1991-07-04
    • NIPPON TELEGRAPH AND TELEPHONE CORPORATION
    • Tanaka, AkinobuBan, HiroshiNakamura, JiroKimura, TakaoKawai, Yoshio
    • G03F7/075
    • G03F7/0757
    • A resist material comprises a polysiloxane obtained by hydrolysis and condensation with dehydration of one or more alkoxysilanes having an oxirane ring, or of a mixture of the alkoxysilane(s) having an oxirane ring and one or more alkoxysilanes having no oxirane ring, and an acid generator. The resist material may contain one or more of a spectral sensitizer, an organic polymer having a hydroxyl group or an epoxy compound. Resist patterns are formed by coating an organic polymer on a substrate (1) and then the resist material on the film of the organic polymer to form a two layer resist having a bottom layer (2) of the organic polymer and top layer (3) of the resist material, prebaking, imagewise exposing high radiation, postbaking, and developing the resist with alkaline solutions to remove an unexposed portion of the top layer, and dry etching the bottom layer using the relic of the resist material as a mask. The temperature of the post baking is preferably lower than that of the prebaking.
    • 的抗蚀材料包括通过水解和缩合与具有环氧乙烷环的一个或多个烷氧基硅烷的脱水而获得的聚硅氧烷,或环氧乙烷环和一种或多种烷氧基硅烷具有不具有环氧乙烷环的烷氧基硅烷(或多个)的混合物,并在酸 发电机。 抗蚀剂材料可以含有一种或多种光谱增感的,以具有羟基或环氧化合物的有机聚合物。 抗蚀剂图案通过有机聚合物的涂层形成在基片(1),然后在有机聚合物的膜中的抗蚀剂材料,以形成两层抗蚀具有底层(2)的有机聚合物和顶层(3)的 抗蚀剂材料,预烘烤,成像曝光高辐射,后烘焙,和发展与碱性溶液将抗蚀剂在顶部层的未曝光部分,以除去,和干蚀刻将抗蚀剂材料作为掩膜的遗迹底层,温度的 该后烘烤的,优选比预烘烤的下部。