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1. 发明授权

EP0524620B1 Field effect transistor and high frequency circuits using the same 失效
标题翻译：含有晶体管的场效应晶体管，该高频电路
公开(公告)号：EP0524620B1
公开(公告)日：2000-05-31
申请号：EP92112565.4
申请日：1992-07-22
申请人： NEC CORPORATION
发明人： Nagasako, Isamu, c/o NEC Corporation
IPC分类号： H01L29/423 , H01L23/64 , H03B5/18
CPC分类号： H01L29/42316 , H01L2224/48091 , H01L2224/73265 , H01L2924/12032 , H03B5/1852 , H03B7/14 , H03D9/0675 , H01L2924/00014 , H01L2924/00

2. 发明公开

EP0524620A2 Field effect transistor and high frequency circuits using the same 失效
标题翻译：晶体管enthaltende Hochfrequenzschaltungen。
公开(公告)号：EP0524620A2
公开(公告)日：1993-01-27
申请号：EP92112565.4
申请日：1992-07-22
申请人： NEC CORPORATION
发明人： Nagasako, Isamu, c/o NEC Corporation
IPC分类号： H01L29/60 , H03B5/18
CPC分类号： H01L29/42316 , H01L2224/48091 , H01L2224/73265 , H01L2924/12032 , H03B5/1852 , H03B7/14 , H03D9/0675 , H01L2924/00014 , H01L2924/00
摘要： A FET comprising two or more gate pads or terminals, and a reflexion type-oscillator including the above-mentioned FET. In this oscillator, a dielectric resonator is connected through a coupling line to the first gate pad of the FET and an output terminal is connected to the second pad. When the drain pad of FET is connected to ground, and a suitable value of capacitive reactance is added to the source pad, then a negative resistance -R appears on the first gate pad, and thus oscillation occurs at a resonance frequency fo of the dielectric resonator. If the load resistance value viewed from the second gate pad is set to R, the maximum oscillation output occurs. Accordingly this oscillator enables to set the oscillation conditions between the source and gate pads of the FET, and the output matching conditions between the second gate pad and the output terminal separately, and thus allows to set the oscillation conditions and the output matching conditions, respectively, simultaneously to the best.
摘要翻译：包括两个或更多个栅极焊盘或端子的FET以及包括上述FET的反射型振荡器。在该振荡器中，通过耦合线将介质谐振器连接到FET的第一栅极焊盘，并且输出端子连接到第二焊盘。当FET的漏极焊盘连接到地，并且将适当的电容电抗值添加到源极焊盘时，则在第一栅极焊盘上出现负电阻-R，因此在电介质的谐振频率fo处发生振荡谐振器。如果从第二栅极焊盘观察的负载电阻值设定为R，则发生最大振荡输出。因此，该振荡器能够设置FET的源极和栅极焊盘之间的振荡条件以及第二栅极焊盘和输出端子之间的输出匹配条件，并且因此允许分别设置振荡条件和输出匹配条件，同时最好。

3. 发明公开

EP0524620A3 Field effect transistor and high frequency circuits using the same 失效
标题翻译：场效应晶体管和使用该场效应晶体管的高频电路
公开(公告)号：EP0524620A3
公开(公告)日：1993-05-26
申请号：EP92112565.4
申请日：1992-07-22
申请人： NEC CORPORATION
发明人： Nagasako, Isamu, c/o NEC Corporation
IPC分类号： H01L29/60 , H03B5/18
CPC分类号： H01L29/42316 , H01L2224/48091 , H01L2224/73265 , H01L2924/12032 , H03B5/1852 , H03B7/14 , H03D9/0675 , H01L2924/00014 , H01L2924/00
摘要： A FET comprising two or more gate pads or terminals, and a reflexion type-oscillator including the above-mentioned FET. In this oscillator, a dielectric resonator is connected through a coupling line to the first gate pad of the FET and an output terminal is connected to the second pad. When the drain pad of FET is connected to ground, and a suitable value of capacitive reactance is added to the source pad, then a negative resistance -R appears on the first gate pad, and thus oscillation occurs at a resonance frequency fo of the dielectric resonator. If the load resistance value viewed from the second gate pad is set to R, the maximum oscillation output occurs. Accordingly this oscillator enables to set the oscillation conditions between the source and gate pads of the FET, and the output matching conditions between the second gate pad and the output terminal separately, and thus allows to set the oscillation conditions and the output matching conditions, respectively, simultaneously to the best.

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