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    • 1. 发明公开
    • CURRENT MEASUREMENT DEVICE
    • EP4414718A1
    • 2024-08-14
    • EP22877847.8
    • 2022-09-14
    • MultiDimension Technology Co., Ltd.
    • GUO, HaipingSONG, ChenCHEN, YeSHEN, WeifengXUE, Songsheng
    • G01R19/00G01R15/20
    • A current measurement device, comprising three or more different positions, wherein each position has at least two magnetoresistances. The two magnetoresistances are two magnetoresistances which respectively have a first sensing direction and an opposite second sensing direction. Within a set range, the resistance value of the magnetoresistance has a linear relationship with a magnetic field at the position where the magnetoresistance is located. The sensing directions of all magnetoresistances at different positions are the same or opposite. A magnetic field to be measured has a component in the sensing direction of the magnetoresistance. At least at one position the component in the sensing direction of said magnetic field is different from components in the sensing direction of said magnetic fields at other positions. All the magnetoresistances are electrically connected to form a resistance network in which an output signal includes the signals of said magnetic fields, and does not include or includes an interference magnetic field signal that is less than a first preset intensity. The current measurement device eliminates the interference of an interference magnetic field with current measurement.
    • 3. 发明公开
    • MAGNETIC ISOLATOR
    • EP3940397A1
    • 2022-01-19
    • EP20774231.3
    • 2020-03-12
    • Multidimension Technology Co., Ltd
    • GUO, HaipingSHEN, WeifengXUE, Songsheng
    • G01R15/20
    • The present disclosure discloses a magnetic isolator, including a substrate, a magnetic field generating unit, a magnetic field sensing unit, a shielding layer, and an isolation dielectric, where the magnetic field generating unit includes a current conductor, the current conductor is arranged to extend along a first direction on one side of the substrate, the magnetic field sensing unit and the current conductor are arranged on the same side of the substrate, the magnetic field sensing unit is located on a lateral side of the current conductor, and a distance between the current conductor and the magnetic field sensing unit is greater than 0 along a second direction, where the first direction is perpendicular to the second direction; an isolation dielectric is arranged between the current conductor and the magnetic field sensing unit; and an isolation dielectric is arranged within the distance between the current conductor and the magnetic field sensing unit along the second direction, thereby playing a role in electrical isolation, facilitating improving the isolation strength, and simplifying the process. The shielding layer can absorb external interfering magnetic fields, and further improve the signal-to-noise ratio.
    • 5. 发明公开
    • MAGNETIC SENSOR APPARATUS
    • EP4421511A1
    • 2024-08-28
    • EP22882505.5
    • 2022-09-14
    • MultiDimension Technology Co., Ltd.
    • GUO, HaipingSONG, ChenCHEN, YeSHEN, WeifengXUE, Songsheng
    • G01R33/09G01R33/02
    • Embodiments of the present invention disclose a magnetic apparatus. The apparatus comprises a magnetic field generation portion, a magnetic sensor portion and a signal processing portion. The magnetic sensor portion comprises a first magnetic sensor arranged at a first position, a second magnetic sensor arranged at a second position and a third magnetic sensor arranged at a third position. The first position, the second position and the third position are on the same horizontal line and are arranged at equal intervals. Magnetic fields generated by the magnetic field generation portion at the three different positions are different. The signal processing portion comprises a first differential circuit, a second differential circuit, and a third differential circuit. The first differential circuit generates a first difference between the first signal that is sensed and output by the first magnetic sensor and the second signal sensed and output by the second magnetic sensor. The second differential circuit generates a second difference between the second signal and the third signal sensed and output by the third magnetic sensor. The third differential circuit generates a differential measurement signal on the basis of the difference between the first difference and the second difference. The magnetic sensor apparatus can eliminate the impact of a magnetic interfering field to improve the current detection precision.
    • 7. 发明公开
    • MAGNETORESISTIVE INERTIAL SENSOR CHIP
    • EP3954972A1
    • 2022-02-16
    • EP20784217.0
    • 2020-03-27
    • Multidimension Technology Co., Ltd
    • QI, BinFENG, LixianGUO, HaipingSHEN, WeifengXUE, Songsheng
    • G01D5/16
    • This invention describes a magnetoresistive inertial sensor chip, comprising a substrate (101), a vibrating diaphragm (102, 102'), a magnetic field sensing magnetoresistor (105) and at least one permanent magnet thin film (108). The vibrating diaphragm (102, 102') is located on one side surface of the substrate (101). The magnetic field sensing magnetoresistor (105) and the permanent magnet thin film (108) are set on the surface of the vibrating diaphragm (102, 102') displaced from the base of the substrate (101). A contact electrode (106) is also arranged on the surface of the vibrating diaphragm (102, 102') away from the base of the substrate (101). The magnetic field sensing magnetoresistor (105) is connected to the contact electrode (106) through a lead (104). The substrate (101) comprises a cavity (103) formed through etching and either one or both of the magnetic field sensing magnetoresistors (105) and the permanent magnet thin film (108) are arranged in a vertical projection area of the cavity (103) in the vibrating diaphragm portion (102, 102'). A magnetic field generated by the permanent magnet thin film (108) changes in the sensing direction of the magnetic field sensing magnetoresistor (105) of magnetoresistive inertial sensor chip, which changes the resistance valve of the magnetic field sensing magnetoresistor (105), thereby producing a change in an output electrical signal. This magnetoresistive inertial sensor chip uses the high-sensitivity and high-frequency response characteristics of a magnetoresistor to improve the output signal strength and frequency response, thereby facilitating the detection of small and high frequency pressure, vibration, or acceleration changes.
    • 10. 发明公开
    • SINGLE RELUCTANCE TMR MAGNETIC FIELD SENSOR CHIP AND CURRENCY DETECTOR MAGNETIC HEAD
    • EINZELRELUKTANZ-TMR-MAGNETFELDSENSORCHIP UND MAGNETKOPF EINES BANKNOTENDETEKTORS
    • EP3026451A1
    • 2016-06-01
    • EP14829581.9
    • 2014-07-25
    • Multidimension Technology Co., Ltd.
    • DEAK, James GezaGUO, Haiping
    • G01R33/09
    • G01R33/098G01R33/09G07D7/04
    • A single magnetoresistor TMR magnetic field sensor chip (101) and magnetic currency detector head; the single magnetoresistor TMR magnetic field sensor chip (101) is installed above a magnetic excitation element; the sensing direction of the chip is parallel to the surface of the chip, and the direction of the magnetic excitation field generated at the chip by the magnetic excitation element is perpendicular to the surface of the chip; the chip comprises a substrate (102), a magnetic biasing structure deposited on the substrate (102), a magnetoresistive element (108), and an input/output terminal; the magnetoresistive element (108) consists of MTJs; the sensing directions of the magnetoresistive element (108) and the MTJs are the same as the sensing direction of the chip; and the direction of a bias magnetic field generated on the chip by the magnetic biasing structure is perpendicular to the sensing direction of the chip. The chip features high sensitivity, high signal-to-noise ratio, small size, high temperature stability and high reliability.
    • 单个磁电阻TMR磁场传感器芯片(101)和磁性货币检测器头; 单个磁敏电阻器TMR磁场传感器芯片(101)安装在磁激励元件上方; 芯片的感测方向平行于芯片的表面,由激磁元件在芯片产生的磁场的方向与芯片的表面垂直; 芯片包括衬底(102),沉积在衬底(102)上的磁偏置结构,磁阻元件(108)和输入/输出端子; 磁阻元件(108)由MTJ组成; 磁阻元件(108)和MTJ的感测方向与芯片的感测方向相同; 并且通过磁偏置结构在芯片上产生的偏置磁场的方向垂直于芯片的感测方向。 该芯片具有灵敏度高,信噪比高,体积小,温度稳定性高,可靠性高等特点。