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    • 1. 发明公开
    • INFRARED SENSOR
    • EP3598089A1
    • 2020-01-22
    • EP18767648.1
    • 2018-03-09
    • Mitsubishi Materials Corporation
    • HIRANO, ShingoSHIRATA, Keiji
    • G01J1/02
    • An infrared sensor in which an influence of infrared rays from a lateral side of a stem member or the like can be inhibited and a decrease in detection accuracy can be inhibited is provided. The infrared sensor according to the present invention comprises a lower sensor member 2, an intermediate mounting member 3 placed on the lower sensor member, and an upper sensor member 4 placed on the intermediate mounting member. The lower sensor member includes an insulating substrate 8 placed on a lower surface of the intermediate mounting member, a compensating heat sensitive element 9 provided on an upper surface of the insulating substrate, and lower pattern wirings formed on the upper surface of the insulating substrate. The upper sensor member includes an insulating film placed on an upper surface of the intermediate mounting member, a detecting heat sensitive element 12 provided on a lower surface of the insulating film, and upper pattern wirings formed on the lower surface of the insulating film. The intermediate mounting member includes a mounting member main body 14 having an element accommodating hole H. The compensating heat sensitive element is disposed in a lower opening portion of the element accommodating hole and the detecting heat sensitive element is disposed in an upper opening portion of the element accommodating hole, and they are face to each other.