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    • 9. 发明公开
    • Process for producing semiconductor devices
    • Verfahren zur Herstellung von Hableitervorrichtungen
    • EP1107299A2
    • 2001-06-13
    • EP00310466.8
    • 2000-11-24
    • LINTEC Corporation
    • Sugino, TakashiSenoo, Hideo
    • H01L21/301
    • H01L21/6836H01L21/3043H01L21/78H01L24/27H01L24/29H01L24/743H01L24/83H01L2221/68327H01L2224/274H01L2224/2919H01L2224/743H01L2224/83191H01L2224/8385H01L2924/01004H01L2924/01005H01L2924/01006H01L2924/01013H01L2924/01027H01L2924/01033H01L2924/01045H01L2924/01074H01L2924/01075H01L2924/01082H01L2924/014H01L2924/0665H01L2924/07802H01L2924/10158H01L2924/10253H01L2924/12044H01L2924/14H01L2924/00H01L2924/3512
    • A process for producing a semiconductor device, comprising the steps of providing a wafer of given thickness having a surface furnished with semiconductor circuits and a back; forming grooves of a cut depth smaller than the thickness of the wafer, said grooves extending from the wafer circuit surface; sticking a surface protective sheet onto the wafer circuit surface; grinding the back of the wafer so that the thickness of the wafer is reduced to thereby finally result in division of the wafer into individual chips with spaces therebetween; sticking a dicing/die bond sheet onto the ground back of the wafer, said dicing/die bond sheet comprising a base and, superimposed thereon, an adhesive layer, said adhering performed so that the adhesive layer is brought into contact with the ground back of the wafer; peeling the surface protective sheet from the wafer circuit surface to thereby cause the adhesive layer of the dicing/die bond sheet to be exposed through each space between neighboring individual chips; cutting the exposed adhesive layer of the dicing/die bond sheet; detaching the individual chips having the cut adhesive layer adhering thereto from the base of the dicing/die bond sheet; and bonding the individual chips through the adhesive layer to a given substrate. This process is advantageous in that an appropriate amount of adhesive layer can easily be formed on the back of extremely thin chips to thereby enable avoiding chip breakage, chip cracking or package cracking, so that a productivity enhancement can be realized.
    • 一种制造半导体器件的方法,包括以下步骤:提供具有带有半导体电路和背面的表面的给定厚度的晶片; 形成切割深度小于晶片厚度的凹槽,所述凹槽从晶片电路表面延伸; 将表面保护片粘在晶片电路表面上; 研磨晶片的背面,使得晶片的厚度减小,从而最终导致晶片分离成具有间隙的各个芯片; 将切割/管芯接合片粘贴到晶片的背面,所述切割/管芯接合片包括基底并且叠加在其上的粘合剂层,所述粘附进行,使得粘合剂层与接地背面接触 晶圆; 从晶片电路表面剥离表面保护片,从而使切割/管芯接合片的粘合剂层通过相邻的各个芯片之间的每个空间露出; 切割切割/模具接合片的暴露的粘合剂层; 从切割/模具接合片的基底分离附着有切割粘合剂层的各个芯片; 并将各个芯片通过粘合剂层粘合到给定的基底上。 该方法的优点在于,可以容易地在极薄的芯片的背面形成适当量的粘合剂层,从而能够避免切屑断裂,切屑破裂或包装开裂,从而可以实现生产率提高。