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    • 3. 发明公开
    • MANUFACTURING METHOD FOR GAS BARRIER FILM, AND ELECTRONIC MEMBER OR OPTICAL MEMBER PROVIDED WITH GAS BARRIER FILM
    • 处理对阻气薄膜和电子元件的或与隔气膜的光学元件
    • EP2786808A1
    • 2014-10-08
    • EP12852991.4
    • 2012-11-28
    • Lintec Corporation
    • IWAYA WataruITO MasaharuKONDO Takeshi
    • B05D7/24B05D3/04B32B9/00B32B27/00B32B27/16
    • C23C14/48B05D3/148B05D7/04C23C18/122C23C28/00
    • The present invention pertains to: a method for producing a gas barrier film that includes at least a base that is formed of a synthetic resin, and a gas barrier layer that is formed on the base, the method comprising a step 1 and 2 below; and an electronic member or an optical member that includes a gas barrier film obtained by the method. In the gas barrier film obtained by means of the present invention, a problem of adhesion failure between the gas barrier layer and the base dose not occur even when the gas barrier film is subjected to high-temperature/high-humidity conditions. [Step 1] that applies a silicon-based polymer compound solution that includes a silicon-based polymer compound and an organic solvent to the base to obtain a film of the silicon-based polymer compound solution, and dries the film by heating to form a layer that includes the silicon-based polymer compound, the base having a gel fraction of 70% or more and less than 98% when immersed in the organic solvent at 23°C for 72 hours; [Step 2] that subjects the layer that includes the silicon-based polymer compound to a plasma treatment to form the gas barrier layer.
    • 本发明涉及:一种用于制备阻气膜,确实包括至少一个基座并形成有合成树脂,并且气体阻隔层没有形成在基底上,该方法包括步骤1和2; 和电子部件或光学构件确实包括一个阻气通过该方法成膜得到。 在阻气性通过本发明的手段膜得到的,气体阻隔层和基材之间的粘合失败的问题剂量不会即使当气体阻隔性膜,进行高温/高湿度条件时。 [步骤1]做了适用的硅基聚合物化合物溶液确实包括与有机溶剂的在基座上的硅基聚合物化合物,以获得基于硅的聚合物化合物溶液的膜,并通过加热干燥该膜,以形成 层做包括硅基聚合物化合物,为70%以上且小于98%的凝胶分数。当在23℃下浸渍在有机溶剂中72小时的基础; [步骤2]没有受试者层确实包括基于硅的聚合物化合物等离子处理,以形成气体阻隔层。
    • 5. 发明公开
    • MOLDED OBJECT, PROCESS FOR PRODUCING SAME, MEMBER FOR ELECTRONIC DEVICE, AND ELECTRONIC DEVICE
    • 表单对象,用于生产该元件的电子器件和电子设备
    • EP2433980A1
    • 2012-03-28
    • EP10777840.9
    • 2010-05-21
    • LINTEC Corporation
    • HOSHI ShinichiITO MasaharuUEMURA KazueSUZUKI Yuta
    • C08J7/00B32B27/16G02F1/1333H01L31/042H05B33/04H05B33/14
    • C23C14/48B32B27/06B32B2307/7244C08J7/047C08J7/123C08J2383/05G02F1/133305G02F2201/501G02F2201/503H01L31/049Y02E10/50
    • A formed article comprising a gas barrier layer that is formed of a material including at least an oxygen atom, a carbon atom, and a silicon atom, the gas barrier layer including an area (A) where an oxygen atom content rate gradually decreases, and a carbon atom content rate gradually increases in a depth direction from a surface, the area (A) including a partial area (A1) and a partial area (A2), the (A1) having an oxygen atom content rate of 20 to 55%, a carbon atom content rate of 25 to 70%, and a silicon atom content rate of 5 to 20% based on the total content rate of oxygen atoms, carbon atoms, and silicon atoms, and the (A2) having an oxygen atom content rate of 1 to 15%, a carbon atom content rate of 72 to 87%, and a silicon atom content rate of 7 to 18% based on the total content rate of oxygen atoms, carbon atoms, and silicon atoms; a method of producing the same; an electronic device member; an electronic device. The formed article exhibits an excellent gas barrier capability, excellent bendability, excellent adhesion, and excellent surface flatness.
    • 成形制品,其包含的气体阻隔层并形成在包括至少氧原子,碳原子和硅原子,在气体阻隔层包含在区域中的材料的(A),其中氧原子的存在比例逐渐减小,并 一个碳原子的存在比例在深度方向逐渐增加从一个表面上,包括一个部分区域(A1)和具有在20〜55%的氧原子的存在比例的部分区域(A2)中,(A1)的区域(A) 的25〜70%,和5〜20%,基于氧原子,碳原子和硅原子,和(A2)的总含有率的硅原子的存在比例具有的氧原子含量的碳原子含有率 的1至15%,72至87%的碳原子的存在比例,及7〜18%,基于氧原子,碳原子和硅原子的总含有率的硅原子的存在比例率; 产生相同的方法; 电子设备部件; 的电子装置。 形成的物品表现出优异的阻气性,优异的弯曲加工性,优良的粘合性,和优异的表面平坦性。
    • 9. 发明公开
    • GAS BARRIER FILM, METHOD FOR PRODUCING SAME, GAS BARRIER FILM LAMINATE, MEMBER FOR ELECTRONIC DEVICES, AND ELECTRONIC DEVICE
    • GASSPERRFOLIE,HERSTELLUNGSVERFAHRENDAFÜR,GASSPERRFOLIENLAMINAT,ELEMENTFÜRELEKTRONISCHE VORRICHTUNGEN UND ELEKTRONISCHE VORRICHTUNG
    • EP2774755A1
    • 2014-09-10
    • EP12846522.6
    • 2012-11-02
    • Lintec Corporation
    • IWAYA WataruFUJIMOTO HironobuTAYA NaokiITO MasaharuKONDO Takeshi
    • B32B27/00B32B9/00C08K5/103C08L101/00H01L51/50H05B33/02
    • The present invention provides: a gas barrier film comprising a cured resin layer and a gas barrier layer, the gas barrier layer being provided on at least one side of the cured resin layer,
      the cured resin layer being a layer formed of a cured product of a curable resin composition that includes (A) a thermoplastic resin having a glass transition temperature (Tg) of 140°C or more, and (B) a curable monomer,
      the gas barrier film having a water vapor transmission rate of 1 g/m 2 /day or less at a temperature of 40°C and a relative humidity of 90%; a method for producing the gas barrier film; a gas barrier film laminate comprising the gas barrier film; an electronic device member comprising the gas barrier film; an electronic device member comprising the gas barrier film laminate; an electronic device comprising the electronic device member.
      Since the gas barrier film and the gas barrier film laminate of the present invention exhibits excellent heat resistance, excellent solvent resistance, excellent interlayer adhesion, and an excellent gas barrier capability, has a low birefringence, and exhibits excellent optical isotropy, the gas barrier film and the gas barrier film laminate may suitably be used as an electronic device member.
    • 本发明提供一种阻气膜,其具有固化树脂层和阻气层,所述阻气层设置在所述固化树脂层的至少一侧,所述固化树脂层为由固化树脂层和固化树脂层的固化物形成的层 包含(A)玻璃化转变温度(Tg)为140℃以上的热塑性树脂和(B)固化性单体的固化性树脂组合物,所述阻气膜的水蒸气透过率为1g / m 2 在40℃的温度和90%的相对湿度下为2 /天以下。 阻气膜的制造方法; 包含阻气膜的阻气膜层压体; 包括所述阻气膜的电子设备构件; 包括所述阻气膜层压体的电子器件部件; 包括电子设备构件的电子设备。 由于本发明的阻气膜和阻气膜层叠体显示出优异的耐热性,优异的耐溶剂性,优异的层间粘合性和优异的阻气性,具有低双折射性,并且表现出优异的光学各向同性,阻气膜 并且阻气膜层压体可以适当地用作电子器件部件。