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1. 发明授权

EP2548981B1 LOW -DOSE TIN OR TIN ALLOY AND METHOD FOR PRODUCING SAME 有权
公开(公告)号：EP2548981B1
公开(公告)日：2020-09-02
申请号：EP11756014.4
申请日：2011-02-14
申请人： JX Nippon Mining & Metals Corporation
发明人： KANOU Gaku
IPC分类号： C22B25/08 , B23K35/26 , C22B3/04 , C22B3/44 , C22C13/00 , C25C1/14

2. 发明公开

EP2684970A1 COPPER OR COPPER ALLOY REDUCED IN -RAY EMISSION, AND BONDING WIRE OBTAINED FROM COPPER OR COPPER ALLOY AS RAW MATERIAL 审中-公开
标题翻译：铜或铜合金具有降低的伽马射线发射和铜OUT或铜合金为原料获得ABBINDEDRAHT
公开(公告)号：EP2684970A1
公开(公告)日：2014-01-15
申请号：EP12754623.2
申请日：2012-02-15
申请人： JX Nippon Mining & Metals Corporation
发明人： KANOU Gaku
IPC分类号： C22B15/14 , C22C9/00 , C22C9/08 , C25C1/00 , C25C1/12 , C25C7/04 , H01L21/60
CPC分类号： B23K35/302 , C22C9/00 , C22C9/08 , C25C1/12 , H01L24/43 , H01L24/45 , H01L2224/43 , H01L2224/45015 , H01L2224/45147 , H01L2924/00011 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/00 , H01L2924/01204 , H01L2924/01005 , H01L2924/01056 , H01L2924/01004 , H01L2924/01083 , H01L2924/0102 , H01L2924/01058 , H01L2924/01027 , H01L2924/01024 , H01L2924/01066 , H01L2924/01063 , H01L2924/01064 , H01L2924/01032 , H01L2924/01049 , H01L2924/01077 , H01L2924/01057 , H01L2924/01012 , H01L2924/01042 , H01L2924/0106 , H01L2924/01046 , H01L2924/01078 , H01L2924/01045 , H01L2924/01044 , H01L2924/01051 , H01L2924/0105 , H01L2924/01038 , H01L2924/01039 , H01L2924/01022 , H01L2924/0107 , H01L2924/0103 , H01L2924/0104 , H01L2924/01092 , H01L2924/20752 , H01L2924/013 , H01L2224/48
摘要： Copper or a copper alloy characterized in having an α-ray emission of 0.001 cph/cm 2 or less. Since recent semiconductor devices are produced to have higher density and higher capacity, there is greater risk of soft errors caused by the influence of α rays emitted from materials positioned near semiconductor chips. In particular, there are strong demands for achieving higher purification of copper and copper alloys which are used near the semiconductor device, such as copper or copper alloy wiring lines, copper or copper alloy bonding wires, and soldering materials, and materials reduced in α-ray emission are also demanded. Thus, the present invention elucidates the phenomenon in which α rays are emitted from copper or copper alloys, and provides copper or copper alloy reduced in α-ray emission which is adaptable to the demanded material, and a bonding wire in which such copper or copper alloy is used as its raw material.
摘要翻译：铜或铜合金dadurch gekennzeichnet，具有为0.001cph / cm 2以下的±射线发射。由于近年来的半导体器件生产为具有更高的密度和更高的容量，存在由±的影响引起的软错误的风险更大的射线从邻近的半导体芯片定位材料发射。具体地，存在用于实现铜和铜合金的更高的纯化哪些是附近的半导体器件中，用于彩色强烈要求：如铜或铜合金布线，铜或铜合金接合线，和焊接材料，并且材料在±降低 - 因此射线发射要求较高。因此，本发明阐明了在哪±射线从铜或铜合金所发射的现象，并且提供了在±射线发射所有这些是适用于所要求的材料还原的铜或铜合金，并且其中接合线寻求铜或铜合金用作其原料。

3. 发明公开

EP2548981A1 LOW -DOSE TIN OR TIN ALLOY AND METHOD FOR PRODUCING SAME 有权
标题翻译： ZINN ODER ZINNLEGIERUNG MIT GERINGER？-DOSIS UND HERSTELLUNGSVERFAHRENDAFÜR
公开(公告)号：EP2548981A1
公开(公告)日：2013-01-23
申请号：EP11756014.4
申请日：2011-02-14
申请人： JX Nippon Mining & Metals Corporation
发明人： KANOU Gaku
IPC分类号： C22B25/08 , B23K35/26 , C22B3/04 , C22B3/44 , C22C13/00 , C25C1/14
CPC分类号： C22C13/00 , B23K35/262 , B23K35/36 , B23K35/40 , B23K2101/40 , C22B25/08
摘要： Disclosed is tin characterized in that a sample of the tin after melting and casting has an α dose of less than 0.0005 cph/cm 2 . Since recent semiconductor devices are highly densified and of high capacity, there is an increasing risk of soft errors caused by the influence of α rays emitted from materials in the vicinity of semiconductor chips. In particular, there are strong demands for high purification of solder materials and tin for use in the vicinity of semiconductor devices, and demands for materials with lower α rays. Accordingly, an object of the present invention is to clarify the phenomenon of the generation of α rays in tin and tin alloys, and to obtain high-purity tin, in which the α dose has been reduced, suitable for the required materials, as well as a method for producing the same.
摘要翻译：公开了锡，其特征在于熔融和铸造后的锡样品的±剂量小于0.0005cph / cm 2。由于最近的半导体器件具有高度致密化和高容量性，所以存在由半导体芯片附近的材料发射的±射线的影响引起的软误差的风险增加。特别是对于在半导体器件附近使用的焊料材料和锡的高纯度化以及对±射线偏差低的材料的要求很强烈。因此，本发明的目的是澄清锡和锡合金中产生±射线的现象，并获得适合所需材料的±剂量已经降低的高纯度锡作为其制造方法。

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