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2. 发明公开

EP2548981A4 LOW -DOSE TIN OR TIN ALLOY AND METHOD FOR PRODUCING SAME 有权
标题翻译： ZINN ODER ZINNLEGIERUNG MIT GERINGER？-DOSIS UND HERSTELLUNGSVERFAHRENDAFÜR
公开(公告)号：EP2548981A4
公开(公告)日：2017-08-30
申请号：EP11756014
申请日：2011-02-14
申请人： JX NIPPON MINING & METALS CORP
发明人： KANOU GAKU
IPC分类号： C22B25/08 , B23K35/26 , C22B3/04 , C22B3/44 , C22C13/00 , C25C1/14
CPC分类号： C22C13/00 , B23K35/262 , B23K35/36 , B23K35/40 , B23K2201/40 , C22B25/08
摘要： Disclosed is tin characterized in that a sample of the tin after melting and casting has an ± dose of less than 0.0005 cph/cm 2 . Since recent semiconductor devices are highly densified and of high capacity, there is an increasing risk of soft errors caused by the influence of ± rays emitted from materials in the vicinity of semiconductor chips. In particular, there are strong demands for high purification of solder materials and tin for use in the vicinity of semiconductor devices, and demands for materials with lower ± rays. Accordingly, an object of the present invention is to clarify the phenomenon of the generation of ± rays in tin and tin alloys, and to obtain high-purity tin, in which the ± dose has been reduced, suitable for the required materials, as well as a method for producing the same.
摘要翻译：本发明公开了一种锡，其特征在于熔化和铸造后的锡样品的±剂量小于0.0005cph / cm 2。由于近来的半导体器件高度致密并且具有高容量，因此由半导体芯片附近的材料发射的±射线的影响导致软错误的风险增加。特别是强烈要求在半导体器件附近使用的焊锡材料和锡的高纯度化，以及低±射线材料的要求。因此，本发明的一个目的是澄清锡和锡合金中±射线产生的现象，并且获得适合于所需材料的±纯度降低的高纯度锡作为其制造方法。

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