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1. 发明授权

EP0497478B1 Low impedance, high voltage protection circuit 失效
标题翻译：过电压保护电路具有低阻抗
公开(公告)号：EP0497478B1
公开(公告)日：1997-03-05
申请号：EP92300420.4
申请日：1992-01-17
申请人： JOHN FLUKE MFG. CO., INC.
发明人： Carson, Daniel B.
IPC分类号： H02H9/04 , G01R1/36
CPC分类号： G01R1/36 , H01L2924/0002 , H02H9/04 , H01L2924/00

2. 发明公开

EP0497478A2 Low impedance, high voltage protection circuit 失效
标题翻译： Überspannungsschutzschaltungmit niedriger Impedanz。
公开(公告)号：EP0497478A2
公开(公告)日：1992-08-05
申请号：EP92300420.4
申请日：1992-01-17
申请人： JOHN FLUKE MFG. CO., INC.
发明人： Carson, Daniel B.
IPC分类号： H02H9/04 , G01R1/36
CPC分类号： G01R1/36 , H01L2924/0002 , H02H9/04 , H01L2924/00
摘要： A low impedance ovevoltage protection circuit includes a first MOSFET having a drain connected to an input signal and a source connected to a drain of a second MOSFET, the source of the second MOSFET being coupled to the output. The gates of the first and second MOSFETs are connected to voltage supplies which float relative to the input signal values so as to maintain the gates of the respective MOSFETs biased to a conducting state. The maximum and minimum values to which the floating voltage supplies will float are defined by clamping diodes and clamp voltage sources. When the input signal value exceeds a desired positive maximum value, the first MOSFET is no longer biased to an on state whereby the MOSFET turns off, shunting the input signal through a high impedance for limiting input current and removing the input signal from the output. Negative going peak values are removed in a like manner by the second MOSFET. Bipolar transistors are coupled to each MOSFET to allow quick turn off in the event of rapid rise time transient input values.
摘要翻译：低阻抗波形保护电路包括具有连接到输入信号的漏极的第一MOSFET和连接到第二MOSFET的漏极的源极，第二MOSFET的源极耦合到输出端。第一和第二MOSFET的栅极连接到相对于输入信号值浮动的电压源，以便将各个MOSFET的栅极保持偏置到导通状态。浮动电压供应浮动的最大值和最小值由钳位二极管和钳位电压源定义。当输入信号值超过期望的正最大值时，第一个MOSFET不再被偏置到导通状态，由此MOSFET关断，通过高阻抗分流输入信号以限制输入电流并从输出中去除输入信号。负向峰值以类似的方式被第二MOSFET去除。双极晶体管耦合到每个MOSFET，以在快速上升时间瞬态输入值的情况下快速关闭。

3. 发明公开

EP0497478A3 Low impedance, high voltage protection circuit 失效
标题翻译：低阻抗，高压保护电路
公开(公告)号：EP0497478A3
公开(公告)日：1993-03-31
申请号：EP92300420.4
申请日：1992-01-17
申请人： JOHN FLUKE MFG. CO., INC.
发明人： Carson, Daniel B.
IPC分类号： H02H9/04 , G01R1/36
CPC分类号： G01R1/36 , H01L2924/0002 , H02H9/04 , H01L2924/00
摘要： A low impedance ovevoltage protection circuit includes a first MOSFET having a drain connected to an input signal and a source connected to a drain of a second MOSFET, the source of the second MOSFET being coupled to the output. The gates of the first and second MOSFETs are connected to voltage supplies which float relative to the input signal values so as to maintain the gates of the respective MOSFETs biased to a conducting state. The maximum and minimum values to which the floating voltage supplies will float are defined by clamping diodes and clamp voltage sources. When the input signal value exceeds a desired positive maximum value, the first MOSFET is no longer biased to an on state whereby the MOSFET turns off, shunting the input signal through a high impedance for limiting input current and removing the input signal from the output. Negative going peak values are removed in a like manner by the second MOSFET. Bipolar transistors are coupled to each MOSFET to allow quick turn off in the event of rapid rise time transient input values.

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