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1. 发明公开

EP3951023A1 METHOD AND APPARATUS FOR MANUFACTURING MONOCRYSTALLINE SILICON 审中-实审
公开(公告)号：EP3951023A1
公开(公告)日：2022-02-09
申请号：EP20193393.4
申请日：2020-08-28
申请人： Zhejiang Jinko Solar Co., Ltd. , JINKO SOLAR CO., LTD
发明人： YANG, Jun , SHANG, Weize , BAI, Xiaolong
IPC分类号： C30B15/14 , C30B15/20 , C30B29/06
摘要： A method for manufacturing a monocrystalline silicon with a Czochralski process, including: providing a polycrystalline silicon and a dopant to a quartz crucible; placing the quartz crucible in a single crystal furnace and vacuumizing the furnace, and melting the polycrystalline silicon under an atmosphere of a protective gas to obtain silicon melt; after a temperature of the silicon melt is stable, immersing a seed crystal into the silicon melt to start a seeding process, during the seeding process, lifting a water-cooling heat shield in a direction away from a surface of the silicon melt to adjust a distance between a bottom of the water-cooling heat shield and the surface of the silicon melt to a first preset distance; after the seeding process is completed, performing a shouldering process to continuously pull the crystal, and gradually increase a diameter of the pulled crystal to a preset width; starting a constant-diameter body growth process, lowering the water-cooling heat shield in a direction towards the surface of the silicon melt to adjust the distance between the bottom of the water-cooling heat shield and the surface of the silicon melt to a second preset distance; after the constant-diameter body growth process is completed, entering a tailing stage during which the diameter of the pulled crystal is gradually reduced until the pulled crystal is separated from the silicon melt; and cooling the pulled crystal to room temperature and taking out the cooled crystal from the single crystal furnace as the monocrystalline silicon. With the method and apparatus for manufacturing a monocrystalline silicon, the longitudinal temperature gradient of the monocrystalline silicon crystal and the growth speed of the monocrystalline silicon can be increased.

2. 发明公开

EP3836230A1 METHOD FOR MANUFACTURING MONOCRYSTALLINE SILICON CELL AND MONOCRYSTALLINE SILICON WAFER, AND PHOTOVOLTAIC MODULE 审中-公开
公开(公告)号：EP3836230A1
公开(公告)日：2021-06-16
申请号：EP20198972.0
申请日：2020-09-29
申请人： JINKO SOLAR CO., LTD , ZHEJIANG JINKO SOLAR CO., LTD.
发明人： BAI, Xiaolong , HE, Lizhu , ZHANG, Xinyu , WANG, Peiyuan , YANG, Jun , OU, Ziyang , HUANG, Jide , SHANG, Weize , JIN, Hao
IPC分类号： H01L31/042 , H01L31/18
摘要： Provided is a method for manufacturing at least one solar cell, a method for manufacturing a monocrystalline silicon wafer and a photovoltaic module. The method for manufacturing a monocrystalline silicon wafer includes: providing a monocrystalline silicon rod; squaring the monocrystalline silicon rod to form a quasi-square silicon rod with quasi-square cross-section having an arc, a length of the arc being not less than 15mm; slicing the quasi-square silicon rod to form at least one quasi-square silicon wafer having the arc. The method for manufacturing at least one solar cell includes: using the method described above to obtain a quasi-square silicon wafer having an arc; forming a first solar cell by processing the quasi-square silicon wafer; scribing the first solar cell to obtain a square-shaped sub-solar cell and at least one strip-shaped sub-solar cell. The above methods improve the utilization rate of the monocrystalline silicon rod and reduce production cost.

3. 发明公开

EP3960910A1 APPARATUS AND METHOD FOR CONTINUOUS CRYSTAL PULLING 审中-公开
公开(公告)号：EP3960910A1
公开(公告)日：2022-03-02
申请号：EP20198978.7
申请日：2020-09-29
申请人： Jinko Green Energy (Shanghai) Management Co., Ltd , JINKO SOLAR CO., LTD
发明人： YANG, Jun , SHANG, Weize , BAI, Xiaolong
IPC分类号： C30B15/00 , C30B15/12 , C30B15/30 , C30B29/06 , C30B15/02
摘要： Provided is an apparatus and a method for continuous crystal pulling. The apparatus includes: a crucible including a first sub-crucible and a second sub-crucible located at inner side of the first sub-crucible; a draft tube located above the crucible; and a delivery duct supplying materials to the crucible. A ratio of inner diameter of the second sub-crucible to outer diameter of the draft tube is ≥1.05. In a first state, a distance between bottom surface of the draft tube and bottom surface of the crucible is a first distance, in a second state, a distance between bottom surface of the draft tube and bottom surface of the crucible is a second distance. The first distance is greater than the second distance. In the first and second states, a distance between a crystal-liquid interface in the crucible and the bottom surface of the draft tube remains substantially unchanged.

4. 发明公开

EP3933076A1 METHOD FOR PREPARING MONOCRYSTALLINE SILICON AND SOLAR CELL AND PHOTOVOLTAIC MODULE WITH MONOCRYSTALLINE SILICON 审中-公开
公开(公告)号：EP3933076A1
公开(公告)日：2022-01-05
申请号：EP20192171.5
申请日：2020-08-21
申请人： Jinko Green Energy (Shanghai) Management Co., Ltd , JINKO SOLAR CO., LTD
发明人： HE, Lizhu , YANG, Jun , WANG, Peiyuan , LIU, Limeng , XU, Xiang , BAI, Xiaolong , SHANG, Weize
IPC分类号： C30B15/04 , C30B29/06 , H01L31/00
摘要： Provided is a method for preparing a gallium- and nitrogen-doped monocrystalline silicon using a Czochralski process, including: introducing a doping gas at least including a first amount of nitrogen into a molten mixture in a single crystal furnance; withdrawing a seed from the molten mixture while introducing the doping gas including a second amount of nitrogen into the molten mixture, a second ratio of the second amount of nitrogen to the doping gas being smaller than the first ratio; and upon occurrence of a shoulder of the monocrystalline silicon rod, adjusting the second amount of nitrogen to a third amount in such a manner that a third ratio of the third amount of nitrogen to the doping gas is greater than the second ratio, to form a monocrystalline silicon rod . A solar cell and a photovoltaic module including a gallium- and nitrogen-doped silicon wafer prepared therefrom are also provided.

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