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    • 4. 发明公开
    • Method of fabricating a ribbon structure
    • Verfahren zur Herstellung einer Bandstruktur。
    • EP0040488A1
    • 1981-11-25
    • EP81301979.1
    • 1981-05-06
    • International Business Machines Corporation
    • Chaudhari, PraveenLacey, James AndrewMueller, Rene
    • B22D11/06C30B15/00H01L31/18
    • B22D11/0611B22D11/005B22D11/007B22D11/0697C30B11/008C30B29/06
    • In a method of fabricating a layered ribbon structure (24), metal, such as copper, iron, iron alloy or silver, is melted in a crucible (4) by an RF heater (8) and ejected through a nozzle (10) by inert gas supplied under pressure through a pipe (18) and regulated by a valve (22). The stream of molten metal from the nozzle is directed at a small angle to the vertical upon the crest of a rotating wheel (14) to generate a moving ribbon (11). A dissimilar material of lower melting point, such as a semiconductor material, silicon, germanium or gallium arsenide, is melted in a second crucible (2) by an RF heater (6) and ejected through a nozzle (12) by inert gas supplied under pressure through a pipe (16) and regulated by a valve (20).
      The stream of molten semiconductor material is directed parallel to the stream of molten metal upon the moving ribbon of metal to generate a ribbon (13) which forms a second layer of layered ribbon structure (24). The method may be used for the mass production of semiconductor devices such as diodes, solar cells and the like.
    • 在制造层状带结构(24)的方法中,诸如铜,铁,铁合金或银的金属通过RF加热器(8)在坩埚(4)中熔化并通过喷嘴(10)通过 惰性气体通过管道(18)在压力下供应并由阀(22)调节。 来自喷嘴的熔融金属流以与旋转轮(14)的顶部上的垂直方向成小角度地产生移动的带(11)。 较低熔点的不同材料,例如半导体材料,硅,锗或砷化镓,通过RF加热器(6)在第二坩埚(2)中熔化,并通过喷嘴(12)通过惰性气体喷射 通过管道(16)的压力并由阀门(20)调节。 熔融半导体材料流平行于金属流在流动的金属带上,以形成形成第二层分层带结构(24)的带(13)。 该方法可用于大量生产二极管,太阳能电池等半导体器件。