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1. 发明公开

EP0862226A2 Apparatus and method for detecting electromagnetic radiation or ionizing particles 失效
标题翻译：装置和方法用于检测电磁辐射或电离粒子的
公开(公告)号：EP0862226A2
公开(公告)日：1998-09-02
申请号：EP98830089.3
申请日：1998-02-24
申请人： ISTITUTO NAZIONALE DI FISICA NUCLEARE , Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V.
发明人： Castoldi, Andrea , Gatti, Emilio , Guazzoni, Chiara , Longoni, Antonio , Rehak, Pavel , Strüder, Lothar
IPC分类号： H01L31/02 , H01L31/115
CPC分类号： H01L27/14658
摘要： An apparatus for detecting energy and point of incidence of an ionizing event comprising a semiconductor layer (1, 2) with a first type of conductivity, in which at least one first doped region (AN1-AN4; AR; 52) with the first type of conductivity and a corresponding plurality of second doped regions (P1-Pn; S1-S7; 50, 50') with a second type of conductivity associated to said at least one first doped region are formed on a first surface of said layer, said at least first doped region and said corresponding plurality of second doped regions defining a respective drift path for charge carriers with the first type of conductivity, and at least one third doped region (3) with the second type of conductivity is formed on a second surface of said layer, and means (6; R, M1-M8; 6') for biasing said second doped regions and said third doped region which is capable of reversely biasing the junctions between the second doped regions and the semiconductor layer and between the third doped region and the semiconductor layer so as to deplete the semiconductor layer. Said biasing means is capable of providing two different operating conditions of the detection apparatus, the first operating condition providing the formation of a plurality of potential energy wells for said charge carriers in the semiconductor layer (1, 2) at predetermined distances along said drift path from said first doped region (AN1-AN4; AR; 52), said wells being able to confine all of the charge carriers generated by an ionizing event essentially to the points of incidence of the ionizing event, the second operating condition providing the removal of said potential energy wells so as to cause the charge carriers to drift towards said at least one first doped region along said drift path and keeping the charge carriers confined to directions which are perpendicular to the drift path. The electric fields in the apparatus are different, although static in the two different operating conditions.
摘要翻译：与第一种类型用于检测电离事件，其包括半导体层的入射能量和点（1,2）具有第一导电类型，其中至少一个第一掺杂区的装置（52 AN1-AN4; AR）电导率和第二掺杂区（S1-S7; P1-PN 50，50“）的相应的多个与第二类型关联到所述电导率中的至少一个第一掺杂区形成在所述层，所述的第一表面至少第一掺杂区域和所述对应第二掺杂区定义为与所述第一导电类型的载流子的respectivement漂移路径的多个，并且至少一个第三掺杂区域（3）与所述第二导电类型的被形成在第二表面上用于偏置所述第二掺杂区和所述第三掺杂区的所有其能够反向偏置第二掺杂区和所述半导体层之间以及第三之间的连接处;所述层的装置，以及（6“6 R，M1-M8）的掺杂区和所述半导体层，以便耗尽该半导体层。所述偏置装置能够提供的检测设备的两个不同的操作条件的，所述第一操作条件提供用于在半导体层中所述电荷载体势能阱的多个形成（1，2）在沿着所述漂移路径的预定距离从所述第一掺杂区（AN1-AN4; AR; 52），所述孔能够通过基本上电离事件到电离事件的入射点来限制所有所产生的电荷载流子，所述第二操作条件下提供所述切除的所述电位能量井，从而使电荷载流子，以朝向所述至少一个第一掺杂沿着所述漂移路径区域，并保持局限于方向，它们垂直于所述漂移路径的电荷载体。在该装置中的电场不同漂移，虽然静中有两种不同的操作条件。

2. 发明授权

EP0862226B1 Apparatus and method for detecting electromagnetic radiation or ionizing particles 失效
标题翻译：装置和方法用于检测电磁辐射或电离粒子的
公开(公告)号：EP0862226B1
公开(公告)日：2001-12-12
申请号：EP98830089.3
申请日：1998-02-24
申请人： ISTITUTO NAZIONALE DI FISICA NUCLEARE , Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V.
发明人： Castoldi, Andrea , Gatti, Emilio , Guazzoni, Chiara , Longoni, Antonio , Rehak, Pavel , Strüder, Lothar
IPC分类号： H01L31/02 , H01L31/115
CPC分类号： H01L27/14658

3. 发明公开

EP0862226A3 Apparatus and method for detecting electromagnetic radiation or ionizing particles 失效
标题翻译：装置和方法用于检测电磁辐射或电离粒子的
公开(公告)号：EP0862226A3
公开(公告)日：1999-04-07
申请号：EP98830089.3
申请日：1998-02-24
申请人： ISTITUTO NAZIONALE DI FISICA NUCLEARE , Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V.
发明人： Castoldi, Andrea , Gatti, Emilio , Guazzoni, Chiara , Longoni, Antonio , Rehak, Pavel , Strüder, Lothar
IPC分类号： H01L31/02 , H01L31/115
CPC分类号： H01L27/14658
摘要： An apparatus for detecting energy and point of incidence of an ionizing event comprising a semiconductor layer (1, 2) with a first type of conductivity, in which at least one first doped region (AN1-AN4; AR; 52) with the first type of conductivity and a corresponding plurality of second doped regions (P1-Pn; S1-S7; 50, 50') with a second type of conductivity associated to said at least one first doped region are formed on a first surface of said layer, said at least first doped region and said corresponding plurality of second doped regions defining a respective drift path for charge carriers with the first type of conductivity, and at least one third doped region (3) with the second type of conductivity is formed on a second surface of said layer, and means (6; R, M1-M8; 6') for biasing said second doped regions and said third doped region which is capable of reversely biasing the junctions between the second doped regions and the semiconductor layer and between the third doped region and the semiconductor layer so as to deplete the semiconductor layer. Said biasing means is capable of providing two different operating conditions of the detection apparatus, the first operating condition providing the formation of a plurality of potential energy wells for said charge carriers in the semiconductor layer (1, 2) at predetermined distances along said drift path from said first doped region (AN1-AN4; AR; 52), said wells being able to confine all of the charge carriers generated by an ionizing event essentially to the points of incidence of the ionizing event, the second operating condition providing the removal of said potential energy wells so as to cause the charge carriers to drift towards said at least one first doped region along said drift path and keeping the charge carriers confined to directions which are perpendicular to the drift path. The electric fields in the apparatus are different, although static in the two different operating conditions.

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