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1. 发明公开

EP3494868A1 A SYSTEM FOR SENSING OF A PARAMETER OF A LIVING BEING AND AN ELECTRONIC UNIT FOR USE IN A SYSTEM 审中-公开
公开(公告)号：EP3494868A1
公开(公告)日：2019-06-12
申请号：EP17205852.1
申请日：2017-12-07
申请人： IMEC vzw , Stichting IMEC Nederland
发明人： Polito, Salvatore , Myny, Kris
IPC分类号： A61B5/00 , A61B5/04 , A61B5/053 , A61B5/1455
摘要： A system for sensing of a parameter of a living being comprises: a thin film transistor, TFT, unit (110; 310) being configured for attachment to a body part of the living being and said TFT unit (110; 310) comprising at least one sensor (112) with associated sensor circuitry (114) for sensing the parameter of the living being; and an electronic unit (120; 320), wherein the electronic unit (120) and the TFT unit (110) are configured for detachably physically connecting the electronic unit (120) to the TFT unit (110) or arrangement of the electronic unit (320) on the body part in physical contact with the TFT unit (310), wherein the TFT unit (110; 310) and the electronic unit (120; 320) form a wireless contact for powering the TFT unit (110; 310) by the electronic unit (120; 320) and communicating sensing results from the TFT unit (110; 310) to the electronic unit (120; 320).

2. 发明公开

EP4084468A1 AN ACTIVE THIN-FILM CHARGE SENSOR ELEMENT 审中-实审
公开(公告)号：EP4084468A1
公开(公告)日：2022-11-02
申请号：EP21171195.7
申请日：2021-04-29
申请人： Imec VZW , Katholieke Universiteit Leuven KU Leuven Research & Development
发明人： Siskos, Aris , De Roose, Florian , Myny, Kris , Dehaene, Wim
IPC分类号： H04N5/3745 , H01L27/146 , G01N27/414
摘要： An active thin-film charge sensor element comprising a charge collecting detector configured to detect a predetermined physical quantity and generate a corresponding intensity signal at an internal charge sensor element node. An amplifier transistor, the amplifier transistor comprising at least one gate that is electrically connected to the charge collecting detector at the internal charge sensor element node, and configured to amplify the intensity signal. A reset transistor, the reset transistor is electrically connected to the internal charge sensor element node and configured to reset the intensity signal, and wherein at least one of the amplifier transistor or reset transistor comprises a front gate and a back gate and wherein the front and back gates are configured to control the amplifier transistor or reset transistor.

3. 发明公开

EP4177876A1 PIXEL CIRCUIT 无效
公开(公告)号：EP4177876A1
公开(公告)日：2023-05-10
申请号：EP21206318.4
申请日：2021-11-03
申请人： Imec VZW , Katholieke Universiteit Leuven KU Leuven Research & Development
发明人： Verschueren, Lynn , Myny, Kris , Genoe, Jan , Dehaene, Wim
IPC分类号： G09G3/3233
摘要： A pixel circuit (200, 300, 400) integrable as part of a display (280), comprises a selection block (102) connected to a selection line (104) and to a data line (105) and configured to receive pixel data on said data line (105) upon assertion of said selection line (104); a driver-side pixel data storage element (108); and a driver block (110) connectable to a self-emitting pixel element (112) for driving said self-emitting pixel element (112), wherein an instantaneous brightness of said self-emitting pixel element (112) is controlled based on said driver-side pixel data storage element (108), said pixel circuit (200, 300, 400) further comprising an intermediate storage block (202) comprising an intermediate pixel data storage element (208) and connected to said selection block (102), to said driver-side pixel data storage element (108), and to a latch line (204), wherein said pixel circuit (200, 300, 400) is configured so that the pixel data input on said data line (105) is transferred to said intermediate pixel data storage element (208) upon assertion of said selection line (104), and so that pixel data is transferred from said intermediate pixel data storage element (208) to said driver-side pixel data storage element (108) upon assertion of said latch line (204).

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