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1. 发明公开

EP3929641A1 A SEMICONDUCTOR PACKAGE COMPRISING ONE OR MORE OPTICAL INTEGRATED CIRCUITS 审中-公开
公开(公告)号：EP3929641A1
公开(公告)日：2021-12-29
申请号：EP20181927.3
申请日：2020-06-24
申请人： IMEC VZW , Universiteit Gent
发明人： Van Steenberge, Geert , Beyne, Eric , Roelkens, Günther , Van Campenhout, Joris , Missinne, Jeroen
IPC分类号： G02B6/122 , G02B6/30 , G02B6/38 , G02B6/42 , G02B6/13
摘要： According to the invention, one or more photonic integrated circuit chips or PICs (1) are packaged, preferably together with electronic ICs (2) and/or other PICs (1'), in a mould substrate produced on wafer scale by the technology known as fan-out wafer level packaging. Integrated in the package is at least one optical redistribution layer (10) comprising one or more polymer waveguides (21) coupled respectively to semiconductor waveguides (23) on at least one of the PICs. The package furthermore comprises one or more adapter dies (11) comprising one or more attachment and/or alignment features (22) configured to associate with corresponding features on a connector comprising one or more optical fibres, so that when the connector is attached to the package, the one or more fibres are facing one or more polymer waveguides (21) at an end face of the optical redistribution layer (10). The methods for producing the package of the invention combine overmoulding techniques with direct write lithography for the accurate processing of the polymer waveguides (21), relative to the semiconductor waveguides (23) on the PICs (1).

2. 发明授权

EP3038167B1 Integrated avalanche germanium photodetector 有权
标题翻译：集成雪崩锗光电探测器
公开(公告)号：EP3038167B1
公开(公告)日：2017-07-19
申请号：EP15152513.6
申请日：2015-01-26
申请人： IMEC VZW , Universiteit Gent
发明人： Chen, Hongtao , Van Campenhout, Joris , Roelkens, Günther
IPC分类号： H01L31/107 , H01L31/18
CPC分类号： H01L31/107 , G02B6/42 , H01L31/02327 , H01L31/028 , H01L31/03529 , H01L31/105 , H01L31/1808 , Y02E10/50

3. 发明公开

EP3091381A1 METHOD FOR REALIZING HETEROGENEOUS III-V SILICON PHOTONIC INTEGRATED CIRCUITS 有权
标题翻译： VERFAHREN ZUR HERSTELLUNG PHOTONISCHER INTEGRIERTER SCHALTUNGEN MIT异构体III-V-硅
公开(公告)号：EP3091381A1
公开(公告)日：2016-11-09
申请号：EP15166687.2
申请日：2015-05-07
申请人： IMEC VZW , Universiteit Gent
发明人： Keyvaninia, Shahram , Roelkens, Günther , Van Thourhout, Dries
IPC分类号： G02B6/12 , G02B6/122 , H01L31/103 , H01S5/02 , G02F1/025
CPC分类号： G02B6/12002 , G02B6/12 , G02B6/12004 , G02B6/1228 , G02B6/14 , G02B6/34 , G02B2006/12061 , G02B2006/12078 , G02B2006/12107 , G02B2006/12121 , G02B2006/12123 , G02B2006/12142 , G02F1/01708 , H01L31/1035 , H01S5/0215 , H01S5/0218
摘要： A method of producing a heterogeneous photonic integrated circuit is described. The method comprising integrating at least one III-V hybrid device on a source substrate having at least a top silicon or Si/SiN layer, and transferring by transfer-printing or by flip-chip bonding the III-V hybrid device and at least part of the top silicon or Si/SiN layer of the source substrate to a semiconductor-on-insulator or dielectric-on-insulator host substrate.
摘要翻译：描述了一种生产异质光子集成电路的方法。该方法包括将至少一个III-V混合器件集成在具有至少顶部硅或Si / SiN层的源极衬底上，并且通过转印或通过倒装芯片将III-V混合器件和至少部分的源极衬底的顶部硅或Si / SiN层到绝缘体上绝缘体或绝缘体上绝缘体上的主衬底上。

4. 发明公开

EP3038167A1 Integrated avalanche germanium photodetector 有权
标题翻译： Integrierter律师事务所
公开(公告)号：EP3038167A1
公开(公告)日：2016-06-29
申请号：EP15152513.6
申请日：2015-01-26
申请人： IMEC VZW , Universiteit Gent
发明人： Chen, Hongtao , Van Campenhout, Joris , Roelkens, Günther
IPC分类号： H01L31/107 , H01L31/18
CPC分类号： H01L31/107 , G02B6/42 , H01L31/02327 , H01L31/028 , H01L31/03529 , H01L31/105 , H01L31/1808 , Y02E10/50
摘要： An integrated avalanche photodetector and a method for fabrication thereof. The integrated avalanche photodetector 100 comprises a Ge body 110 adapted to conduct and optical mode. The Ge body 110 comprises a first p-doped region 120, for the absorption of an optical mode. The first p-doped region 120 extends from a first main surface 111 to a second main surface 112 of the Ge body 110. The Ge body 110 comprises a first n-doped region 130 that extends from the first main surface 111 towards the second main surface 112 of the Ge body 110. An intrinsic region 115 occupies the undoped part of the Ge body 110. A first avalanche junction is formed by the first n-doped region 130 that is located aside the p-doped region 120. The Ge body 110 comprises an incidence surface 310, suitable for receiving an optical mode 300. The incidence surface 310 is perpendicular to the first avalanche junction. A second n-doped Ge region 140 that covers the Ge body 110 and forms a second PN avalanche junction with the first p-doped region 120 at the first main surface 111.
摘要翻译：集成雪崩光电探测器及其制造方法。集成雪崩光电检测器100包括适于导电和光学模式的Ge体110。 Ge体110包括用于吸收光学模式的第一p掺杂区域120。第一p掺杂区域120从Ge体110的第一主表面111延伸到第二主表面112.Ge体110包括从第一主表面111朝向第二主表面111延伸的第一n掺杂区域130 Ge本体110的表面112.本征区115占据Ge体110的未掺杂部分。第一雪崩结由位于p掺杂区120旁边的第一n掺杂区130形成.Ge体 110包括适于接收光学模式300的入射表面310.入射表面310垂直于第一雪崩结。覆盖Ge体110并与第一主表面111处的第一p掺杂区域120形成第二PN雪崩结的第二n掺杂Ge区域140。

5. 发明公开

EP2386890A1 Transparent photonic integrated circuit 审中-公开
标题翻译：透明光子学整体
公开(公告)号：EP2386890A1
公开(公告)日：2011-11-16
申请号：EP10177399.2
申请日：2010-09-17
申请人： IMEC , Universiteit Gent
发明人： Vermeulen, Diedrik , Roelkens, Günther
IPC分类号： G02B6/42 , H01S5/026
CPC分类号： G02B6/124 , G02B6/12004 , G02B6/34 , G02B6/4214 , G02B6/4246 , H01S5/02248 , H01S5/18361
摘要： A photonic structure for processing radiation is described. The photonic structure comprises at least a first optical component for detecting radiation of a first wavelength range received from an external radiation guide, e.g. an optical fiber, or generating and directing radiation of a first wavelength range to an external radiation guide, e.g. an optical fiber. The optical component thereby is substantially transparent for radiation of a second wavelength range, different from the first wavelength range. The photonic structure furthermore being configured for coupling radiation of said second wavelength range through said optical component into or out of the photonic structure.
摘要翻译：描述了用于处理辐射的光子结构。光子结构包括至少第一光学部件，用于检测从外部辐射引导件接收的第一波长范围的辐射，例如，或者将第一波长范围的辐射产生并引导到外部辐射引导件，例如，光纤。因此，对于与第一波长范围不同的第二波长范围的辐射，光学部件基本上是透明的。光子结构还被配置用于将所述第二波长范围的辐射通过所述光学部件耦合到或离开光子结构。

6. 发明授权

EP2386891B1 Transparent photonic integrated circuit 有权
标题翻译：透明光子集成电路
公开(公告)号：EP2386891B1
公开(公告)日：2016-09-14
申请号：EP11165875.3
申请日：2011-05-12
申请人： IMEC , Universiteit Gent
发明人： Vermeulen, Diedrik , Roelkens, Günther
IPC分类号： G02B6/42 , H01S5/026 , G02B6/12 , G02B6/34 , G02B6/124
CPC分类号： G02B6/124 , G02B6/12004 , G02B6/34 , G02B6/4214 , G02B6/4246 , H01S5/02248 , H01S5/18361

7. 发明公开

EP2544319A1 Laser source for photonic integrated devices 有权转让
标题翻译：用于集成光子器件的激光源
公开(公告)号：EP2544319A1
公开(公告)日：2013-01-09
申请号：EP11290317.4
申请日：2011-07-08
申请人： Alcatel Lucent , Thales S.A. , IMEC , Universiteit Gent
发明人： Lamponi, Marco , Alcatel Lucent , Poingt, Francis , Alcatel Lucent , Duan, Guang-Hua , Alcatel Lucent , De Valicourt, Guilhem , Alcatel Lucent , Keyvaninia, Shahram , Roelkens, Günther , Van Thourhout, Dries
IPC分类号： H01S5/10 , H01S5/022
CPC分类号： H01S5/1032 , H01S5/1014 , H01S5/1064
摘要： The present invention relates to a laser source, and more especially a laser source for photonic integrated devices. Its object is a laser source of the III-V type bonded onto a SOI type material (8) that is substantially not sensitive to the bonding quality, that has good thermal behaviour and that does not require deep etching of the III-V waveguide. According to the invention, this laser source comprises one central waveguide (8) formed in an etched III-V die and coupled to two end waveguides formed in a SOI -type die, these dies being bonded together, and is characterized in that it comprises a shallow ridge structure (7) for the III-V straight waveguide region, and a deep ridge structure for the tapered region (20A,20B) for efficient mode coupling from III-V to SOI waveguides.

8. 发明公开

EP2000836A1 Method and system for a grating multiplexer with optical waveguide coupling 审中-公开
标题翻译： Verfahren und Systemfürein Gitter-Multiplexer mit optischer Wellenleiterkopplung
公开(公告)号：EP2000836A1
公开(公告)日：2008-12-10
申请号：EP07075449.4
申请日：2007-06-07
申请人： Interuniversitair Microelektronica Centrum , Universiteit Gent , Genexis B.V.
发明人： Roelkens, Günther , Van Thourhout, Dries , Baets, Roeland , Van Den Hoven, Gerard Nicolaas
IPC分类号： G02B6/124 , G02B6/126 , G02B6/30 , G02B6/34 , H04B10/24
CPC分类号： G02B6/29317 , G02B6/12007 , G02B6/126 , G02B6/30 , G02B6/34 , G02B6/4213 , G02B6/4215
摘要： An optical device for optically multiplexing or demultiplexing light of different predetermined wavelengths is provided, the optical device comprising at least one first waveguide (11) and at least one second waveguide (12) formed on a substrate (10), wherein the at least one first waveguide and the at least one second waveguide intersect at an intersection, comprising a diffraction grating structure (13) formed at the intersection. There exists a first wavelength or wavelength band traveling within the first waveguide (11) exciting the grating structure and being diffracted at an angle corresponding to an outcoupling direction and there exists a second wavelength or wavelength band, different from the first wavelength or wavelength band, traveling within the second waveguide (12) exciting the grating structure and being diffracted at an angle corresponding to the same outcoupling direction. The two radiation beams comprising radiation of two different wavelengths or wavelength bands are spatially separated into the optical waveguides (11 and 12) or combined into a single outcoupling direction, e.g. into a single optical coupling element, e.g. a single optical fiber (21). An optical device may be used in local access communications such as fiber to the home, office or curb applications.
摘要翻译：提供了用于光学地多路复用或解复用不同预定波长的光的光学装置，所述光学装置包括形成在基底（10）上的至少一个第一波导（11）和至少一个第二波导（12），其中所述至少一个第一波导和所述至少一个第二波导在交叉点处相交，包括在交叉点处形成的衍射光栅结构（13）。存在在第一波导（11）内行进的第一波长或波长带，激发光栅结构并以与出耦合方向对应的角度衍射，并且存在不同于第一波长或波长带的第二波长或波长带，在激活光栅结构的第二波导（12）内行进并以对应于相同外耦合方向的角度被衍射。包括两个不同波长或波长带的辐射的两个辐射束在空间上分离成光波导（11和12）或组合成单个外耦合方向，例如，进入单个光耦合元件，例如。单个光纤（21）。光学设备可以用于本地接入通信，例如光纤到家庭，办公室或路边应用。

9. 发明授权

EP2214042B1 Method of producing a photonic device and corresponding photonic device 有权
标题翻译：一种制备光子器件和相应的光子器件过程
公开(公告)号：EP2214042B1
公开(公告)日：2015-03-11
申请号：EP09290077.8
申请日：2009-02-02
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives , Centre National de la Recherche Scientifique , IMEC , Universiteit Gent
发明人： Grenouillet, Laurent , Fedeli, Jean-Marc , Liu, Liu , Orobtchouk, Regis , Regreny, Philippe , Roelkens, Günther , Rojo-Romeo, Pedro , Van Thourhout, Dries
IPC分类号： G02B6/43 , G02B6/13 , G02B6/136
CPC分类号： G02B6/43 , G02B6/13 , G02B6/136

10. 发明授权

EP2544319B1 Laser source for photonic integrated devices 有权转让
标题翻译：激光激光光电子激光器（Vorrichtungen）
公开(公告)号：EP2544319B1
公开(公告)日：2015-03-25
申请号：EP11290317.4
申请日：2011-07-08
申请人： ALCATEL LUCENT , Thales S.A. , IMEC , Universiteit Gent
发明人： Lamponi, Marco , Poingt, Francis , Duan, Guang-Hua , De Valicourt, Guilhem , Keyvaninia, Shahram , Roelkens, Günther , Van Thourhout, Dries
IPC分类号： H01S5/10 , H01S5/022
CPC分类号： H01S5/1032 , H01S5/1014 , H01S5/1064

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