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1. 发明公开

EP2783396A1 METHOD FOR FORMING METAL SILICIDE LAYERS 失效
标题翻译： VERFAHREN ZUR FORMUNG VON金属硅 - SCHICHTEN
公开(公告)号：EP2783396A1
公开(公告)日：2014-10-01
申请号：EP12797813.8
申请日：2012-11-23
申请人： IMEC , Katholieke Universiteit Leuven , Excico Group NV
发明人： TOUS, Loic , ALEMAN, Monica , JOHN, Joachim , EMERAUD, Thierry
IPC分类号： H01L31/0224 , H01L31/18
CPC分类号： H01L31/02366 , H01L21/268 , H01L21/32053 , H01L31/02168 , H01L31/022425 , H01L31/1864 , Y02E10/50 , Y02P70/521
摘要： The present invention is related to a method for forming a metal silicide layer on a textured silicon substrate surface, the method comprising: providing a metal layer on a textured silicon substrate; and performing a pulsed laser annealing step providing at least one UV laser pulse with a laser fluence in the range between 0.1 J/cm2 and 1.5 J/cm2 and with a laser pulse duration in the range between 1 ns and 10 ms, thereby converting at least part of the metal layer into a metal silicide layer. In addition, the present invention is related to the use of such method in a process for fabricating a photovoltaic cell, wherein the dielectric layer is a surface passivation layer, or wherein the dielectric layer is an antireflection coating.
摘要翻译：本发明涉及一种在纹理硅衬底表面上形成金属硅化物层的方法。该方法包括在织构化的硅衬底上提供金属层并执行脉冲激光退火步骤，其提供激光注量在0.1J / cm 2和1.5J / cm 2之间的激光注量的至少一个UV激光脉冲，并且激光脉冲持续时间范围在1 ns和10 ms之间。然后，该方法包括将金属层的至少一部分转化为金属硅化物层。此外，本发明涉及在制造光伏电池的方法中使用这种方法，其中电介质层是表面钝化层，或者其中电介质层是抗反射涂层。

2. 发明授权

EP2783396B1 METHOD FOR FORMING METAL SILICIDE LAYERS 失效
标题翻译：法形成金属硅化物层的
公开(公告)号：EP2783396B1
公开(公告)日：2017-01-11
申请号：EP12797813.8
申请日：2012-11-23
申请人： IMEC , Katholieke Universiteit Leuven , Excico Group NV
发明人： TOUS, Loic , ALEMAN, Monica , JOHN, Joachim , EMERAUD, Thierry
IPC分类号： H01L31/0224 , H01L31/18
CPC分类号： H01L31/02366 , H01L21/268 , H01L21/32053 , H01L31/02168 , H01L31/022425 , H01L31/1864 , Y02E10/50 , Y02P70/521

3. 发明授权

EP2087511B1 SURFACE TREATMENT AND PASSIVATION OF AIGAN/GAN HEMT 有权
标题翻译：表面处理和钝化的AlGaN / GaN HEMT
公开(公告)号：EP2087511B1
公开(公告)日：2015-03-18
申请号：EP07846781.8
申请日：2007-11-20
申请人： IMEC , Katholieke Universiteit Leuven
发明人： LORENZ, Anne , DERLUYN, Joff , JOHN, Joachim
IPC分类号： H01L21/335
CPC分类号： H01L29/66462 , H01L29/2003 , H01L29/7787 , Y10S438/958

4. 发明公开

EP2534698A1 METHOD FOR SINGLE SIDE TEXTURING 审中-公开
标题翻译：方法片面纹理
公开(公告)号：EP2534698A1
公开(公告)日：2012-12-19
申请号：EP11702997.5
申请日：2011-02-11
申请人： IMEC , Katholieke Universiteit Leuven K.U. Leuven R&D
发明人： PRAJAPATI, Victor , JOHN, Joachim
IPC分类号： H01L31/0236 , H01L21/02
CPC分类号： H01L31/0236 , H01L31/02363 , Y02E10/50
摘要： A method for single side texturing of a crystalline semiconductor substrate (10) comprises: providing a substrate (10), for example a semiconductor substrate, comprising a first surface (12) and a second surface (14) opposite to one another with respect to the substrate (10); providing a masking layer (21) with a random pattern on the first surface (12) of the substrate (10); and etching the substrate (10) in a polishing solution, thereby texturing the first surface (12) of the substrate (10) and polishing the second surface (14) in a single wet etching step.

5. 发明授权

EP2534698B1 METHOD FOR SINGLE SIDE TEXTURING 有权
公开(公告)号：EP2534698B1
公开(公告)日：2019-08-28
申请号：EP11702997.5
申请日：2011-02-11
申请人： IMEC VZW , Katholieke Universiteit Leuven K.U. Leuven R&D
发明人： PRAJAPATI, Victor , JOHN, Joachim
IPC分类号： H01L31/0236 , H01L21/02

6. 发明公开

EP2087511A1 SURFACE TREATMENT AND PASSIVATION OF AIGAN/GAN HEMT 有权
标题翻译：表面处理和钝化的AlGaN / GaN HEMT
公开(公告)号：EP2087511A1
公开(公告)日：2009-08-12
申请号：EP07846781.8
申请日：2007-11-20
申请人： IMEC , Katholieke Universiteit Leuven
发明人： LORENZ, Anne , DERLUYN, Joff , JOHN, Joachim
IPC分类号： H01L21/335
CPC分类号： H01L29/66462 , H01L29/2003 , H01L29/7787 , Y10S438/958
摘要： In the preferred embodiments, a method to reduce gate leakage and dispersion of group Ill-nitride field effect devices covered with a thin in-situ SiN layer is provided. This can be obtained by introducing a second passivation layer on top of the in-situ SiN-layer, in combination with cleaning of the in-situ SiN before gate deposition and before deposition of the second passivation layer.

7. 发明授权

EP3139416B1 TEXTURING MONOCRYSTALLINE SILICON SUBSTRATES 有权
公开(公告)号：EP3139416B1
公开(公告)日：2020-10-28
申请号：EP15184061.8
申请日：2015-09-07
申请人： IMEC VZW
发明人： JOHN, Joachim , HASLINGER, Michael
IPC分类号： H01L31/0236 , H01L31/18 , H01L21/02 , H01L21/306

8. 发明公开

EP3139416A1 TEXTURING MONOCRYSTALLINE SILICON SUBSTRATES 有权
标题翻译： TEXTURIERUNG VON MONOKRISTALLINEN SILICIUMSUBSTRATEN
公开(公告)号：EP3139416A1
公开(公告)日：2017-03-08
申请号：EP15184061.8
申请日：2015-09-07
申请人： IMEC VZW
发明人： JOHN, Joachim , HASLINGER, Michael
IPC分类号： H01L31/0236 , H01L31/18 , H01L21/02 , H01L21/306
摘要： A method for preparing a monocrystalline silicon substrate surface for a subsequent texturing step, the method comprising:
a. removing contaminants from the surface by contacting the surface with a cleaning solution;
b. etching the pre-cleaned surface with an aqueous solution comprising from 12 to 19% by weight, of KOH and/or NaOH;
c. rinsing the etched surface with an aqueous medium at pH from 7 to 10; and
d. contacting the rinsed etched surface with ozonated deionized water at pH from 2 to 4.5, thereby converting the rinsed etched surface into a prepared surface.
A method for texturing the prepared surface is also provided.
摘要翻译：一种制备用于随后的纹理化步骤的单晶硅衬底表面的方法，所述方法包括：a。通过使表面与清洁溶液接触来从表面去除污染物; 湾用包含12至19重量％的KOH和/或NaOH的水溶液蚀刻预清洁的表面; C。用pH为7至10的水性介质漂洗蚀刻的表面; 和d。使经冲洗的蚀刻表面与pH为2至4.5的臭氧化去离子水接触，从而将经冲洗的蚀刻表面转化为制备的表面。还提供了用于纹理化所制备的表面的方法。

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