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    • 1. 发明公开
    • Storage subsystem and control method thereof
    • 说话者系统和动物园Steuerverfahren
    • EP2088508A2
    • 2009-08-12
    • EP08253957.8
    • 2008-12-10
    • Hitachi Ltd.
    • Inoue, TetsuyaSuzuki, HiroshiKoga, Tsutomu
    • G06F11/20
    • G06F11/201G06F11/2089
    • Provided is a storage subsystem capable of inhibiting the deterioration in system performance to a minimum while improving reliability and availability. This storage subsystem includes a first controller for controlling multiple drive units connected via multiple first switch devices, and a second controller for controlling the multiple drive units connected via multiple second switch devices associated with the multiple first switch devices. This storage subsystem also includes a connection path that mutually connects the multiple first switch devices and the corresponding multiple second switch devices. When the storage [sub]system detects the occurrence of a failure, it identifies the fault site in the connection path, and changes the connection configuration of the switch device so as to circumvent the fault site.
    • 提供了一种能够在提高可靠性和可用性的同时将系统性能的恶化最小化的存储子系统。 该存储子系统包括用于控制经由多个第一开关装置连接的多个驱动单元的第一控制器,以及用于控制通过与多个第一开关装置相关联的多个第二开关装置连接的多个驱动单元的第二控制器。 该存储子系统还包括连接多个第一交换设备和相应的多个第二交换设备的连接路径。 当存储[sub]系统检测到故障发生时,它识别连接路径中的故障现场,并更改交换设备的连接配置,以规避故障现场。
    • 7. 发明公开
    • Imides and process for producing the same
    • 其制造方法及其制造方法
    • EP0028419A3
    • 1981-05-27
    • EP80106787
    • 1980-11-04
    • Hitachi, Ltd.
    • Nishikawa, AkioSuzuki, HiroshiKohkame, Hisashi
    • C08G73/12C08L79/08
    • C08G73/12
    • An imide having the structural units of the formulae (I) and (II), or (I), (II) and (IV),
      is soluble excellently in a low-boiling solvent and can give alone or together with one or more amides, epoxy compounds, unsaturated polyesters, diallyl phthalates, or the like, heat resistant polymers. The imide can be produced by, e.g., reacting tetrahydrophthalic anhydride with aniline resin with or without followed by dehydration and ring closure, reacting the resulting reaction product with an ethylenically unsaturated carboxylic acid anhydride such as maleic anhydride, followed by dehydration and ring closure.
    • 具有式(I)和(II)或(I),(II)和(IV)的结构单元的酰亚胺,可在低沸点溶剂中优异地溶解,并且可以单独或与一种 或多种酰胺,环氧化合物,不饱和聚酯,邻苯二甲酸二烯丙酯等,耐热聚合物。 酰亚胺可以通过例如使四氢邻苯二甲酸酐与苯胺树脂反应,然后进行脱水和闭环,然后使所得反应产物与烯键式不饱和羧酸酐如马来酸酐反应,随后脱水和闭环。
    • 8. 发明公开
    • Imides and process for producing the same
    • Imide und Verfahren zu ihrer Herstellung。
    • EP0028419A2
    • 1981-05-13
    • EP80106787.7
    • 1980-11-04
    • Hitachi, Ltd.
    • Nishikawa, AkioSuzuki, HiroshiKohkame, Hisashi
    • C08G73/12C08L79/08
    • C08G73/12
    • An imide having the structural units of the formulae (I) and (II), or (I), (II) and (IV),

      is soluble excellently in a low-boiling solvent and can give alone or together with one or more amides, epoxy compounds, unsaturated polyesters, diallyl phthalates, or the like, heat resistant polymers. The imide can be produced by, e.g., reacting tetrahydrophthalic anhydride with aniline resin with or without followed by dehydration and ring closure, reacting the resulting reaction product with an ethylenically unsaturated carboxylic acid anhydride such as maleic anhydride, followed by dehydration and ring closure.
    • 具有式(I)和(II)或(I),(II)和(IV)的结构单元的酰亚胺,可在低沸点溶剂中优异地溶解,并且可以单独或与一种 或多种酰胺,环氧化合物,不饱和聚酯,邻苯二甲酸二烯丙酯等,耐热聚合物。 酰亚胺可以通过例如使四氢邻苯二甲酸酐与苯胺树脂反应,然后进行脱水和闭环,然后使所得反应产物与烯键式不饱和羧酸酐如马来酸酐反应,随后脱水和闭环。
    • 9. 发明公开
    • Semiconductor device and electric power conversion system using the same
    • 半导体器件和使用其的电力转换系统
    • EP2549539A1
    • 2013-01-23
    • EP12177308.9
    • 2012-07-20
    • Hitachi Ltd.
    • Watanabe, SoShiraishi, MasakiSuzuki, HiroshiMori, Mutsuhiro
    • H01L29/739H01L29/66H01L29/06
    • H01L29/7397H01L29/0696H01L29/407H01L29/66348
    • A semiconductor device includes: a first semiconductor layer (100) of a first conductivity type; a second semiconductor layer (113) of a second conductivity type on the first semiconductor layer (100); trenches (103) in the first semiconductor layer (100); a semiconductor protruding part (104) on the first semiconductor layer (100); a third semiconductor layer (101) on the semiconductor protruding part (104); a fourth semiconductor layer (102) on the third semiconductor layer (101); a gate insulating layer (105) disposed along the trench (103); a first interlayer insulating layer (107) disposed along the trench (103); a first conductive layer (106) facing to the fourth semiconductor layer (102); a second conductive layer (108) on the first interlayer insulating layer (107) ; a second interlayer insulating layer (109) covering the second conductive layer (108); a third conductive layer (111) on the third semiconductor layer (101) and fourth semiconductor layer (102); a contacting part (110) connecting the third conductive layer (111) and third semiconductor layer (101); and a fourth conductive layer (114) formed on the second semiconductor layer (113).
    • 一种半导体器件包括:第一导电类型的第一半导体层(100) 在第一半导体层(100)上的第二导电类型的第二半导体层(113); 第一半导体层(100)中的沟槽(103); 在第一半导体层(100)上的半导体凸出部分(104); 在所述半导体凸出部分(104)上的第三半导体层(101); 在第三半导体层(101)上的第四半导体层(102); 沿着沟槽(103)设置的栅极绝缘层(105); 沿着沟槽(103)设置的第一层间绝缘层(107); 面向所述第四半导体层(102)的第一导电层(106); 在第一层间绝缘层107上的第二导电层108; 覆盖第二导电层(108)的第二层间绝缘层(109); 在第三半导体层(101)和第四半导体层(102)上的第三导电层(111); 连接第三导电层(111)和第三半导体层(101)的接触部(110); 和形成在第二半导体层(113)上的第四导电层(114)。