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1. 发明授权

EP3174718B1 PRE-CHARGE LINE ROUTED OVER PRE-CHARGE TRANSISTOR 有权转让
公开(公告)号：EP3174718B1
公开(公告)日：2019-03-06
申请号：EP14899073.2
申请日：2014-07-30
申请人： Hewlett-Packard Development Company, L.P.
发明人： NG, Boon Bing , WIN, Thida Ma , GE, Ning , RANDO, Jose Jehrome
IPC分类号： B41J2/14 , B41J2/175 , B41J2/045

2. 发明授权

EP3039712B1 SEMICONDUCTOR DEVICE AND METHOD OF MAKING SAME 有权转让
公开(公告)号：EP3039712B1
公开(公告)日：2020-08-05
申请号：EP13892776.9
申请日：2013-08-30
申请人： Hewlett-Packard Development Company, L.P.
发明人： GE, Ning , CHIA, Leong Yap , LEE, Pin Chin , RANDO, Jose Jehrome
IPC分类号： H01L21/336 , H01L29/66 , H01L21/28 , H01L21/8234 , H01L29/78 , H01L29/08

3. 发明公开

EP3039712A1 SEMICONDUCTOR DEVICE AND METHOD OF MAKING SAME 有权转让
标题翻译：半导体器件及其制造方法
公开(公告)号：EP3039712A1
公开(公告)日：2016-07-06
申请号：EP13892776.9
申请日：2013-08-30
申请人： Hewlett-Packard Development Company, L.P.
发明人： GE, Ning , CHIA, Leong Yap , LEE, Pin Chin , RANDO, Jose Jehrome
IPC分类号： H01L21/336
CPC分类号： H01L29/66575 , H01L21/28035 , H01L21/28123 , H01L21/823437 , H01L21/823481 , H01L29/0847 , H01L29/66659 , H01L29/78 , H05K2203/013
摘要： A semiconductor device and method of forming the same is described. In an example, a polysilicon layer is deposited on a substrate having at least one polysilicon ring. The substrate is doped using the polysilicon layer as a mask to form doped regions in the substrate. A dielectric layer is deposited over the polysilicon layer and the substrate. The dielectric layer is etched to expose portions of the polysilicon layer. A metal layer is deposited on the dielectric layer. The metal layer, the dielectric layer, and the exposed portions of the polysilicon layer are etched such that at least a portion of each polysilicon ring is removed.
摘要翻译：描述半导体器件及其形成方法。在一个示例中，多晶硅层沉积在具有至少一个多晶硅环的衬底上。使用多晶硅层作为掩模来掺杂衬底以在衬底中形成掺杂区域。介电层沉积在多晶硅层和衬底上。蚀刻电介质层以暴露多晶硅层的部分。金属层沉积在介电层上。蚀刻金属层，电介质层和多晶硅层的暴露部分，使得每个多晶硅环的至少一部分被去除。

4. 发明授权

EP3175459B1 SPLIT MEMORY BANK 有权转让
公开(公告)号：EP3175459B1
公开(公告)日：2020-02-12
申请号：EP14898561.7
申请日：2014-07-30
申请人： Hewlett-Packard Development Company, L.P.
发明人： NG, Boon Bing , WIN, Thida Ma , GE, Ning , RANDO, Jose Jehrome
IPC分类号： G11C16/02 , G11C16/06 , G11C8/12 , G11C19/00 , G11C16/08 , B41J2/175 , G11C19/28

5. 发明公开

EP3175459A1 SPLIT MEMORY BANK 有权转让
标题翻译：分裂内存银行
公开(公告)号：EP3175459A1
公开(公告)日：2017-06-07
申请号：EP14898561.7
申请日：2014-07-30
申请人： Hewlett-Packard Development Company, L.P.
发明人： NG, Boon Bing , WIN, Thida Ma , GE, Ning , RANDO, Jose Jehrome
IPC分类号： G11C16/02 , G11C16/06
摘要： A split memory bank may comprise a number of memory matrices forming a memory bank and a shift register in which the shift register physically separates the matrices. An integrated circuit may comprise a number of shift registers and a plurality of memory matrices forming a memory bank in which the matrices are spatially separated by the shift register. An integrated printhead may comprise a number of memory banks each comprising a plurality of memory matrices and a number of shift registers in which each shift register spatially separates a number of the matrices.
摘要翻译：分离存储体可以包括形成存储体的多个存储矩阵和移位寄存器，其中移位寄存器物理分离矩阵。集成电路可以包括形成存储体的多个移位寄存器和多个存储器矩阵，其中矩阵在空间上由移位寄存器分开。集成打印头可以包括多个存储体，每个存储体包括多个存储器矩阵和多个移位寄存器，其中每个移位寄存器在空间上分隔多个矩阵。

6. 发明公开

EP3174718A1 PRE-CHARGE LINE ROUTED OVER PRE-CHARGE TRANSISTOR 有权转让
标题翻译：预充电晶体管通过预充电晶体管引导
公开(公告)号：EP3174718A1
公开(公告)日：2017-06-07
申请号：EP14899073.2
申请日：2014-07-30
申请人： Hewlett-Packard Development Company, L.P.
发明人： NG, Boon Bing , WIN, Thida Ma , GE, Ning , RANDO, Jose Jehrome
IPC分类号： B41J2/14 , B41J2/175
CPC分类号： B41J2/0455 , B41J2/04541 , B41J2/0458 , B41J2/04581
摘要： A nozzle firing cell may comprise a firing transistor and a pre-charge transistor having a source and drain coupled between a pre-charge line and a gate of the firing transistor wherein the pre-charge line is routed over the gate of the pre-charge transistor. A fluid ejection device may comprise a circuit comprising a nozzle firing ceil, the nozzle firing cell comprising a firing transistor and a pre-charge transistor having a source and drain coupled between a pre-charge Sine and a gate of the firing transistor in which the pre-charge line is routed over the gate of the pre-charge transistor. A circuit may comprise a number of firing transistors and a number of pre-charge transistors each having a source and drain coupled between a pre-charge line and a gate of one of the firing transistors in which the pre-charge line is routed over each of the gates of the pre-charge transistors.
摘要翻译：喷嘴发射单元可以包括发射晶体管和具有耦合在发射晶体管的预充电线和栅极之间的源极和漏极的预充电晶体管，其中预充电线路在预充电的栅极上方晶体管。流体喷射装置可以包括包含喷嘴烧制电池的电路，喷嘴发射单元包括发射晶体管和预充电晶体管，所述预充电晶体管具有耦合在发射晶体管的预充电正弦和栅极之间的源极和漏极，预充电线在预充电晶体管的栅极上布线。电路可以包括多个发射晶体管和多个预充电晶体管，每个预充电晶体管具有在预充电线和发射晶体管中的一个发射晶体管的栅极之间的源极和漏极耦合，其中预充电线路被布置在该预充电线和栅极之间在预充电晶体管的每个栅极上。

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