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    • 1. 发明公开
    • Variable delay line
    • 可变延迟线
    • EP0138369A3
    • 1987-08-19
    • EP84306132
    • 1984-09-07
    • HAZELTINE CORPORATION
    • Vasile, Carmine F.
    • H01P09/00
    • H01P9/00
    • A delay line circuit (20) provides variable delay and phase shift to electric signals propagating along the delay circuit. The circuit is formed of a set of varactors constructed either as varactor chips (42) or as a set of mesas (84) upstanding from a gallium arsenide substrate (86). A ground plane (34) interconnects bottom terminals of the varactor chips while a strip line conductor (46, 96) interconnects top terminals of the varactor chips. In the case of the mesa configuration, a metallized layer (88) covers the regions between the mesas without contacting the base portions of the mesas. The strip line conductor makes contact with the respective mesas via a set of metallic posts (92) upstanding from respective ones of the mesas. Dielectric material (air space) may be inserted between the strip line conductor and the metallic layer to position the strip line conductor relative to the metallic layer, which layer serves as a ground plane in a transmission line comprising the strip line conductor.
    • 2. 发明公开
    • Multifunction floating fet circuit
    • 电路中具有多种功能的浮动安排FET。
    • EP0221632A1
    • 1987-05-13
    • EP86305973.9
    • 1986-08-01
    • HAZELTINE CORPORATION
    • Vasile, Carmine F.
    • H03F3/16H03F3/26H03C1/54
    • H03F3/265
    • A transistor circuit is provided with a symmetrical floating configuration for attaining multi-­function operation of a transistor (20) having symmetrical source and drain characteristics, preferably a GaAs MESFET. The circuit includes a balun (30) which may be configured as a transformer, a differential amplifier, or a magic-tee waveguide depending on the frequency of signals to be processed by the circuit. Balanced terminals of the balun may be directly or capacitively coupled to source and drain terminals of the transistor (20). Tuning circuits (70, 72) are employed for applying signals having different frequencies to the transistor and for extracting intermodulation products generated by the transistor in response to the signals at the different frequencies. With the direct connection between the balun and the transistor, alternating voltages (via E, F, G) may be impressed between the terminals of the transistor to alternate source and drain regions of the transistor. Functions of amplification, modulation, bipolar attenuation, four-­quadrant multiplication and correlation, power frequency tripling, and mixing are obtainable. The transistor may be replaced with a pair of transistors connected in series or in antiparallel connection.
    • 4. 发明公开
    • Variable delay line
    • 可变延迟线。
    • EP0138369A2
    • 1985-04-24
    • EP84306132.6
    • 1984-09-07
    • HAZELTINE CORPORATION
    • Vasile, Carmine F.
    • H01P9/00
    • H01P9/00
    • A delay line circuit (20) provides variable delay and phase shift to electric signals propagating along the delay circuit. The circuit is formed of a set of varactors constructed either as varactor chips (42) or as a set of mesas (84) upstanding from a gallium arsenide substrate (86). A ground plane (34) interconnects bottom terminals of the varactor chips while a strip line conductor (46, 96) interconnects top terminals of the varactor chips. In the case of the mesa configuration, a metallized layer (88) covers the regions between the mesas without contacting the base portions of the mesas. The strip line conductor makes contact with the respective mesas via a set of metallic posts (92) upstanding from respective ones of the mesas. Dielectric material (air space) may be inserted between the strip line conductor and the metallic layer to position the strip line conductor relative to the metallic layer, which layer serves as a ground plane in a transmission line comprising the strip line conductor.