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1. 发明公开

EP3236484A1 EQUIPOTENTIAL SYSTEM FOR HVDC CONVERTER 审中-公开
标题翻译：高压直流输电换流器的等电位系统
公开(公告)号：EP3236484A1
公开(公告)日：2017-10-25
申请号：EP17166352.9
申请日：2017-04-12
申请人： General Electric Technology GmbH
发明人： GREGOIRE, Jerome
IPC分类号： H01H31/00
CPC分类号： H01H31/003
摘要： A high voltage converter, comprises a plurality of modules (18a-c) and a plurality of mechanical switches (24, 26). Each switch is connected between two of the modules (18a-c) to switchably make an electrical connection between the two of said modules (18a-c). A first additional mechanical switch (28a) is provided, connected to one of said modules (18a) to switchably make an electrical connection between said module (18a) and an earth point.
摘要翻译：高电压转换器包括多个模块（18a-c）和多个机械开关（24,26）。每个开关连接在两个模块（18a-c）之间，以可切换地在两个所述模块（18a-c）之间进行电连接。提供第一附加机械开关（28a），其连接到所述模块（18a）中的一个，以可开关地在所述模块（18a）和接地点之间形成电连接。

2. 发明公开

EP3068008A1 Improvements in or relating to hvdc power converters 有权
标题翻译： hvdc电源转换器或与之相关的改进
公开(公告)号：EP3068008A1
公开(公告)日：2016-09-14
申请号：EP15275062.6
申请日：2015-03-12
申请人： General Electric Technology GmbH
发明人： GREGOIRE, Jerome , CHIVITE-ZABALZA, Francisco Javier , OATES, Colin Donald Murray , MORENO MUNOZ, Francisco Jose
IPC分类号： H02J3/36 , H02M1/32 , H02M7/483
CPC分类号： H02M1/32 , H02J3/36 , H02M7/483 , H02M2007/4835 , Y02E60/60
摘要： An electrical assembly (10; 60; 70), for use in a limb portion (12) of a converter limb (14) within a HVDC power converter (16), comprises at least one switching assembly (26; 62; 72) that includes one or more semiconductor switches (28). The or each semiconductor switch (28) is selectively switchable between conducting and non-conducting conditions. The or each semiconductor switch (28) in the conducting condition allowing current to flow through the said semiconductor switch (28) in a first forward direction (F) and thereby through the said switching assembly (26; 62; 72) in the same forward direction (F). The or each switching assembly (26; 62; 72) has a bypass protection circuit (50; 80; 100) connected in parallel therewith. The or each bypass protection circuit (50; 80; 100) includes a first semiconductor protection element (52) that is selectively switchable between conducting and non-conducting conditions. The or each said first semiconductor protection element (52) while in the conducting condition provides a first current-conducting path (56) in the forward direction (F) to divert current flowing in the forward direction (F) through the switching assembly (26; 62; 72) away from the switching assembly (26; 62; 72).
摘要翻译：一种用于HVDC功率转换器（16）内的转换器臂（14）的肢体部分（12）中的电组件（10; 60; 70）包括至少一个切换组件（26; 62; 72），所述切换组件包括一个或多个半导体开关（28）。该或每个半导体开关（28）可选择性地在导通状态和非导通状态之间切换。处于导通状态的该半导体开关或每个半导体开关（28）允许电流以第一向前方向（F）流过所述半导体开关（28），并由此通过同一前进方向上的所述开关组件（26; 62; 72）方向（F）。该或每个开关组件（26; 62; 72）具有与其并联的旁路保护电路（50; 80; 100）。该或每个旁路保护电路（50; 80; 100）包括可在导通状态与非导通状态之间选择性切换的第一半导体保护元件（52）。所述第一半导体保护元件或每个所述第一半导体保护元件（52）在处于导电状态时在正向方向（F）上提供第一电流传导路径（56），以将沿正向方向（F）流动的电流转移通过开关组件（26 ; 62; 72）远离开关组件（26; 62; 72）。

3. 发明公开

EP3350915A1 A BUSBAR ASSEMBLY WITH A BUS BAR CONDUCTOR COUPLED THERMALLY AND ELECTRICALLY WITH A HEAT TRANSFER LINE 审中-公开
公开(公告)号：EP3350915A1
公开(公告)日：2018-07-25
申请号：EP16766873.0
申请日：2016-09-05
申请人： General Electric Technology GmbH
发明人： GREGOIRE, Jerome
IPC分类号： H02M7/00 , H02G5/10
CPC分类号： H02G5/10 , H02M7/003
摘要： There is disclosed a busbar assembly including a busbar having one or more conductor layers for electrical conduction, and an electrically conductive heat transfer line configured to convey a cooling fluid therethrough, where the heat transfer line is thermally and electrically coupled to a conductor layer of the busbar so that in use there is no voltage difference between the heat transfer line and the respective conductor layer of the busbar.

4. 发明公开

EP3462479A1 SEMICONDUCTOR ASSEMBLY WITH FAULT PROTECTION 有权
公开(公告)号：EP3462479A1
公开(公告)日：2019-04-03
申请号：EP17194408.5
申请日：2017-10-02
申请人： General Electric Technology GmbH
发明人： OUTRAM, John Lewis , GREGOIRE, Jerome
IPC分类号： H01L23/051 , H01L23/62 , H01L25/07 , H03K17/12
摘要： Semiconductor assemblies and apparatus are described. In one example, a semiconductor assembly comprises a first power terminal; a second power terminal; a state change trigger terminal; and a semiconductor device comprising a first terminal and a second terminal. The first power terminal is electrically connected to the first terminal of the semiconductor device and the second power terminal is electrically connected to the second terminal of the semiconductor device. The state change trigger terminal is connected to the semiconductor device and is configured to deliver energy to the semiconductor device to cause a change in state thereof such that a permanent conductive path is formed between the first and second terminals.

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