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1. 发明公开

EP2713379A1 A switching apparatus including gating circuitry for actuating micro-electromechanical system (MEMS) switches 有权
标题翻译：与选通电路的开关装置，用于致动的微型机电系统（MEMS）开关
公开(公告)号：EP2713379A1
公开(公告)日：2014-04-02
申请号：EP13186251.8
申请日：2013-09-26
申请人： General Electric Company
发明人： Claydon, Glenn , Keimel, Christopher Fred , Park, John Norton , Li, Bo
IPC分类号： H01H1/00 , H01H59/00 , B81B3/00
CPC分类号： H01H59/0009
摘要： A switching apparatus (30), as may be configured to actuate stacked MEMS switches, includes a switching circuitry (34) including a MEMS switch (36) having a beam made up of a first movable actuator (17) and a second movable actuator (19) electrically connected by a common connector (20) and arranged to selectively establish an electrical current path through the first and second movable actuators (17 and 19) in response to a gate (22) control signal applied to the gates (22) of the switch to actuate the movable actuators (17). The apparatus (30) further includes a gating circuitry (32) to generate the gate (22) control signal applied to gates (22) of the switch. The gating circuitry (32) includes a driver channel (40) electrically coupled to the common connector (20) and may be adapted to electrically float with respect to a varying beam voltage, and may be electrically referenced between the varying beam voltage and a local electrical ground of the gating circuitry (32).
摘要翻译：的开关装置（30），作为可被配置成致动堆叠MEMS开关，包括：包括具有由第一可动执行器（17）和第二可动致动器的光束（MEMS开关（36）的开关电路（34） 19）通过一个共同的连接器（20电连接），布置成通过响应所述第一和第二活动致动器（17和19）选择性地建立到电流路径的栅极（22）的控制信号与施加于的栅极（22）开关致动可动致动器（17）。的装置（30）还包括一个门电路（32），以产生栅极施加到开关的栅极（22）（22）控制信号。该选通电路（32）包括电连接到公共连接器（20），并且可以angepasst电浮动相对于变化的束电压的驱动器通道（40），并且可以将改变光束电压和本地之间电参考该选通电路的电接地（32）。

2. 发明公开

EP2053017A3 Electrical connection through a substrate to a microelectromechanical devise 有权
标题翻译：在微机电装置通过基板的电连接
公开(公告)号：EP2053017A3
公开(公告)日：2012-03-28
申请号：EP08166698.4
申请日：2008-10-15
申请人： General Electric Company
发明人： Hays, David Cecil , Aimi, Marco Francesco , Keimel, Christopher Fred , Claydon, Glenn Scott , Subramanian, Kanakasabapathi , Boomhower, Oliver Charles
IPC分类号： B81B7/00 , H01H1/00
CPC分类号： B81B7/007 , B81B2207/07 , B81B2207/096 , H01H1/0036
摘要： An electrical through-connection, or via, that passes through a substrate (22) to a bus (28) on a first surface (21) of the substrate (22). The via may be configured with an interlock (46) such that the electrically conductive core (60) of the via is constrained to thermally expand towards the second surface (23), away from the bus (28), thus preventing damage to the bus (28). The interlock (46) may be a local constriction or enlargement of the via near the first surface (21) of the substrate (22). The via may be greater in length along the bus (28) than a unit spacing of beams (30) in a parallel microswitch array (20) actuated in unison along the bus (28). The via may be narrower in width than in length, and may form a trapezoidal geometry that is larger at the second surface (23) of the substrate (22) than at the first surface (21).

3. 发明授权

EP2713379B1 A switching apparatus including gating circuitry for actuating micro-electromechanical system (MEMS) switches 有权
标题翻译：包括用于致动微机电系统（MEMS）开关的选通电路的开关装置
公开(公告)号：EP2713379B1
公开(公告)日：2017-12-20
申请号：EP13186251.8
申请日：2013-09-26
申请人： General Electric Company
发明人： Claydon, Glenn , Keimel, Christopher Fred , Park, John Norton , Li, Bo
IPC分类号： H01H1/00 , H01H59/00 , B81B3/00
CPC分类号： H01H59/0009
摘要： A switching apparatus (30), as may be configured to actuate stacked MEMS switches, includes a switching circuitry (34) including a MEMS switch (36) having a beam made up of a first movable actuator (17) and a second movable actuator (19) electrically connected by a common connector (20) and arranged to selectively establish an electrical current path through the first and second movable actuators (17 and 19) in response to a gate (22) control signal applied to the gates (22) of the switch to actuate the movable actuators (17). The apparatus (30) further includes a gating circuitry (32) to generate the gate (22) control signal applied to gates (22) of the switch. The gating circuitry (32) includes a driver channel (40) electrically coupled to the common connector (20) and may be adapted to electrically float with respect to a varying beam voltage, and may be electrically referenced between the varying beam voltage and a local electrical ground of the gating circuitry (32).

4. 发明授权

EP2073238B1 Mems switch with improved standoff voltage control 有权
标题翻译： Mems开关通过改进的隔离电压控制
公开(公告)号：EP2073238B1
公开(公告)日：2017-11-01
申请号：EP08171425.5
申请日：2008-12-12
申请人： General Electric Company
发明人： Premerlani, William James , Keimel, Christopher Fred , Subramanian, Kanakasabapathi , Wang, Xuefeng , Aimi, Marco Francesco
IPC分类号： H01H59/00 , H01H1/00
CPC分类号： H01H59/0009 , H01H1/0036

5. 发明公开

EP2840422A3 Plasmonic interface and method of manufacturing thereof. 审中-公开
标题翻译：等离子体界面及其制造方法。
公开(公告)号：EP2840422A3
公开(公告)日：2015-06-03
申请号：EP14179835.5
申请日：2014-08-05
申请人： General Electric Company
发明人： Keimel, Christopher Fred , Hewgley, John Brian , Becerra, Juan Jose
IPC分类号： G02B6/122 , B32B37/12 , B32B37/24 , C25D11/26 , G02B6/02 , C25D11/04
CPC分类号： G02B6/02 , B32B37/12 , B32B37/24 , B32B2037/243 , B32B2255/205 , B32B2255/28 , B32B2307/40 , B32B2307/412 , B32B2551/00 , C25D11/04 , C25D11/26 , G02B6/1226
摘要： A method 30 of manufacturing a layered material stack 10 that includes a plasmonic interface between a plasmonic material 12 and optical waveguide material 18 is disclosed. The method includes providing 32 a substrate layer 14, disposing a layer of plasmonic material 12 on the substrate layer 14, depositing 36 a metal constituent of an optical waveguide material 22 directly onto the layer of plasmonic material 12, and anodizing 38 the metal constituent of the optical waveguide material 22 to form an optically transparent oxide of the metal constituent configured to couple light into the layer of plasmonic material 12, with the optically transparent oxide of the metal constituent forming an optical waveguide structure 18.
摘要翻译：公开了制造包括等离子体激元材料12和光波导材料18之间的等离子体界面的分层材料叠层10的方法30。该方法包括提供32衬底层14，在衬底层14上设置一层等离子体激元材料12，将光波导材料22的金属成分直接沉积在等离子体材料层12上，并阳极化38金属成分光波导材料22形成被配置为将光耦合到等离子体材料层12中的金属成分的光学透明氧化物，其中金属成分的光学透明氧化物形成光波导结构18。

6. 发明授权

EP2315221B1 Switch structure and method 有权
标题翻译：开关结构和方法
公开(公告)号：EP2315221B1
公开(公告)日：2012-11-14
申请号：EP10177345.5
申请日：2010-09-17
申请人： General Electric Company
发明人： Keimel, Christopher Fred , Aimi, Marco Francesco , Bansal, Shubhra , Corderman, Reed Roeder , Kishore, Kuna Venkat Satya Rama , Reddy, Eddula Sudhakar , Saha, Atanu , Subramanian, Kanakasabapathi , Thakre, Parag , Corwin, Alex David
IPC分类号： H01H1/00 , H01H59/00
CPC分类号： H01H1/0036 , H01H59/0009 , H01H2001/0052 , H01H2001/0084 , Y10T29/49105

7. 发明公开

EP2073236A1 MEMS Microswitch having a conductive mechanical stop 有权
标题翻译： MEMS-Mikroschalter mitleitfähigemMechanikstopp
公开(公告)号：EP2073236A1
公开(公告)日：2009-06-24
申请号：EP08171380.2
申请日：2008-12-11
申请人： General Electric Company
发明人： Wang, Xuefeng , Subramanian, Kanakasabapathi , Keimel, Christopher Fred , Aimi, Marco Francesco , Kishore, Kuna Venkat Satya Rama , Claydon, Glenn Scott , Boomhower, Oliver Charles , Thakre, Parag
IPC分类号： H01H59/00
CPC分类号： H01H59/0009 , H01H2059/0072
摘要： A MEMS switch 30, 50, 60, 70, 80 includes a substrate 32, a movable actuator 53, 63, 83 coupled to the substrate 32, a substrate contact 35, 85 , a substrate electrode 36, 56, 86, and a conductive stopper 39 59, 69, 79 electrically coupled to the movable actuator 33, 63, 83 and structured to prevent the movable actuator 33, 63, 83 from contacting the substrate electrode 36, 56, 86 while allowing the movable actuator 33, 63. 83 to make contact with the substrate contact 35, 85.
摘要翻译： MEMS开关30,50,60,70,80包括基板32，耦合到基板32的可移动致动器53,63,83，基板触点35,85，基板电极36,56,86以及导电电阻耦合到可动致动器33,63,83并且构造成阻止可动致动器33,63,83与基板电极36,56,88接触，同时允许可动致动器33,63,83。83 以与衬底接触35,85接触。

8. 发明授权

EP2073237B1 MEMS microswitch having a dual actuator and shared gate 有权
标题翻译： MEMS微动双致动和共享
公开(公告)号：EP2073237B1
公开(公告)日：2016-10-19
申请号：EP08171381.0
申请日：2008-12-11
申请人： General Electric Company
发明人： Keimel, Christopher Fred , Wang, Xuefeng , Aimi, Marco Francesco , Subramanian, Kanakasabapathi
IPC分类号： H01H59/00 , H01H9/40
CPC分类号： H01H59/0009 , H01H9/40 , H01H2001/0084 , H01H2057/006

9. 发明公开

EP2575164A3 3d integrated electronic device structure including increased thermal dissipation capabilities 审中-公开
标题翻译：电子装置集成的3D结构具有增强的热耗散能力
公开(公告)号：EP2575164A3
公开(公告)日：2016-01-13
申请号：EP12185346.9
申请日：2012-09-21
申请人： General Electric Company
发明人： Nagarkar, Kaustubh Ravindra , Keimel, Christopher Fred
IPC分类号： H01L23/10 , H01L23/367 , B81B7/00 , B81B3/00
CPC分类号： B81C1/00261 , B81B3/0081 , B81B7/0077 , B81B7/0093 , H01L21/56 , H01L23/10 , H01L23/3677 , H01L24/96 , H01L2224/16225 , H01L2924/01322 , H01L2924/12042 , H01L2924/12043 , H01L2924/1461 , H01L2924/00
摘要： A microelectronic device structure including increased thermal dissipation capabilities. The structure including a three-dimensional (3D) integrated chip assembly that is flip chip bonded to a substrate. The chip assembly including a device substrate including an active device disposed thereon. A cap layer is phsyically bonded to the device substrate to at least partially define a hermetic seal about the active device. The microelectronic device structure provides a plurality of heat dissipation paths therethrough to dissipate heat generated therein.

10. 发明公开

EP2840422A2 Plasmonic interface and method of manufacturing thereof. 审中-公开
标题翻译：电浆界面和方法其制备
公开(公告)号：EP2840422A2
公开(公告)日：2015-02-25
申请号：EP14179835.5
申请日：2014-08-05
申请人： General Electric Company
发明人： Keimel, Christopher Fred , Hewgley, John Brian , Becerra, Juan Jose
IPC分类号： G02B6/122
CPC分类号： G02B6/02 , B32B37/12 , B32B37/24 , B32B2037/243 , B32B2255/205 , B32B2255/28 , B32B2307/40 , B32B2307/412 , B32B2551/00 , C25D11/04 , C25D11/26 , G02B6/1226
摘要： A method 30 of manufacturing a layered material stack 10 that includes a plasmonic interface between a plasmonic material 12 and optical waveguide material 18 is disclosed. The method includes providing 32 a substrate layer 14, disposing a layer of plasmonic material 12 on the substrate layer 14, depositing 36 a metal constituent of an optical waveguide material 22 directly onto the layer of plasmonic material 12, and anodizing 38 the metal constituent of the optical waveguide material 22 to form an optically transparent oxide of the metal constituent configured to couple light into the layer of plasmonic material 12, with the optically transparent oxide of the metal constituent forming an optical waveguide structure 18.

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