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2. 发明公开

EP0475525A1 Plural-wavelength infrared detector devices 失效转让
标题翻译： Vorrichtung zur Infrarot-Detektion bei mehrerenWellenlängen。
公开(公告)号：EP0475525A1
公开(公告)日：1992-03-18
申请号：EP91202283.7
申请日：1991-09-06
申请人： GEC-MARCONI LIMITED
发明人： Baker, Ian Martin, c/o Philips Infrared , Dunn, William Andrew Ernest, c/o Philips Infrared
IPC分类号： H01L27/146 , H01L27/148
CPC分类号： H01L27/14669
摘要： An infrared detector device for viewing an object or scene at plural wavelengths, e.g. in the 3 to 5 micron and 8 to 14 micron wavebands, comprises detector elements (10 and 20) formed in two or more infrared-sensitive materials with different bandgaps, e.g. in cadmium mercury telluride. These materials may be provided side-by-side in a single level on a substrate (3) or preferably as different levels (1 and 2) on the substrate (3). Each detector element (10 and 20) comprises a p-n junction (11 and 21) between opposite conductivity type regions (12,13 and 22,23). Electrical connections (15,25,24) extend from these regions to the substrate (3). A degree of versatility and freedom in the design and fabrication of the device is obtained by adopting a connection structure in accordance with the invention, in which one connection (25) of the longer-wavelength response element (20) contacts both the semiconductor material (2) of that element (20) and the larger-bandgap material (1) of the shorter-wavelength response element (10), at a side-wall (42) of both materials. The larger-bandgap material (1) comprises a further region (18) which adjoins the side-wall (42) and which forms a further p-n junction (19) electrically in parallel with the p-n junction (21) of the longer-wavelength detector element (20). This further p-n junction (19) has a higher impedance than the element p-n junction (21) due to the difference in bandgap, and so the output signal in this connection (25) is dominated by the photo-current generated in the longer-wavelength detector element (20).
摘要翻译：一种用于观察多个波长的物体或场景的红外检测器装置，例如，在3至5微米和8至14微米的波段中，包括形成在具有不同带隙的两个或更多个红外敏感材料中的检测器元件（10和20），例如。在碲化镉中。这些材料可以在衬底（3）上的单个层中并排设置，或者优选地在衬底（3）上以不同的水平（1和2）提供。每个检测器元件（10和20）包括在相对的导电类型区域（12,13和22,23）之间的p-n结（11和21）。电连接（15,25,24）从这些区域延伸到衬底（3）。通过采用根据本发明的连接结构获得器件的设计和制造的多功能性和自由度，其中较长波长响应元件（20）的一个连接（25）接触半导体材料 2）和较短波长响应元件（10）的较大带隙材料（1）的两个材料的侧壁（42）上。较大带隙材料（1）包括与侧壁（42）相邻的另一个区域（18），并形成与长波长检测器的pn结（21）电并联的另外的pn结（19）元件（20）。由于带隙的差异，该另外的pn结（19）具有比元件pn结（21）更高的阻抗，因此在该连接（25）中的输出信号由在较长波长中产生的光电流检测器元件（20）。

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