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1. 发明公开

EP4120322A1 POLISHING COMPOSITION AND POLISHING METHOD 审中-实审
公开(公告)号：EP4120322A1
公开(公告)日：2023-01-18
申请号：EP21767897.8
申请日：2021-03-04
申请人： Fujimi Incorporated
发明人： TSUCHIYA, Kohsuke
IPC分类号： H01L21/304
摘要： Provided is a polishing composition that can achieve haze reduction and wettability enhancement of a polished surface of a silicon wafer. This polishing composition contains silica particles, a cellulose derivative, a basic compound, and water. Here, the silica particles have an average primary particle diameter of 30 nm or less and an average secondary particle diameter of 60 nm or less. The cellulose derivative has a weight average molecular weight of more than 120 × 10 4 .

2. 发明公开

EP3950875A1 POLISHING COMPOSITION 审中-实审
公开(公告)号：EP3950875A1
公开(公告)日：2022-02-09
申请号：EP20776335.0
申请日：2020-03-25
申请人： Fujimi Incorporated
发明人： TSUCHIYA, Kohsuke , ASADA, Maki , ICHITSUBO, Taiki
IPC分类号： C09K3/14 , B24B37/00 , H01L21/304
摘要： Provided is a polishing composition having excellent capability of reducing haze on the surface of an object to be polished. The polishing composition provided by the present invention includes an abrasive, a basic compound, a water-soluble polymer, and water. The water-soluble polymer includes at least a water-soluble polymer P1 and a water-soluble polymer P2. Here, the water-soluble polymer P1 is an acetalized polyvinyl alcohol-based polymer, and the water-soluble polymer P2 is a water-soluble polymer other than the acetalized polyvinyl alcohol-based polymer.

3. 发明公开

EP3708630A1 POLISHING COMPOSITION AND PRODUCTION METHOD THEREFOR 审中-公开
公开(公告)号：EP3708630A1
公开(公告)日：2020-09-16
申请号：EP18871893.6
申请日：2018-10-19
申请人： Fujimi Incorporated , Toagosei Co., Ltd.
发明人： TSUCHIYA, Kohsuke , TANSHO, Hisanori , SUGA, Yusuke , ICHITSUBO, Taiki , TAKEMOTO, Takayuki , SAITO, Naohiko , KAAI, Michihiro
IPC分类号： C09K3/14 , B24B37/00 , C09G1/02 , H01L21/304
摘要： Provided is a polishing composition which contains a water-soluble polymer and is suitable for reducing LPDs. The polishing composition provided in this application includes an abrasive, a water-soluble polymer, and a basic compound. In the polishing composition, the content of a reaction product of a polymerization initiator and a polymerization inhibitor is 0.1 ppb or less of the polishing composition on a weight basis.

4. 发明授权

EP3053978B1 POLISHING COMPOSITION AND METHOD FOR PRODUCING SAME 有权
公开(公告)号：EP3053978B1
公开(公告)日：2019-11-06
申请号：EP14848277.1
申请日：2014-09-22
申请人： Fujimi Incorporated
发明人： TSUCHIYA, Kohsuke , MORI, Yoshio
IPC分类号： C09K3/14 , B24B37/00 , H01L21/304 , C09G1/04

5. 发明公开

EP3546542A1 POLISHING COMPOSITION 审中-公开
公开(公告)号：EP3546542A1
公开(公告)日：2019-10-02
申请号：EP17873850.6
申请日：2017-11-15
申请人： Fujimi Incorporated
发明人： TSUCHIYA, Kohsuke , ASADA, Maki
IPC分类号： C09K3/14 , B24B37/00 , C09G1/02 , H01L21/304
摘要： Provided is a polishing composition that includes a cellulose derivative and is effective for reducing surface defects after polishing. According to the present application, a polishing composition comprising an abrasive, a basic compound and a surface protective agent is provided. The surface protective agent contains a cellulose derivative and a vinyl alcohol-based dispersant. The surface protective agent has a dispersibility parameter α of less than 100.

6. 发明公开

EP3133639A1 COMPOSITION FOR POLISHING SILICON WAFERS 有权
标题翻译：抛光硅晶片的组成
公开(公告)号：EP3133639A1
公开(公告)日：2017-02-22
申请号：EP15780524.3
申请日：2015-04-07
申请人： Fujimi Incorporated
发明人： TSUCHIYA, Kohsuke , TANSHO, Hisanori , MORI, Yoshio
IPC分类号： H01L21/304 , B24B37/00 , C09K3/14 , H01L21/321
CPC分类号： C09K3/14 , C09G1/02 , H01L21/02024 , H01L21/02052
摘要： Provided is a silicon wafer polishing composition having an excellent effect of reducing the haze on the surface of silicon wafers and excellent filterability. The composition for polishing silicon wafers provided here includes a silicon-wafer polishing accelerator, an amido group-containing polymer X, an organic compound Y having no amido group, and water. The amido group-containing polymer X has, on the main chain, a building block A derived from a monomer represented by General Formula (1). The relation between the molecular weight M x of the amido group-containing polymer X and the molecular weight M y of the organic compound Y satisfies the expression: 200 ≤ M y x .
摘要翻译：本发明提供一种硅晶片研磨用组合物，该硅晶片研磨用组合物具有降低硅晶片表面的雾度，过滤性优异的优异的效果。这里提供的用于抛光硅晶片的组合物包括硅晶片抛光促进剂，含酰胺基的聚合物X，不含酰胺基的有机化合物Y和水。含酰胺基聚合物X在主链上具有来自通式（1）所示单体的结构单元A. 含酰胺基聚合物X的分子量Mx与有机化合物Y的分子量My的关系满足式200≤My

7. 发明公开

EP3967736A1 POLISHING COMPOSITION, METHOD FOR PRODUCING POLISHING COMPOSITION, AND KIT FOR PREPARING POLISHING COMPOSITION 有权
公开(公告)号：EP3967736A1
公开(公告)日：2022-03-16
申请号：EP21205576.8
申请日：2014-03-14
申请人： Fujimi Incorporated
发明人： TSUCHIYA, Kohsuke , TANSHO, Hisanori , ICHITSUBO, Taiki
IPC分类号： C09K3/14 , B24B37/00 , C09G1/02 , H01L21/304 , H01L21/02 , C09G1/00
摘要： Provided are a polishing composition comprising a water-soluble polymer that has a molecular structure comprising a plurality of repeat unit species having different SP values and a polishing composition exhibiting an etching rate and an abrasive adsorption in prescribed ranges when determined by prescribed methods. Also provided is a method for producing a polishing composition, using an abrasive, a basic compound, a water-soluble polymer having an alkaline-hydrolytic functional group, and water. The method comprises a step of obtaining an agent A comprising at least the basic compound and a step of obtaining an agent B comprising at least the water-soluble polymer H.

8. 发明公开

EP3261114A1 COMPOSITION FOR SILICON WAFER POLISHING AND POLISHING METHOD 有权
标题翻译：硅晶片抛光和抛光方法的组成
公开(公告)号：EP3261114A1
公开(公告)日：2017-12-27
申请号：EP16752069.1
申请日：2016-01-22
申请人： Fujimi Incorporated
发明人： TSUCHIYA, Kohsuke , MOMOTA, Satoshi
IPC分类号： H01L21/304 , B24B37/00 , C09K3/14
CPC分类号： C09G1/02 , B24B37/00 , B24B37/044 , C09K3/1463 , H01L21/02024 , H01L21/304
摘要： To perform polishing while reducing an LPD and preventing contamination with metals, particularly nickel and copper, in final polishing of a silicon wafer. A polishing composition contains abrasives, a water-soluble polymer, a basic compound, a chelating agent, and water, in which, when the particle diameter equivalent to a particle diameter at a cumulative volume of 10% from a smaller particle diameter side is defined as D10, the particle diameter equivalent to a particle diameter at a cumulative volume of 50% from the smaller particle diameter side is defined as D50, and the particle diameter equivalent to a particle diameter at a cumulative volume of 90% from the smaller particle diameter side is defined as D90 in a particle size distribution of particles present in the polishing composition, a value of a coarse particle frequency parameter A defined by (Expression 1) illustrated below is less than 1.7, A = (D90 - D50) / (D50 - D10) and the polishing composition is used for final polishing in silicon wafer polishing.
摘要翻译：在减少LPD的同时进行抛光，并在硅晶片的最终抛光中防止金属特别是镍和铜的污染。抛光组合物含有研磨剂，水溶性聚合物，碱性化合物，螯合剂和水，其中当限定等于从小粒径侧开始累积体积为10％时的粒径的粒径时作为D10，将从小粒径侧起累积体积为50％时的粒径相当的粒径定义为D50，相当于从小粒径起累积体积为90％时的粒径（D90-D50）/（D50-D50）/（D50-D50）/（D50-D50）的关系， - D10），并将该抛光组合物用于硅晶片抛光中的最终抛光。

9. 发明公开

EP3258483A1 METHOD FOR POLISHING SILICON WAFER AND SURFACE TREATMENT COMPOSITION 审中-公开
标题翻译：抛光硅晶片和表面处理组合物的方法
公开(公告)号：EP3258483A1
公开(公告)日：2017-12-20
申请号：EP16748863.4
申请日：2016-01-22
申请人： Fujimi Incorporated
发明人： TSUCHIYA, Kohsuke
IPC分类号： H01L21/304 , B24B37/00 , C09K3/14
CPC分类号： C09G1/02 , B24B37/044 , C09K3/1454 , C09K3/1463 , H01L21/02024 , H01L21/02052 , H01L21/30625
摘要： There is provided a polishing method capable of more reducing defects on a silicon wafer surface. A polishing method of a silicon wafer, which includes a polishing step and a surface treatment step conducted after the polishing step and in which the number of abrasives in a surface treatment composition used in the surface treatment step is 1.0×10 10 particles/mL or more and 1.0×10 13 particles/mL or less.
摘要翻译：提供了一种能够进一步减少硅晶片表面缺陷的抛光方法。一种硅晶片的研磨方法，其包括研磨工序和研磨工序后进行的表面处理工序，其中，表面处理工序中使用的表面处理用组合物中的研磨剂的个数为1.0×1010个/ mL以上 1.0×10 13个/ mL以下。

10. 发明公开

EP4317337A1 POLISHING METHOD, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, AND POLISHING COMPOSITION SET 审中-实审
公开(公告)号：EP4317337A1
公开(公告)日：2024-02-07
申请号：EP22775475.1
申请日：2022-03-18
申请人： Fujimi Incorporated
发明人： ICHITSUBO, Taiki , TSUCHIYA, Kohsuke
IPC分类号： C09G1/02 , C09K3/14 , B24B37/00 , H01L21/304
摘要： The present invention provides means capable of reducing surface defects on a polished substrate. The present invention relates to a method for polishing a substrate, in which the polishing method includes a polishing step, the polishing step includes two or more polishing sub-steps of polishing the substrate by rotating a platen while supplying a polishing composition to a contact surface between the substrate and a polishing pad attached to the platen, the two or more polishing sub-steps include a polishing sub-step 1 of performing polishing on the platen using a polishing composition S1, and a polishing sub-step 2 of performing, after the polishing sub-step 1, polishing on the platen used in the polishing sub-step 1 using a polishing composition S2, the polishing composition S1 contains an abrasive 1, water, and a water-soluble polymer having an abrasive adsorption parameter of 5 or more, and the polishing composition S2 contains an abrasive 2, water, and a water-soluble polymer having the abrasive adsorption parameter less than 5, but does not contain a water-soluble polymer having the abrasive adsorption parameter of 5 or more in a content of 0.005% by mass or more.

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