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    • 1. 发明公开
    • SEMICONDUCTOR ELEMENT AND INSULATING-LAYER-FORMING COMPOSITION
    • 哈萨克斯坦民主共和国的独立组织
    • EP3125277A1
    • 2017-02-01
    • EP15769500.8
    • 2015-03-23
    • FUJIFILM Corporation
    • NAGATA, YuzoTAKIZAWA, HirooTSUCHIMURA, TomotakaTSURUTA, Takuya
    • H01L21/312C08F212/00C08F220/10H01L21/283H01L29/786H01L51/05H01L51/30
    • Provided is a semiconductor element having a semiconductor layer and an insulating layer adjacent to the semiconductor layer, in which the insulating layer is formed of a crosslinked product of a polymer compound having a repeating unit (IA) represented by the following General Formula (IA) and a repeating unit (IB) represented by the following General Formula (IB).

      In General Formula (IA), R 1a represents a hydrogen atom, a halogen atom, or an alkyl group. L 1a and L 2a each independently represent a single bond or a linking group. X represents a crosslinkable group. m2a represents an integer of 1 to 5, and in a case where m2a is 2 or more, m2a number of X's may be the same or different from each other. m1a represents an integer of 1 to 5, and in a case where m1a is 2 or more, m1a number of (-L 2a -(X) m2a )'s may be the same or different from each other. In General Formula (IB),' R 1b represents a hydrogen atom, a halogen atom, or an alkyl group. L 1b represents a single bond or a linking group, and Ar 1b represents an aromatic ring. m1b represents an integer of 1 to 5.
    • 提供一种半导体元件,其具有与半导体层相邻的半导体层和绝缘层,其中绝缘层由具有由以下通式(IA)表示的重复单元(IA)的高分子化合物的交联产物形成, 和由以下通式(IB)表示的重复单元(IB)。 在通式(IA)中,R 1a表示氢原子,卤素原子或烷基。 L 1a和L 2a各自独立地表示单键或连接基团。 X表示可交联基团。 m2a表示1〜5的整数,并且在m2a为2以上的情况下,m 2的数X可以相同也可以不同。 m1a表示1〜5的整数,并且在m1a为2以上的情况下,(a1a-2a(x)m2a)的m1a数可以相同也可以不同。 通式(IB)中,R 1b表示氢原子,卤素原子或烷基。 L 1b表示单键或连接基团,Ar 1b表示芳香环。 m1b表示1〜5的整数。