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1. 发明公开

EP2683792A1 NOVEL ETCHING COMPOSITION 有权
标题翻译：新的蚀刻组合物
公开(公告)号：EP2683792A1
公开(公告)日：2014-01-15
申请号：EP12757282.4
申请日：2012-03-08
申请人： FujiFilm Electronic Materials USA, Inc. , FUJIFILM Corporation
发明人： TAKAHASHI, Tomonori , INABA, Tadashi , MIZUTANI, Atsushi , DU, Bing , WOJTCZAK, William A. , TAKAHASHI, Kazutaka , KAMIMURA, Tetsuya
IPC分类号： C09K13/00
CPC分类号： H01L21/32134 , C09K13/06 , C23F1/16 , C23F1/28 , C23F1/30 , C23F1/44 , H01L21/28518 , H01L21/76843
摘要： This disclosure relates to an etching composition containing at least one sulfonic acid, at least one compound containing a halide anion, the halide being chloride or bromide, at least one compound containing a nitrate or nitrosyl ion, and water. The at least one sulfonic acid can be from about 25% by weight to about 95% by weight of the composition. The halide anion can be chloride or bromide, and can be from about 0.01% by weight to about 0.5% by weight of the composition. The nitrate or nitrosyl ion can be from about 0.1% by weight to about 20% by weight of the composition. The water can be at least about 3% by weight of the composition.
摘要翻译：本发明涉及包含至少一种磺酸，至少一种含卤化物阴离子的化合物，卤化物为氯化物或溴化物，至少一种含有硝酸根或亚硝酰基离子的化合物和水的蚀刻组合物。该至少一种磺酸可以为该组合物的约25重量％至约95重量％。卤化物阴离子可以是氯化物或溴化物，并且可以是组合物的约0.01重量％至约0.5重量％。硝酸盐或亚硝酰离子可以为组合物重量的约0.1％至约20％。水可以是组合物重量的至少约3％。

2. 发明公开

EP3719105A1 CLEANING FORMULATION FOR REMOVING RESIDUES ON SURFACES 有权
公开(公告)号：EP3719105A1
公开(公告)日：2020-10-07
申请号：EP20162184.4
申请日：2014-12-03
申请人： Fujifilm Electronic Materials USA, Inc.
发明人： TAKAHASHI, Tomonori , DU, Bing , WOJTCZAK, William A. , DORY, Thomas , KNEER, Emil A.
IPC分类号： C11D3/00 , C11D7/32 , C11D7/50 , C11D11/00 , C23G1/18 , H01L21/02 , H01L21/311
摘要： This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one second chelating agent different from the first chelating agent, the second chelating agent containing at least two nitrogen-containing groups; 4) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 5) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 6) water; and 7) optionally, at least one pH adjusting agent, the pH adjusting agent being a base free of a metal ion. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

3. 发明公开

EP3241075A1 STRIPPING COMPOSITIONS FOR REMOVING PHOTORESISTS FROM SEMICONDUCTOR SUBSTRATES 审中-实审
标题翻译：用于从半导体基材去除光刻胶的剥离组合物
公开(公告)号：EP3241075A1
公开(公告)日：2017-11-08
申请号：EP15876079.3
申请日：2015-12-28
申请人： FujiFilm Electronic Materials USA, Inc.
发明人： DU, Bing , DORY, Thomas , WOJTCZAK, William A.
IPC分类号： G03F7/32
CPC分类号： C11D11/0047 , C11D3/0026 , C11D3/2006 , C11D3/28 , C11D3/30 , C11D3/43 , C11D7/261 , C11D7/3209 , C11D7/3281 , C11D7/5009 , C11D7/5013 , C11D7/5022 , G03F7/423 , G03F7/425 , G03F7/426 , H01L21/31133
摘要： This disclosure relates to photoresist stripping compositions containing 1) at least one water soluble polar aprotic organic solvent; 2) at least one alcohol solvent; 3) at least one quaternary ammonium hydroxide; 4) water; 5) at least one copper corrosion inhibitor selected from 6-substituted-2,4-diamino-1,3,5-triazines; and 6) optionally, at least one defoaming surfactant.

4. 发明公开

EP3104398A1 CLEANING FORMULATION FOR REMOVING RESIDUES ON SURFACES 有权
标题翻译： REINIGUNGSFORMULIERUNG ZUR ENTFERNUNG VONRÜCKSTÄNDENAUFOBERFLÄCHEN
公开(公告)号：EP3104398A1
公开(公告)日：2016-12-14
申请号：EP16178830.2
申请日：2014-12-03
申请人： Fujifilm Electronic Materials USA, Inc.
发明人： TAKAHASHI, Tomonori , DU, Bing , WOJTCZAK, William A. , DORY, Thomas , KNEER, Emil A.
IPC分类号： H01L21/311
摘要： This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one second chelating agent different from the first chelating agent, the second chelating agent containing at least two nitrogen-containing groups; 4) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 5) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 6) water; and 7) optionally, at least one pH adjusting agent, the pH adjusting agent being a base free of a metal ion. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.
摘要翻译：本公开涉及一种清洁组合物，其包含1）至少一种氧化还原剂; 2）至少一种第一螯合剂，所述第一螯合剂是聚氨基多羧酸; 3）与第一螯合剂不同的至少一种第二螯合剂，所述第二螯合剂含有至少两个含氮基团; 4）至少一种金属腐蚀抑制剂，金属缓蚀剂为取代或未取代的苯并三唑; 5）至少一种选自水溶性醇，水溶性酮，水溶性酯和水溶性醚的有机溶剂; 6）水; 和7）任选的至少一种pH调节剂，所述pH调节剂是不含金属离子的碱。本公开还涉及使用上述组合物来清洁半导体衬底的方法。

5. 发明公开

EP3077129A1 CLEANING FORMULATION FOR REMOVING RESIDUES ON SURFACES 有权
标题翻译：清洁剂清除表面残留物
公开(公告)号：EP3077129A1
公开(公告)日：2016-10-12
申请号：EP14867771.9
申请日：2014-12-03
申请人： FujiFilm Electronic Materials USA, Inc.
发明人： TAKAHASHI, Tomonori , DU, Bing , WOJTCZAK, William A. , DORY, Thomas , KNEER, Emil A.
IPC分类号： B08B3/04 , C11D7/60
摘要： This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one second chelating agent different from the first chelating agent, the second chelating agent containing at least two nitrogen-containing groups; 4) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 5) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 6) water; and 7) optionally, at least one pH adjusting agent, the pH adjusting agent being a base free of a metal ion. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.
摘要翻译：本公开涉及一种清洁组合物，其包含1）至少一种氧化还原剂; 2）至少一种第一螯合剂，第一螯合剂是聚氨基多羧酸; 3）至少一种不同于第一螯合剂的第二螯合剂，第二螯合剂含有至少两个含氮基团; 4）至少一种金属腐蚀抑制剂，所述金属腐蚀抑制剂为取代或未取代的苯并三唑; 5）至少一种选自水溶性醇，水溶性酮，水溶性酯和水溶性醚的有机溶剂; 6）水; 和7）任选地，至少一种pH调节剂，该pH调节剂是不含金属离子的碱。本公开还涉及使用上述组合物来清洁半导体衬底的方法。

6. 发明授权

EP3077129B1 CLEANING FORMULATION FOR REMOVING RESIDUES ON SURFACES 有权
公开(公告)号：EP3077129B1
公开(公告)日：2020-11-11
申请号：EP14867771.9
申请日：2014-12-03
申请人： FujiFilm Electronic Materials USA, Inc.
发明人： TAKAHASHI, Tomonori , DU, Bing , WOJTCZAK, William A. , DORY, Thomas , KNEER, Emil A.
IPC分类号： H01L21/311 , H01L21/02 , C11D3/00 , C11D7/32 , C11D7/50 , C11D11/00

7. 发明授权

EP3104398B1 CLEANING FORMULATION AND METHOD FOR REMOVING RESIDUES ON SURFACES 有权
公开(公告)号：EP3104398B1
公开(公告)日：2020-03-11
申请号：EP16178830.2
申请日：2014-12-03
申请人： Fujifilm Electronic Materials USA, Inc.
发明人： TAKAHASHI, Tomonori , DU, Bing , WOJTCZAK, William A. , DORY, Thomas , KNEER, Emil A.
IPC分类号： H01L21/311 , C11D11/00

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