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1. 发明公开

EP2671229A4 METHOD OF WRITING TO A SPIN TORQUE MAGNETIC RANDOM ACCESS MEMORY 有权转让
标题翻译：方法写在一拧，扭矩磁直接访问存储器
公开(公告)号：EP2671229A4
公开(公告)日：2016-07-20
申请号：EP12742660
申请日：2012-01-31
申请人： EVERSPIN TECHNOLOGIES INC
发明人： ALAM SYED M , ANDRE THOMAS , CROFT MATTHEW R , SUBRAMANIAN CHITRA , LIN HALBERT
IPC分类号： G11C11/00 , G06F11/10 , G11C11/16 , G11C13/00 , G11C29/04
CPC分类号： G11C11/1675 , G06F11/1048 , G06F11/1076 , G11C11/00 , G11C11/16 , G11C11/1673 , G11C11/1693 , G11C2013/0076 , G11C2029/0411
摘要： A spin-torque magnetoresistive memory comprises an array (602) of spin-torque magnetoresistive memory bits; a plurality of latches (626); array read circuits (610) coupled to the array of bits (602) and the plurality of latches (626), wherein the array read circuits are configured to: sample bits in a page within the array of bits, wherein sampling provides a sampled voltage for each of the bits in the page, wherein the array read circuits are configured to sample each bit in the page by applying a first voltage across the bit and converting a current resulting from applying the first voltage to the sampled voltage; after sampling the bits in the page, apply a first write current pulse to each of the bits in the page to set all of the bits in the page to a first logic state; after applying the first write current pulse to each of the bits in the page, resample each of the bits in the page to provide a resampled voltage for each bit in the page, wherein the array read circuits are configured to resample each bit by reapplying the first voltage across the bit and adding an offset current to a current resulting from reapplying the first voltage across the bit, wherein the array read circuits are configured to generate the resampled voltage for each bit using the offset current and the current resulting from reapplying the first voltage across the bit; for each bit in the page, compare the resampled voltage with the sampled voltage to determine a bit state for the bit, wherein the bit state for each bit is either the first logic state or a second logic state; and store the bit state for each bit in the page in a corresponding latch of the plurality of latches (626). The memory comprises further array write circuits (612) coupled to the array of bits (602) and the plurality of latches (626), the array write circuits (612) configured to, for each of the bits in the page having the second logic state as stored in the plurality of latches (626), initiate a write-back to reset the bit to the second state in the array, wherein the write-back for each bit includes applying a second write current pulse to set the bit to the second state.
摘要翻译：一种方法，包括自旋扭矩磁性随机存取存储器的破坏性读出比特，并立即写回原来的或反转的值。写回位和写回比特的有条件的反演的大多数状态的检测被采用以减少回写脉冲的数量。在指定时间内或原始写入手术中止是开始将导致回写脉冲或原始写操作脉冲的部分之前接收到写命令。写在随后的写操作脉冲将遵循开采破坏性读期间写回位条件反转确定性。

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