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1. 发明公开

EP2679987A1 Inspecting device and inspecting method 无效转让
标题翻译： Inspektionsvorrichtung undPrüfungsverfahren
公开(公告)号：EP2679987A1
公开(公告)日：2014-01-01
申请号：EP13167658.7
申请日：2013-05-14
申请人： Dainippon Screen Mfg. Co., Ltd. , Osaka University
发明人： Nakanishi, Hidetoshi , Ito, Akira , Tonouchi, Masayoshi , Kawayama, Iwao
IPC分类号： G01N21/95 , G01N21/956 , G01N21/35
CPC分类号： G01R31/2607 , G01N21/3586 , G01N21/9501 , G01N21/956 , H02S50/10
摘要： An inspecting device serves to inspect a solar cell. The inspecting device includes an irradiation part for irradiating with pulsed light and a detection part having a detector for detecting an electromagnetic wave pulse radiated from the solar cell depending on the irradiation with the pulsed light. The detector detects an electric field intensity of the electromagnetic wave pulse (41, 43) depending on irradiation with probe light emitted from a light source (a femtosecond laser) of the pulsed light. Moreover, the inspecting device includes a delay part for delaying a timing for detecting the electromagnetic wave pulse in the detector. Furthermore, the inspecting device includes an electromagnetic wave pulse analysis part for detecting a negative peak (B1, B3) of the electric field intensity in a temporal waveform of the electromagnetic wave pulse. Standardization between different measuring positions (P1, P2) can be provided based on the electric field intensity detected at other timing of the respective temporal waveforms, e.g. electric field intensities having small fluctuation (A1, A3).
摘要翻译：检查装置用于检查太阳能电池。检查装置包括用于照射脉冲光的照射部分和具有检测器的检测部件，该检测器根据脉冲光的照射来检测从太阳能电池辐射的电磁波脉冲。检测器根据从脉冲光的光源（飞秒激光）发射的探测光的照射来检测电磁波脉冲（41,43）的电场强度。此外，检查装置包括用于延迟用于检测检测器中的电磁波脉冲的定时的延迟部分。此外，检查装置包括用于检测电磁波脉冲的时间波形中的电场强度的负峰值（B1，B3）的电磁波脉冲分析部。可以基于在各个时间波形的其它定时检测到的电场强度来提供不同测量位置（P1，P2）之间的标准化，例如。电场强度波动小（A1，A3）。

2. 发明公开

EP2631635A1 Inspection apparatus and inspection method 有权
标题翻译： PrüfvorrichtungundPrüfverfahren
公开(公告)号：EP2631635A1
公开(公告)日：2013-08-28
申请号：EP13153055.2
申请日：2013-01-29
申请人： Dainippon Screen Mfg. Co., Ltd. , OSAKA UNIVERSITY
发明人： Nakanishi, Hidetoshi , Tonouchi, Masayoshi , Kawayama, Iwao
IPC分类号： G01N21/95
CPC分类号： G01R31/2607 , G01N21/9501 , H02S50/10
摘要： An inspection apparatus inspects a photovoltaic cell panel (90) in which the photo device is formed. The inspection apparatus includes: an irradiation part (12) that irradiates the photovoltaic cell panel with pulsed light (pump light) emitted from a femtosecond laser; a detecting part (13) that detects an electromagnetic wave pulse, which is generated from the photovoltaic cell panel according to the irradiation of the pump light; and a continuous light irradiation part (14) that irradiates a portion, which is irradiated with the pump light in the photovoltaic cell panel, with continuous light.
摘要翻译：检查装置检查其中形成有照相装置的光伏电池板（90）。检查装置包括：照射部（12），其从飞秒激光发射的脉冲光（泵浦光）照射光伏电池面板; 根据所述泵浦光的照射检测从所述光伏电池面板产生的电磁波脉冲的检测部（13）; 以及连续的光照射部（14），其以连续的光照射被照射在光伏电池面板中的泵浦光的一部分。

3. 发明公开

EP2574906A1 Semiconductor inspection method and semiconductor inspection apparatus 审中-公开
标题翻译： Verfahren zurHalbleiterprüfungund Vorrichtung zurHalbleiterprüfung
公开(公告)号：EP2574906A1
公开(公告)日：2013-04-03
申请号：EP12184081.3
申请日：2012-09-12
申请人： Dainippon Screen Mfg. Co., Ltd. , Osaka University
发明人： Nakanishi, Hidetoshi , Tonouchi, Masayoshi
IPC分类号： G01N21/17 , G01N21/95 , G01N21/956 , G01R31/311
CPC分类号： G01N21/9501 , G01N21/1717 , G01N21/956 , G01R31/311
摘要： A semiconductor inspection apparatus (100) is an apparatus for inspecting a semiconductor device. The semiconductor inspection apparatus (100) includes a pulsed laser light source (14) for emitting pulsed laser light (2) toward a substrate (1) with a semiconductor device formed thereon, an electromagnetic wave pulse application part (18) for applying a reverses-biasing electromagnetic wave pulse (4) for applying a reverse bias to an application position (10) which receives the pulsed laser light (2), and a detection part (17) for detecting an electromagnetic wave pulse (3) emitted from the application position (10) in response to the application of the pulsed laser light (2).
摘要翻译：半导体检查装置（100）是用于检查半导体装置的装置。半导体检查装置（100）包括用于在其上形成有半导体器件的朝向衬底（1）发射脉冲激光（2）的脉冲激光源（14），用于施加反转的电磁波脉冲施加部（18）用于向接收脉冲激光（2）的施加位置（10）施加反向偏压的偏置电磁波脉冲（4）;以及用于检测从应用发射的电磁波脉冲（3）的检测部分（17）位置（10）响应于脉冲激光（2）的应用。

4. 发明公开

EP2607945A2 Element, device and method for generating electromagnetic radiation in the terahertz domain 失效转让
标题翻译：装置和方法用于在太赫兹范围内产生电磁辐射
公开(公告)号：EP2607945A2
公开(公告)日：2013-06-26
申请号：EP12184055.7
申请日：2012-09-12
申请人： Dainippon Screen Mfg. Co., Ltd. , OSAKA UNIVERSITY
发明人： Nakanishi, Hidetoshi , Tonouchi, Masayoshi
IPC分类号： G02F1/015 , G02F1/01
CPC分类号： G01N21/64 , G01N21/63 , G01N21/9501 , G01N21/956 , G02F1/0126 , G02F1/015 , G02F2001/0152 , G02F2201/122 , G02F2201/30 , G02F2202/12 , G02F2203/13
摘要： An electromagnetic radiation generating device generates electromagnetic wave pulses (LT1) from a plane surface which receives pulsed light (LP1). The electromagnetic radiation generating device includes an electromagnetic radiation generating element (10), a light irradiating unit, and a reverse bias voltage applying circuit. The electromagnetic radiation generating element (10) includes a depletion layer forming body (90) formed by stacking a p-type silicon layer (14) and an n-type silicon layer (15) in a planar pattern having a pn junction (17), an antireflection film (16) and a light receiving surface electrode formed on the light receiving surface (10A) which is one surface of the depletion layer forming body (90), the light receiving surface electrode including a plurality of parallel electrode parts (121) that are equally spaced while the distance is maintained between the parallel electrode parts (121), the distance corresponding to the wavelength of the electromagnetic wave pulses (LT1) generated from the depletion layer forming body (90) and a rear surface electrode (13) formed on the rear surface (10B) which is the opposite surface of the depletion layer forming body (90). The reverse bias voltage applying circuit applies a voltage to bring a depletion layer formed in the depletion layer forming body into a reverse biased condition through the light receiving surface electrode and the rear surface electrode (13).
摘要翻译：的电磁辐射发生装置生成从一个平面表面，其接收的脉冲光（LP1）的电磁波脉冲（LT1）。电磁辐射产生设备包括在电磁辐射产生元件（10），光照射单元，并且反向偏置电压施加电路。的电磁辐射产生元件（10）包括通过以平面图案堆叠具有一个pn结的p型硅层（14）和n型硅层（15）形成的耗尽层形成体（90）（17）（防反射膜 - （16）和形成在所述光接收表面（10A）上的光接收表面电极所有这一切是在耗尽层形成体（90），光接收表面电极，包括平行的电极部分121的多个一个表面）那样同时的距离保持平行电极部分（121）之间的等距间隔，从耗尽层产生的形成体（90）和一个背面电极（13对应于电磁波脉冲（LT1）的波长的距离）形成在后表面（10B），所有这些是耗尽层形成体（90）的相对的表面上。施加电路的反向偏压施加电压通过光接收表面电极和背面电极（13）以使在所述耗尽层形成体形成的耗尽层成反向偏置状态。

5. 发明公开

EP2546634A1 Inspection apparatus and inspection method 审中-公开
标题翻译： ÜberprüfungsvorrichtungundÜberprüfungsverfahren
公开(公告)号：EP2546634A1
公开(公告)日：2013-01-16
申请号：EP12170803.6
申请日：2012-06-05
申请人： Dainippon Screen Mfg. Co., Ltd. , OSAKA UNIVERSITY
发明人： Nakanishi, Hidetoshi , Tonouchi, Masayoshi , Kawayama, Iwao
IPC分类号： G01N21/35 , G01R31/26
CPC分类号： G01N21/3586 , G01N21/3563 , G01N21/9501 , G01N21/956 , H02S50/10
摘要： A technology of inspecting a photoexcited carrier generation area of a photo device (90) in a non-contact manner is provided. An inspection apparatus (100) inspects a photovoltaic cell panel (90) in which the photo device is formed. The inspection apparatus includes an irradiation part (12) that irradiates the photovoltaic cell panel with pulsed light from a light receiving surface (91S) side and a detecting part (13) that detects electric field intensity of a terahertz wave pulse, which is generated according to the irradiation of the pulsed light.
摘要翻译：提供以非接触方式检查照相装置（90）的光激发载体产生区域的技术。检查装置（100）检查其中形成有照相装置的光伏电池板（90）。检查装置包括：照射部分（12），其从光接收面（91S）侧照射光伏电池面板的脉冲光;以及检测部（13），其检测太赫兹波脉冲的电场强度照射脉冲光。

6. 发明公开

EP2775288A1 Inspecting device and inspecting method 审中-公开
标题翻译：检查装置和检查方法
公开(公告)号：EP2775288A1
公开(公告)日：2014-09-10
申请号：EP14153853.8
申请日：2014-02-04
申请人： Dainippon Screen Mfg. Co., Ltd. , OSAKA UNIVERSITY
发明人： Nakanishi, Hidetoshi , Ito, Akira , Tonouchi, Masayoshi , Kawayama, Iwao
IPC分类号： G01N21/63 , G01N21/95
CPC分类号： G01N21/9501 , G01N21/636 , G01N21/9505
摘要： An inspecting device (100) includes: an irradiation part (12) for dividing pulsed light (LP1) emitted from a femtosecond laser (121) into pump light for measurement (LP13) and probe light for measurement (LP11), to irradiate a solar cell (9); a detection part for detecting an electromagnetic wave (LT1) emitted from the solar cell (9) in accordance with the irradiation with the probe light for measurement (LP11); and a delay part for measurement (14A) for delaying the time of arrival of the probe light for measurement (LP11) at the solar cell (9) relatively to the pump light for measurement (LP13). The irradiation part (12) is provided with a galvano mirror (125) for scanning with the probe light for measurement (LP11) a wide range (R11) which is wider than an irradiated range (pump light spot (SP13)) being irradiated with the pump light for measurement (LP13) in a solar cell (9).
摘要翻译：检查装置（100）包括：照射部（12），将从飞秒激光器（121）射出的脉冲光（LP1）分割为测定用泵浦光（LP13）和测定用探测光（LP11），照射太阳光细胞（9）; 检测部分，用于根据用于测量的探测光（LP11）的照射来检测从太阳能电池（9）发射的电磁波（LT1）;检测部分，和用于延迟太阳能电池（9）上的测量用探测光（LP11）相对于测量用泵浦光（LP13）的到达时间的测量延迟部（14A）。照射部（12）具备用于照射宽度比照射范围（泵浦光点（SP13））宽的宽范围（R11）的测量用探测光（LP11）进行扫描的电流镜（125）太阳能电池（9）中用于测量的泵浦光（LP13）。

7. 发明公开

EP2772750A1 Inspecting device and inspecting method 审中-公开
标题翻译：检查装置和检查方法
公开(公告)号：EP2772750A1
公开(公告)日：2014-09-03
申请号：EP14153847.0
申请日：2014-02-04
申请人： Dainippon Screen Mfg. Co., Ltd. , OSAKA UNIVERSITY
发明人： Ito, Akira , Nakanishi, Hidetoshi , Tonouchi, Masayoshi , Kawayama, Iwao
IPC分类号： G01N21/63 , G01R31/311 , G01N21/95 , G01N21/956
摘要： An inspecting device (100) inspects an inspecting target (9) that is a semiconductor device or a photo device. The inspecting device (100) includes: a stage (11) for holding an inspecting target (9); a femtosecond laser (121) for emitting pulsed light (LP11); a galvano mirror (125) for obliquely irradiating the inspecting target (9) with the pulsed light (LP11), while changing an optical path of the pulsed light (LP11), to scan the inspecting target (9) with the pulsed light; and a detection part (13) for detecting an electromagnetic wave (LT1) emitted non-coaxially with the pulsed light (LP11) from the inspecting target (9) in accordance with the illumination with the pulsed light (LP11).
摘要翻译：检查装置（100）检查作为半导体装置或照相装置的检查对象（9）。检查装置（100）包括：用于保持检查对象物（9）的载物台（11）。用于发射脉冲光（LP11）的飞秒激光器（121）; 用于在改变脉冲光（LP11）的光路的同时用脉冲光（LP11）倾斜地照射检查目标（9）以用脉冲光扫描检查目标（9）的电流镜（125）以及检测部（13），其根据脉冲光（LP11）的照射，检测从检查对象（9）与脉冲光（LP11）非同轴地射出的电磁波（LT1）。

8. 发明公开

EP2607945A3 Element, device and method for generating electromagnetic radiation in the terahertz domain 失效转让
标题翻译：在太赫范围内产生电磁辐射分量的装置和方法
公开(公告)号：EP2607945A3
公开(公告)日：2014-07-30
申请号：EP12184055.7
申请日：2012-09-12
申请人： Dainippon Screen Mfg. Co., Ltd. , OSAKA UNIVERSITY
发明人： Nakanishi, Hidetoshi , Tonouchi, Masayoshi
IPC分类号： G02F1/015 , H01Q1/00 , G02F1/01 , G01N21/63 , G01N21/64 , G01N21/95 , G01N21/956
CPC分类号： G01N21/64 , G01N21/63 , G01N21/9501 , G01N21/956 , G02F1/0126 , G02F1/015 , G02F2001/0152 , G02F2201/122 , G02F2201/30 , G02F2202/12 , G02F2203/13
摘要： An electromagnetic radiation generating device generates electromagnetic wave pulses (LT1) from a plane surface which receives pulsed light (LP1). The electromagnetic radiation generating device includes an electromagnetic radiation generating element (10), a light irradiating unit, and a reverse bias voltage applying circuit. The electromagnetic radiation generating element (10) includes a depletion layer forming body (90) formed by stacking a p-type silicon layer (14) and an n-type silicon layer (15) in a planar pattern having a pn junction (17), an antireflection film (16) and a light receiving surface electrode formed on the light receiving surface (10A) which is one surface of the depletion layer forming body (90), the light receiving surface electrode including a plurality of parallel electrode parts (121) that are equally spaced while the distance is maintained between the parallel electrode parts (121), the distance corresponding to the wavelength of the electromagnetic wave pulses (LT1) generated from the depletion layer forming body (90) and a rear surface electrode (13) formed on the rear surface (10B) which is the opposite surface of the depletion layer forming body (90). The reverse bias voltage applying circuit applies a voltage to bring a depletion layer formed in the depletion layer forming body into a reverse biased condition through the light receiving surface electrode and the rear surface electrode (13).

9. 发明授权

EP2546634B1 Inspection apparatus and inspection method 有权
公开(公告)号：EP2546634B1
公开(公告)日：2019-04-17
申请号：EP12170803.6
申请日：2012-06-05
申请人： SCREEN Holdings Co., Ltd. , OSAKA UNIVERSITY
发明人： Nakanishi, Hidetoshi , Tonouchi, Masayoshi , Kawayama, Iwao
IPC分类号： G01N21/35 , G01R31/26

10. 发明授权

EP2631635B1 Inspection apparatus and inspection method 有权
标题翻译：测试者和测试方法
公开(公告)号：EP2631635B1
公开(公告)日：2016-10-19
申请号：EP13153055.2
申请日：2013-01-29
申请人： SCREEN Holdings Co., Ltd. , OSAKA UNIVERSITY
发明人： Nakanishi, Hidetoshi , Tonouchi, Masayoshi , Kawayama, Iwao
IPC分类号： G01N21/95 , G01R31/26 , H02S50/10
CPC分类号： G01R31/2607 , G01N21/9501 , H02S50/10

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