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    • 7. 发明公开
    • HIGH-DIELECTRIC FILM
    • HOCH-DIELEKTRISCHER电影
    • EP2527393A1
    • 2012-11-28
    • EP11734555.3
    • 2011-01-11
    • Daikin Industries, Ltd.
    • TATEMICHI, MayukoTAKANO, NanakoOTA, MiharuYOKOTANI, KoujiKOMATSU, NobuyukiMUKAI, EriKOH, Meiten
    • C08J5/18C08K3/20C08L27/16H01B3/00H01G4/18H01G4/20
    • H01B3/445C08J5/18C08J2327/16H01G4/1209H01G4/1254H01G4/18H01G4/186H01G4/20H01G4/206
    • The present invention provides a high dielectric film comprising: a film-forming resin (A); and inorganic particles (B), wherein the film-forming resin (A) contains a vinylidene fluoride resin (a1), an amount of the inorganic particles (B) is not less than 0.01 parts by mass and less than 10 parts by mass for each 100 parts by mass of the film-forming resin (A), and the inorganic oxide particles (B) is at least one selected from the group consisting of: (B1) inorganic oxide particles of a metallic element of Group 2, 3, 4, 12, or 13 of the Periodic Table, or inorganic oxide composite particles of these; (B2) inorganic composite oxide particles represented by formula (1) :

              M 1 a1 N b1 O c1

      wherein M 1 represents a metallic element of Group 2, N represents a metallic element of Group 4, a1 represents 0.9 to 1.1, b1 represents 0.9 to 1.1, c1 represents 2.8 to 3.2, and the numbers of M 1 and N each may be more than 1; and (B3) inorganic oxide composite particles of an oxide of a metallic element of Group 2, 3, 4, 12, or 13 of the Periodic Table and silicon oxide. The film has improved volume resistivity while maintaining a high dielectric constant owing to a VdF resin.
    • 本发明提供一种高介电膜,包括:成膜树脂(A); 和无机粒子(B),其中成膜树脂(A)含有偏二氟乙烯树脂(a1),无机颗粒(B)的量不小于0.01质量份且小于10质量份,对于 每100质量份成膜树脂(A)和无机氧化物颗粒(B)是选自以下的至少一种:(B1)第2,3组金属元素的无机氧化物颗粒, 4,12或13,或这些的无机氧化物复合颗粒; (B2)由式(1)表示的无机复合氧化物颗粒:€ƒ€ƒ€ƒ€ƒ€ƒM1 a1 N b1 O c1其中M 1表示第2组的金属元素,N表示 第4族的金属元素,a1表示0.9〜1.1,b1表示0.9〜1.1,c1表示2.8〜3.2,M 1和N的数可以分别大于1, 和(B3)元素周期表第2,3,4,12或13族金属元素的氧化物的无机氧化物复合颗粒和氧化硅。 由于VdF树脂,该膜具有改善的体积电阻率,同时保持高的介电常数。