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1. 发明公开

EP0702221A2 One-chip integrated sensor 失效
标题翻译：无铅芯片内置传感器
公开(公告)号：EP0702221A2
公开(公告)日：1996-03-20
申请号：EP95202247.3
申请日：1995-08-21
申请人： DELCO ELECTRONICS CORPORATION
发明人： Sparks, Douglas Ray
IPC分类号： G01L9/06 , G01P15/08
CPC分类号： B81C1/00246 , B81C2203/0742 , G01L9/0042 , G01L9/0054 , G01P15/0802 , G01P2015/0828 , Y10S148/135
摘要： A method concurrently forms a micromachine element (54) and an integrated circuit device (12) on the same substrate (18), such that their fabrication requires a minimal number of processing steps. The method can form sensing devices, such as accelerometers (110) and pressure sensors (54) which utilise a small micromachine element, such as a bridge (54), cantilevered beam, suspended mass (60), membrane or capacitive element that is supported over a cavity (22) formed in the silicon substrate (18). Piezoresistors (14) used to detect the deflection of the micromachine element (54, 60) are formed simultaneously with elements of the integrated circuit devices (12), such that a minimal number of processing steps are required.
摘要翻译：一种方法在同一衬底（18）上同时形成微机械元件（54）和集成电路器件（12），使得其制造需要最少数量的处理步骤。该方法可以形成诸如加速度计（110）和压力传感器（54）的感测装置，所述加速度计（110）和压力传感器（54）利用小的微机械元件，例如桥（54），悬臂梁，悬挂质量（60），膜或电容元件在形成在硅衬底（18）中的腔（22）之上。用于检测微机械元件（54,60）的偏转的压电晶体管（14）与集成电路器件（12）的元件同时形成，使得需要最少数量的处理步骤。

2. 发明公开

EP0624900A3 Method of micro-machining an integrated sensor on the surface of a silicon wafer 失效
标题翻译：的微机械加工出集成在硅本体传感器的顶部平坦的方法。
公开(公告)号：EP0624900A3
公开(公告)日：1997-10-08
申请号：EP94201062.0
申请日：1994-04-18
申请人： DELCO ELECTRONICS CORPORATION
发明人： Sparks, Douglas Ray , Healton, Robert Lawrence , Brown, Ronald Eugene , Christenson, John Carl
IPC分类号： H01L21/76 , H01L21/36
CPC分类号： B81C1/00246 , B81C2203/0735 , G01J5/045 , G01L9/0042 , G01P15/0802 , G01P2015/0828 , H01L21/3065 , H01L21/764
摘要： A method for micro-machining the surface of a silicon substrate (10,14) which encompasses a minimal number of processing steps. The method involves a preferential etching process in which a chlorine plasma-etching is capable of laterally etching an N+ buried layer (12) beneath the surface of the bulk substrate (10,14). Such a method is particularly suitable for forming sensing devices which include a small micro-machined element (18), such as a bridge, cantilevered beam, membrane, suspended mass or capacitive element, which is supported over a cavity (22) formed in a bulk silicon substrate (10,14). The method also permits the formation of such sensing devices on the same substrate as their controlling integrated circuits. The method can optimise the dimensional characteristics of the micro-machined element (18) or encapsulate the micro-machined element (18).

3. 发明公开

EP0702221A3 One-chip integrated sensor 失效
标题翻译：上的芯片上集成传感器
公开(公告)号：EP0702221A3
公开(公告)日：1997-05-21
申请号：EP95202247.3
申请日：1995-08-21
申请人： DELCO ELECTRONICS CORPORATION
发明人： Sparks, Douglas Ray
IPC分类号： G01L9/06 , G01P15/08
CPC分类号： B81C1/00246 , B81C2203/0742 , G01L9/0042 , G01L9/0054 , G01P15/0802 , G01P2015/0828 , Y10S148/135
摘要： A method concurrently forms a micromachine element (54) and an integrated circuit device (12) on the same substrate (18), such that their fabrication requires a minimal number of processing steps. The method can form sensing devices, such as accelerometers (110) and pressure sensors (54) which utilise a small micromachine element, such as a bridge (54), cantilevered beam, suspended mass (60), membrane or capacitive element that is supported over a cavity (22) formed in the silicon substrate (18). Piezoresistors (14) used to detect the deflection of the micromachine element (54, 60) are formed simultaneously with elements of the integrated circuit devices (12), such that a minimal number of processing steps are required.

4. 发明公开

EP0624900A2 Method of micro-machining an integrated sensor on the surface of a silicon wafer 失效
标题翻译： Verfahren zum Mikro-Bearbeiten eines in dem Oberflach einesSiliziumkörpersintegrierten Sensors。
公开(公告)号：EP0624900A2
公开(公告)日：1994-11-17
申请号：EP94201062.0
申请日：1994-04-18
申请人： DELCO ELECTRONICS CORPORATION
发明人： Sparks, Douglas Ray , Healton, Robert Lawrence , Brown, Ronald Eugene , Christenson, John Carl
IPC分类号： H01L21/76 , H01L21/36
CPC分类号： B81C1/00246 , B81C2203/0735 , G01J5/045 , G01L9/0042 , G01P15/0802 , G01P2015/0828 , H01L21/3065 , H01L21/764
摘要： A method for micro-machining the surface of a silicon substrate (10,14) which encompasses a minimal number of processing steps. The method involves a preferential etching process in which a chlorine plasma-etching is capable of laterally etching an N+ buried layer (12) beneath the surface of the bulk substrate (10,14). Such a method is particularly suitable for forming sensing devices which include a small micro-machined element (18), such as a bridge, cantilevered beam, membrane, suspended mass or capacitive element, which is supported over a cavity (22) formed in a bulk silicon substrate (10,14). The method also permits the formation of such sensing devices on the same substrate as their controlling integrated circuits. The method can optimise the dimensional characteristics of the micro-machined element (18) or encapsulate the micro-machined element (18).
摘要翻译：一种用于微加工包含最少数目的处理步骤的硅衬底（10,14）的表面的方法。该方法包括优先蚀刻工艺，其中氯等离子体蚀刻能够横向蚀刻在本体衬底（10,14）的表面下方的N +掩埋层（12）。这种方法特别适用于形成感测装置，其包括小型微加工元件（18），诸如桥，悬梁，膜，悬吊质或电容元件，其被支撑在形成于体硅衬底（10,14）。该方法还允许在与其控制集成电路相同的衬底上形成这样的感测装置。该方法可以优化微加工元件（18）的尺寸特性或包封微加工元件（18）。

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