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1. 发明授权

EP2962325B1 PROCÉDÉ D'OBTENTION D'UNE SURFACE DE COLLAGE POUR COLLAGE DIRECT ET STRUCTURE CORRESPONDANTE 有权
标题翻译：用于获得用于直接结合和相应结构的结合表面的方法
公开(公告)号：EP2962325B1
公开(公告)日：2016-11-16
申请号：EP14708622.7
申请日：2014-02-12
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives
发明人： BENAISSA, Lamine , GONDCHARTON, Paul , IMBERT, Bruno
IPC分类号： H01L33/00 , H01L23/00 , H01L21/18
CPC分类号： H01L24/83 , H01L21/187 , H01L33/0079 , H01L2224/83031 , H01L2224/83047 , H01L2924/12041 , H01L2924/12043 , H01L2924/157 , Y10T428/12493 , Y10T428/12528

3. 发明公开

EP3005408A1 PROCÉDÉ D'ASSEMBLAGE DE DEUX SUBSTRATS DE NATURE DIFFÉRENTE VIA UNE COUCHE INTERMÉDIAIRE DUCTILE 有权
标题翻译：方法用于连接两个不同的基材使用纹理的中间层韧性
公开(公告)号：EP3005408A1
公开(公告)日：2016-04-13
申请号：EP14726167.1
申请日：2014-05-26
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives
发明人： IMBERT, Bruno , BENAISSA, Lamine , GONDCHARTON, Paul
IPC分类号： H01L21/18
CPC分类号： H01L24/83 , H01L21/187 , H01L2224/83203 , H01L2224/83895 , H01L2924/10253 , H01L2924/10335 , H01L2924/3511
摘要： The invention relates to a method for manufacturing a heterostructure (H), comprising the following steps: - placing a first substrate (1) with a first thermal expansion coefficient in contact with a second substrate (3) with a thermal expansion coefficient different from said first thermal expansion coefficient, - annealing the assembly formed by putting the first substrate and the second substrate in contact, - after annealing, returning said assembly to ambient temperature, characterized by: - providing, before said placement in contact, at least one intermediate layer (2) on the surface of at least one of the first and second substrates, said at least one intermediate layer being made from a ductile material during the annealing and return to ambient temperature steps, - performing the placement in contact with at the least one intermediate layer inserted between the first and second substrates, - during the return to ambient temperature, applying outside pressure to said assembly in order to keep it compressed (TC, C).
摘要翻译：一种用于制造异质结构的方法，包括：使具有热膨胀和热膨胀的不同的第二系数的第二基板的第一系数的第一基板; 退火在组件通过接触第一基板和所述第二基板形成的; 退火后，返回所述组件至室温; 提供，所述接触之前，在第一和第二基板中的至少一个，所述至少一个中间层的表面的至少一个中间层的材料制成的所有其退火期间延性和恢复至室温的; 执行与夹在第一和第二基板之间的至少一个中间层的接触; 在返回到室温，适用于外压的组件，以保持它的压缩。

4. 发明公开

EP3207564A1 PROCÉDÉ DE COLLAGE DIRECT VIA DES COUCHES MÉTALLIQUES PEU RUGUEUSES 有权
标题翻译： PROCÉDÉDE COLLAGE直接通过DES DES COUCHESMÉTALLIQUESPEU RUGUUSES
公开(公告)号：EP3207564A1
公开(公告)日：2017-08-23
申请号：EP15780848.6
申请日：2015-10-14
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives
发明人： GONDCHARTON, Paul , BENAISSA, Lamine , IMBERT, Bruno
IPC分类号： H01L21/58
CPC分类号： H01L24/83 , H01L21/187 , H01L24/27 , H01L24/29 , H01L24/32 , H01L2224/2745 , H01L2224/278 , H01L2224/29082 , H01L2224/29124 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29166 , H01L2224/2918 , H01L2224/29186 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/83054 , H01L2224/83092 , H01L2224/83099 , H01L2224/83193 , H01L2224/83895 , H01L2924/04941 , H01L2924/04953 , H01L2924/10253 , H01L2924/1068 , H01L2924/20102 , H01L2924/00014
摘要： The invention relates to a method for assembling a first substrate (1) and a second substrate (3) via metal adhesion layers (2, 4), said method comprising the steps of: depositing, on the surface of each of the first and second substrates (1, 3), a metal layer (2, 4) with a thickness controlled such as to limit the surface roughness of each of the deposited metal layers to below a roughness threshold; exposing the metal layers deposited on the surface of the first and second substrates to the air; directly adhering the first and second substrates by placing the deposited metal adhesion layers in contact, the surface roughness of the contacted layers being that obtained at the end of the depositing step. The adhesion can be carried out in the air, at atmospheric pressure and at room temperature, without applying pressure to the assembly of the first and second substrates resulting from directly contacting the deposited metal adhesion layers.
摘要翻译：一种用于经由金属粘合层组装第一基板和第二基板的方法，该方法包括：在第一和第二基板中的每一个的表面上沉积金属层，该金属层的厚度被控制以限制每个沉积的表面粗糙度金属层低于粗糙度阈值; 将沉积在第一和第二衬底的表面上的金属层暴露于空气; 通过使沉积的金属粘附层接触来直接粘附第一和第二基底，接触层的表面粗糙度是在沉积结束时获得的。可以在空气中，大气压力和室温下进行粘合，而不会对由于直接接触沉积的金属粘合层而导致的第一和第二基底的组件施加压力。

5. 发明公开

EP3161178A1 PROCEDE DE PASSIVATION ET PROCEDE DE COLLAGE DIRECT DE COUCHES DE TUNGSTENE 有权
标题翻译：威尔士公民事务委员会（DIREKTES KLEBEVERFAHREN）
公开(公告)号：EP3161178A1
公开(公告)日：2017-05-03
申请号：EP15732200.9
申请日：2015-06-22
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives
发明人： BENAISSA, Lamine , GONDCHARTON, Paul , IMBERT, Bruno
IPC分类号： C23C14/00 , C23C14/02 , C23C14/06 , C23C14/58 , H01L21/18 , H01L21/20 , H01L21/768 , H01L23/00 , H01L21/60 , C23C14/08
CPC分类号： H01L24/83 , C22F1/18 , C23C14/0036 , C23C14/025 , C23C14/06 , C23C14/083 , C23C14/165 , C23C14/3414 , C23C14/5806 , H01L21/187 , H01L21/2855 , H01L21/76834 , H01L21/76898 , H01L23/53266 , H01L24/80 , H01L25/50 , H01L2224/05184 , H01L2224/05186 , H01L2224/80896 , H01L2924/01074 , H01L2924/00014
摘要： Process for forming and passivating a tungsten layer, comprising the following steps consisting in: a) depositing (S1), by PVD deposition, a tungsten layer on a substrate; and b) depositing (S2) by PVD deposition, a tungsten oxide passivation layer on the tungsten layer, by reactive sputtering in a plasma containing dioxygen, the tungsten oxide layer as deposited being amorphous and having a resistivity of between 5 × 10
-2 and 5 × 10
-3 Ω.cm, the substrate being kept in an inert atmosphere between step a) and step b).
摘要翻译：用于形成和钝化钨层的方法，包括以下步骤：a）通过PVD沉积沉积（S1）钨基层上的钨层; 和b）通过PVD淀积沉积（S2），钨层上的氧化钨钝化层，通过在含有双氧的等离子体中的反应性溅射，沉积的氧化钨层是无定形的，电阻率介于5×10-2和 5×10 -3Ω.cm，基板在步骤a）和步骤b）之间保持在惰性气氛中。

6. 发明公开

EP2962325A1 PROCÉDÉ D'OBTENTION D'UNE SURFACE DE COLLAGE POUR COLLAGE DIRECT 有权
标题翻译：方法生产表面不承担任何直接绑定和相关结构
公开(公告)号：EP2962325A1
公开(公告)日：2016-01-06
申请号：EP14708622.7
申请日：2014-02-12
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives
发明人： BENAISSA, Lamine , GONDCHARTON, Paul , IMBERT, Bruno
IPC分类号： H01L21/18
CPC分类号： H01L24/83 , H01L21/187 , H01L33/0079 , H01L2224/83031 , H01L2224/83047 , H01L2924/12041 , H01L2924/12043 , H01L2924/157 , Y10T428/12493 , Y10T428/12528
摘要： The invention relates to a process for obtaining a bonding surface for direct bonding. The process comprises: a) providing a substrate (1) based on a sintered metal having a base surface (2) with an RMS roughness lower than 6 nanometres and a PV roughness lower than 100 nanometres; b) bombarding said base surface (2) with ionic species; c) depositing a metal layer (4) on said base surface (2); and d) carrying out a mechanical and/or chemical polish of an exposed surface of the metal layer (4). The invention also relates to a structure (800) comprising a substrate (1) based on a sintered metal the base surface (2) of which is at least partially formed from a metal comprising ionic species implanted by bombardment of the base surface (2), and a metal layer (4) of identical chemical composition to that of the metal base substrate (1) and comprising a bonding surface (500) with an RMS roughness lower than 0.6 nanometres and a PV roughness lower than 10 nanometres.

7. 发明授权

EP3326197B1 PROCÉDÉ DE COLLAGE DIRECT 有权
公开(公告)号：EP3326197B1
公开(公告)日：2019-07-24
申请号：EP16742349.0
申请日：2016-06-29
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives
发明人： GONDCHARTON, Paul , BENAISSA, Lamine , IMBERT, Bruno , RODRIGUEZ, Guillaume , SABBIONE, Chiara
IPC分类号： H01L21/20 , H01L21/02 , H01L23/00

8. 发明授权

EP3005408B1 PROCÉDÉ D'ASSEMBLAGE DE DEUX SUBSTRATS DE NATURE DIFFÉRENTE VIA UNE COUCHE INTERMÉDIAIRE DUCTILE 有权
标题翻译： PROCÉDÉD'ASSEMBLAGE DE DEUX SUBSTRATS DE NATUREDIFFÉRENTEVIA UNE COUCHEINTERMÉDIAIREDUCTILE
公开(公告)号：EP3005408B1
公开(公告)日：2017-08-09
申请号：EP14726167.1
申请日：2014-05-26
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives
发明人： IMBERT, Bruno , BENAISSA, Lamine , GONDCHARTON, Paul
IPC分类号： H01L23/00 , H01L21/18
CPC分类号： H01L24/83 , H01L21/187 , H01L2224/83203 , H01L2224/83895 , H01L2924/10253 , H01L2924/10335 , H01L2924/3511

9. 发明公开

EP3111467A2 PROCEDE DE REALISATION D'UNE STRUCTURE PAR ASSEMBLAGE D'AU MOINS DEUX ELEMENTS PAR COLLAGE DIRECT 审中-公开
标题翻译：一种用于生产结构的安排至少两个元件通过直接连接胶
公开(公告)号：EP3111467A2
公开(公告)日：2017-01-04
申请号：EP15706806.5
申请日：2015-02-26
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives
发明人： GONDCHARTON, Paul , BENAISSA, Lamine , IMBERT, Bruno , MORICEAU, Hubert
IPC分类号： H01L21/60 , H01L21/768 , H01L21/98 , H01L23/485
CPC分类号： H01L24/83 , H01L21/185 , H01L24/03 , H01L24/05 , H01L24/27 , H01L24/29 , H01L24/80 , H01L25/0657 , H01L25/50 , H01L2224/0345 , H01L2224/03452 , H01L2224/0381 , H01L2224/03845 , H01L2224/05073 , H01L2224/0508 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05184 , H01L2224/05186 , H01L2224/05571 , H01L2224/05647 , H01L2224/2745 , H01L2224/2755 , H01L2224/27845 , H01L2224/29147 , H01L2224/80055 , H01L2224/80357 , H01L2224/8083 , H01L2224/80895 , H01L2224/80896 , H01L2224/8092 , H01L2224/80948 , H01L2224/83895 , H01L2225/06524 , H01L2924/01005 , H01L2924/01006 , H01L2924/01008 , H01L2924/01015 , H01L2924/01016 , H01L2924/01017 , H01L2924/04941 , H01L2924/04953 , H01L2924/00014 , H01L2924/049 , H01L2924/00012
摘要： Process for producing a structure by direct adhesive bonding of two elements comprising the production of the elements to be assembled and the assembly of said elements, in which the production of the elements to be assembled comprises the steps: - deposition on a substrate of a TiN layer by physical vapour deposition, - deposition of a copper layer on the TiN layer, and in which the assembly of said elements comprises the steps: - polishing the surfaces of the copper layers intended to come into contact so that they have a roughness of less than 1 nm RMS and hydrophilic properties, - bringing said surfaces into contact, - storing said structure at atmospheric pressure and at ambient temperature.
摘要翻译：待组装和元件的组装生产的元件的：一种用于通过两个元件，所述方法包括直接键合制造结构的方法。生产的元件的组装，包括：在TiN层上的铜层的通过物理气相沉积TiN层，和沉积的底物沉积。的元件的组件包括：抛光预期会接触，从而thatthey具有小于1个纳米RMS和亲水性能的粗糙度铜层的表面，使表面接触，并在大气压下和在存放结构环境温度。

10. 发明公开

EP2965346A1 PROCÉDÉ DE RÉALISATION D'UN COLLAGE DIRECT MÉTALLIQUE CONDUCTEUR 审中-公开
标题翻译： VERFAHREN ZUR HERSTELLUNG EINERLEITFÄHIGENDIREKTMETALLVERBINDUNG
公开(公告)号：EP2965346A1
公开(公告)日：2016-01-13
申请号：EP14713216.1
申请日：2014-03-05
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives
发明人： GONDCHARTON, Paul , BENAISSA, Lamine , IMBERT, Bruno
IPC分类号： H01L21/18 , H01L25/065
摘要： The invention comprises the steps of -a) Providing a first substrate (1) covered by a metal layer (2) and a second substrate (3) covered by a metal layer (4), -b) Bringing the metal layers (2, 4) into direct contact in such a way as to form a bonding interface (6) comprising metal material bridges (5) separated by cavities fluidly connected together, -d) Submerging the bonding interface (6) in an oxidising fluid (8) in such a way as to form a metal oxide at least partially filling the cavities and metal/metal oxide/metal contact areas (9). The invention also concerns a structure (100) comprising a first substrate (1), a first metal layer (2), a second metal layer (4) forming a bonding interface (6) with the first metal layer (2), and a second substrate (3), the bonding interface (6) comprising metal material bridges (5) separated by cavities, a metal oxide at least partially filling the cavities and metal/metal oxide/metal contact areas (9).
摘要翻译：一种方法包括：a）提供由金属层覆盖的第一衬底和被金属层覆盖的第二衬底; b）使金属层直接接触，以便形成具有金属材料的接合界面彼此连接，d）将结合界面浸入氧化流体中，以便形成至少部分填充空腔和金属/金属氧化物/金属接触区域的金属氧化物。还提供一种结构，其具有第一基板，第一金属层，与第一金属层形成接合层的第二金属层和第二基板，所述接合界面具有：由空腔分开的金属材料桥，部分金属氧化物填充空腔和金属/金属氧化物/金属接触区域。

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