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    • 7. 发明公开
    • Resist underlayer composition and method of manufacturing semiconductor integrated circuit device using the same
    • 树脂底涂剂组合物和制造半导体集成电路装置,使得的方法
    • EP2204399A2
    • 2010-07-07
    • EP09180744.6
    • 2009-12-24
    • Cheil Industries Inc.
    • Cho, Hyeon-MoKim, Sang-KyunWoo, Chang-SooKim, Mi-YoungKoh, Sang-RanYun, Hiu-ChanLee, Woo-JinKim, Jong-Seob
    • C08G77/50C08G77/52C08L83/04C08L83/14C09D183/04C09D183/14C08K5/09C08K5/19C08K5/42G03F7/11H01L21/027H01L21/312
    • G03F7/0752C08G77/12C08G77/14C08G77/16C08G77/18C08G77/20C08G77/24C08G77/26C08G77/50C08G77/52C08G77/70C08K5/0008C08L83/04C08L83/14C09D183/04C09D183/14G03F7/0757G03F7/09G03F7/091G03F7/094G03F7/11G03F7/30G03F7/36
    • Disclosed is a resist underlayer composition that includes
      (i) an organosilane condensation polymerization product obtained from at least one of the compounds of the Chemical Formula 1 and 2, and at least one of the compounds of the Chemical Formula 3 to 5; or
      (ii) an organosilane condensation polymerization product including a repeating unit represented by the Chemical Formula 6; and
      a solvent:

               [Chemical Formula 1]     [R 1 ] 3 Si-[Ph 1 ] l -Si[R 2 ] 3

               [Chemical Formula 2]     [R 1 ] 3 Si-[Ph 1 ] m -Ph 2

               [Chemical Formula 3]     [R 1 ] 3 Si- CH 2n -R 3

               [Chemical Formula 4]     [R 1 ] 3 Si-R 4

               [Chemical Formula 5]     [R 1 ] 3 Si-X-Si[R 2 ] 3

               [Chemical Formula 6]     (SiO 1.5 -[Ph 1 ] l -SiO 1.5 ) a (Ph 2 -[Ph 1 ] m -SiO 1.5 ) b (R 3 - CH 2n -SiO 1.5 ) c (R 4 -SiO 1.5 ) d SiO 1.5 -X-SiO 1.5 ) e ,

      wherein 0≤a≤0.99, 0≤b≤0.99, 0.01≤a+b≤0.99, and 0≤c≤0.99, 0≤d≤0.99, 0≤e≤0.99, 0.01≤c+d+e≤0.99, a+b+c+d+e=1.
      In the above Chemical Formula 1 to 6, Ph 1 , Ph 2 , R 1 to R 4 , X, I, m, and n are the same as in the specification.
    • 公开了一种抗蚀剂下层组合物确实包括从所述化学式1和2的化合物中的至少一个,并且所述化学式3〜5的化合物中的至少一种(i)得到的有机硅烷缩聚产物; 或(ii)有机硅烷缩聚产物包含由化学式6表示的重复单元; 和溶剂:€€ƒƒƒ€€€ƒƒƒ€€€ƒƒ[化学式1]ƒ€€€ƒƒƒ€€ƒ[R 1] 3 SI-[PH 1]升-Si [ R 2] 3€€ƒƒƒ€€€ƒƒƒ€€€ƒƒ[化学式2]ƒ€€€ƒƒƒ€€ƒ[R 1] 3 SI-[PH 1]米-Ph 2 €€ƒƒƒ€€€ƒƒƒ€€€ƒƒ[化学式3]ƒ€€€ƒƒƒ€€ƒ[R 1] 3 SI-CH 2n个-R 3€€ƒƒƒ€€ ƒ€ƒ€ƒ€ƒ€ƒ[化学式4]€ƒ€ƒ€ƒ€ƒ€ƒ[R 1] 3的Si-R 4€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ[ 化学式5]€ƒ€ƒ€ƒ€ƒ€ƒ[R 1] 3的Si-X-的Si [R 2] 3€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ[化学式6] €€ƒƒƒ€€€ƒƒ(SIO 1.5 - [PH 1]升-SiO 1.5)A(PH 2 - [PH 1]中号-SiO 1.5)b(,R 3 - CH 2N -SiO 1.5)C( ,R 4 -SiO 1.5)δ的SiO 1.5 -X-的SiO 1.5)E,worin 0‰‰¤0.99¤A,0‰‰¤B¤0.99,00:01‰‰¤0.99¤A+ b和0‰‰¤c ¤0.99,0‰‰¤d¤0.99,0‰‰¤e¤0.99,12点01‰¤c+ D + E‰¤0.99,A + b + C + D + E = 1。 在上面的化学式1〜6中,Ph 1中,Ph 2,R 1至R 4,X,I,m和n是相同的如本说明书中。