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    • 5. 发明公开
    • Optical semiconductor device with wavelength selectivity and method for amplifying or emitting light using the same
    • 波长选择性的光学半导体器件和用于增强或使用相同的光的发射方法。
    • EP0466144A2
    • 1992-01-15
    • EP91111519.4
    • 1991-07-10
    • CANON KABUSHIKI KAISHA
    • Ono, TakeoOkuda, Masahiro
    • H01S3/103H01S3/25H01S3/085G02F1/015H04B10/00
    • H04B10/2914H01S5/06206H01S5/1003H01S5/12H01S5/3428H01S5/5045
    • An optical semiconductor device with wavelength selectivity comprises a substrate (21), a collector layer (22) provided on said substrate and composed of a semiconductor having a first conductive type, a multiple quantum well layer (23) provided on said collector layer, a base layer (24,25,26) provided on said multiple quantum well layer (23) and composed of a semiconductor having a second conductive type, said base layer consisting of an active layer (25), and first and second semiconductor layers (24,26) with said active layer sandwiched and having a wider band gap than said active layer, said base layer (24,25,26) and said multiple quantum well layer (23) propagating the light, an emitter layer (27) provided on said base layer and composed of a semiconductor having the first conductive type, and a collector electrode (30), a base electrode (29,29') and an emitter electrode (28) electrically connected to said collector layer (22), base layer (24,25,26) and emitter layer (27), respectively.
    • 具有波长选择性的光学半导体器件包括:设置在所述集电体层上设置在所述基片和具有第一导电类型,多量子阱层(23)的半导体构成的基板(21),集电极层(22),一个 设置在所述多重量子阱层(23)上,并具有第二导电类型的半导体构成的基础层(24,25,26),所述基础层由活性层(25),以及第一和第二半导体层(24 ,26)与所述有源层夹和具有比抗蚀剂,所述活性层,所述基材层(24,25,26)和所述多量子阱层(23)中传播的光到发射极层(27的带隙),设置在 所述基础层和具有第一导电类型的半导体,和集电极电极(30),基极电极(29,29“)组成并至发射电极(28)电连接到所述集电极层(22),基极层 (24,25,26)和发射极层(27),相对于 结构延续。