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1. 发明公开

EP0582397A2 CVD diamond material for radiation detector and process for making same 失效
标题翻译： CVD-Diamant-Materialfüreinen Strahlungsdetektor und Herstellungsverfahren。
公开(公告)号：EP0582397A2
公开(公告)日：1994-02-09
申请号：EP93305615.2
申请日：1993-07-16
申请人： CRYSTALLUME
发明人： Plano, Mary Anne , Landstrass, Maurice I
IPC分类号： G01T1/202 , C23C16/26
CPC分类号： C23C16/274 , C23C16/277 , C23C16/511 , G01T1/202 , G01T1/26
摘要： CVD diamond films useful for radiation detectors comprise diamond films having an average grain size of at least 7 microns and contain minimal hydrogen, which may be grown on substrates having deposited diamond films of a similar grain size. The diamond films of the present invention have a carrier mobility of at least 1,000 cm²/V-sec, a carrier lifetime of at least 100 psec and less than 200 nsec, yielding a collection distance of at least 10 microns at an electric field strength of 10⁴ V/cm, and a resistivity of at least 10¹⁰ Ω-cm. A surface radiation detector and a bulk radiation detector are fabricated using the CVD diamond materials of the present invention. A chemical-vapor-deposition method is disclosed for producing diamond materials suitable for use as radiation detectors according to the present invention. The diamond material of the present invention is grown on a suitable substrate material, such as large-grain polycrystalline diamond, single crystal diamond, diamond particulate composites and other non-diamond substrates that allow for large grain growth. A NIRIM style CVD reactor having a reactor chamber volume of about 300 in³, may be used. Microwave energy of 2.45 GHz at a power level of between about 1,400 to 1,900 watts is introduced to create a plasma in the region of a substrate holder and achieve a substrate temperature of between about 800-1,000°C. The reaction may be carried out in an atmosphere of 300 sccm of hydrogen, 3 sccm of methane, and 4.5 sccm of carbon monoxide at pressures from 90-100 Torr, and substrate temperatures of 800-1000° C.
摘要翻译：可用于辐射检测器的CVD金刚石膜包括平均晶粒尺寸至少为7微米的金刚石膜，并且含有最小的氢，其可以在具有相似晶粒尺寸的沉积金刚石膜的基底上生长。本发明的金刚石薄膜具有至少1000cm 2 / V-sec的载流子迁移率，至少100psec且小于200nsec的载流子寿命，在电流下产生至少10微米的收集距离场强为10 4 V / cm，电阻率为至少10 -3 OEGA-cm。使用本发明的CVD金刚石材料制造表面辐射检测器和体辐射检测器。公开了用于生产适合用作根据本发明的辐射检测器的金刚石材料的化学气相沉积方法。本发明的金刚石材料在合适的基底材料上生长，例如大晶粒多晶金刚石，单晶金刚石，金刚石颗粒复合材料和允许大晶粒生长的其它非金刚石基底。可以使用具有约300in 3的反应室容积的NIRIM型CVD反应器。引入功率水平在1,400至1900瓦之间的2.45GHz的微波能量，以在衬底保持器的区域中产生等离子体，并达到基底温度在约800-1000℃之间。反应可以在氢气为300sccm，甲烷为3sccm，一氧化碳为4.5sccm，气压为90-100乇，基板温度为800〜1000℃。

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