专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明公开

EP3831482A1 MICROFLUIDIC DEVICE COMPRISING LATERAL/VERTICAL TRANSISTOR STRUCTURES 有权转让
公开(公告)号：EP3831482A1
公开(公告)日：2021-06-09
申请号：EP20198800.3
申请日：2015-12-07
申请人： Berkeley Lights, Inc.
发明人： HOBBS, Eric, D. , VALLEY, Justin, K.
IPC分类号： B01L3/00 , B03C5/00
摘要： A microfluidic device can include a base an outer surface of which forms one or more enclosures for containing a fluidic medium. The base can include an array of individually controllable transistor structures each of which can comprise both a lateral transistor and a vertical transistor. The transistor structures can be light activated, and the lateral and vertical transistors can thus be photo transistors. Each transistor structure can be activated to create a temporary electrical connection from a region of the outer surface of the base (and thus fluidic medium in the enclosure) to a common electrical conductor. The temporary electrical connection can induce a localized electrokinetic force generally at the region, which can be sufficiently strong to move a nearby micro-object in the enclosure.

2. 发明授权

EP3229958B1 MICROFLUIDIC DEVICE COMPRISING LATERAL/VERTICAL TRANSISTOR STRUCTURES AND PROCESS OF MAKING AND USING SAME 有权
公开(公告)号：EP3229958B1
公开(公告)日：2020-09-30
申请号：EP15813662.2
申请日：2015-12-07
申请人： Berkeley Lights, Inc.
发明人： HOBBS, Eric, D. , VALLEY, Justin, K.
IPC分类号： B01L3/00 , B03C5/00

3. 发明公开

EP3229958A1 MICROFLUIDIC DEVICE COMPRISING LATERAL/VERTICAL TRANSISTOR STRUCTURES AND PROCESS OF MAKING AND USING SAME 有权
标题翻译：包含横向/纵向晶体管结构的微流体器件以及制造和使用相同的工艺
公开(公告)号：EP3229958A1
公开(公告)日：2017-10-18
申请号：EP15813662.2
申请日：2015-12-07
申请人： Berkeley Lights, Inc.
发明人： HOBBS, Eric, D. , VALLEY, Justin, K.
IPC分类号： B01L3/00 , B03C5/00
摘要： A microfluidic device can include a base an outer surface of which forms one or more enclosures for containing a fluidic medium. The base can include an array of individually controllable transistor structures each of which can comprise both a lateral transistor and a vertical transistor. The transistor structures can be light activated, and the lateral and vertical transistors can thus be photo transistors. Each transistor structure can be activated to create a temporary electrical connection from a region of the outer surface of the base (and thus fluidic medium in the enclosure) to a common electrical conductor. The temporary electrical connection can induce a localized electrokinetic force generally at the region, which can be sufficiently strong to move a nearby micro-object in the enclosure.
摘要翻译：微流体装置包括基座（200），基座（200）的外表面形成用于容纳流体介质的一个或多个外壳。该基座可以包括一个独立可控晶体管结构（206）的阵列，每个可以包括横向晶体管（252）和垂直晶体管（254）两者。晶体管结构可以是光激活的，并且横向和垂直晶体管因此可以是光电晶体管。可以激活每个晶体管结构以形成从基座的外表面的区域（并且因此外壳中的流体介质）到公共电导体（162）的临时电连接。临时电连接通常可以在该区域引起局部电动力，该电动力可以足够强以使附近的微小物体移动。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式