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1. 发明授权

EP3244537B1 METHOD FOR ELECTRICALLY AGING PMOS THIN-FILM TRANSISTOR 有权
公开(公告)号：EP3244537B1
公开(公告)日：2020-03-18
申请号：EP15876523.0
申请日：2015-04-09
申请人： BOE Technology Group Co., Ltd. , Ordos Yuansheng Optoelectronics Co., Ltd.
发明人： WANG, Jun , JIN, Xinxin , SUN, Liang , HAN, Yuebai , ZHANG, Guoqing
IPC分类号： H03K17/16 , G09G3/3233 , G09G3/00

2. 发明公开

EP3246908A1 METHOD AND DEVICE FOR CORRECTING HUE ERROR OF OLED DISPLAY PANEL AND DISPLAY DEVICE 有权
标题翻译：用于校正OLED显示面板和显示装置的色调错误的方法和装置
公开(公告)号：EP3246908A1
公开(公告)日：2017-11-22
申请号：EP15794447.1
申请日：2015-07-16
申请人： BOE Technology Group Co., Ltd. , Ordos Yuansheng Optoelectronics Co., Ltd.
发明人： HAN, Yuebai , LAI, Weilin , JIN, Xinxin , XUAN, Minghua
IPC分类号： G09G3/32
CPC分类号： H05B33/10 , G09G3/006 , G09G3/3208 , G09G2320/0242 , G09G2320/045 , G09G2360/145
摘要： A method and device for correcting a color shift of an OLED display panel, and a display device are disclosed. The method includes: performing an ageing treatment on the monochromatic luminescent devices in the OLED display panel; performing a luminescent lifetime attenuation test on the monochromatic luminescent devices after the ageing treatment respectively, and obtaining corresponding luminescent lifetime attenuation rates of the monochromatic luminescent devices; and performing an ageing treatment on the monochromatic luminescent device with rapidest luminescent lifetime attenuation rate again when differences between the luminescent lifetime attenuation rates of the monochromatic luminescent devices are greater than a preset threshold, until differences between the luminescent lifetime attenuation rates of the monochromatic luminescent devices are less than the preset threshold. The method effectively corrects the color shift phenomenon of display images of an OLED display product after long-term use.
摘要翻译：公开了一种用于校正OLED显示面板的色偏的方法和装置以及显示装置。该方法包括：对OLED显示面板中的单色发光器件进行老化处理; 分别对时效处理后的单色发光器件进行发光寿命衰减测试，得到单色发光器件的相应的发光寿命衰减率; 当单色发光器件的发光寿命衰减率之间的差值大于预设阈值时，再次对最快发光寿命衰减率的单色发光器件进行老化处理，直到单色发光器件的发光寿命衰减率小于预设的阈值。该方法有效地校正了长期使用后OLED显示器产品显示图像的色偏现象。

3. 发明公开

EP3244537A1 METHOD FOR ELECTRICALLY AGING PMOS THIN-FILM TRANSISTOR 有权
标题翻译： PMOS薄膜晶体管的电老化方法
公开(公告)号：EP3244537A1
公开(公告)日：2017-11-15
申请号：EP15876523.0
申请日：2015-04-09
申请人： BOE Technology Group Co., Ltd. , Ordos Yuansheng Optoelectronics Co., Ltd.
发明人： WANG, Jun , JIN, Xinxin , SUN, Liang , HAN, Yuebai , ZHANG, Guoqing
IPC分类号： H03K17/16
CPC分类号： H03K17/16 , G09G3/006 , G09G3/3233 , G09G2300/0819 , G09G2300/0833 , G09G2300/0861 , G09G2310/0254 , G09G2310/0289 , G09G2310/08 , G09G2320/0214
摘要： The present disclosure relates to a method of electrically aging a PMOS thin film transistor. The method includes applying a first voltage Vg with an amplitude of A volts to a gate of the PMOS thin film transistor; applying a second voltage Vs with an amplitude of (A-40) to (A-8) volts to a source of the PMOS thin film transistor; and applying a third voltage Vd with an amplitude of (A-80) to (A-16) volts to a drain of the PMOS thin film transistor. Application of the first voltage Vg, the second voltage Vs and the third voltage Vd is maintained for a predetermined time period, and Vd-Vs
摘要翻译：本公开涉及电学老化PMOS薄膜晶体管的方法。该方法包括将具有A伏的振幅的第一电压Vg施加到PMOS薄膜晶体管的栅极; （A-40）至（A-8）伏的幅度的第二电压Vs施加到PMOS薄膜晶体管的源极; （A-80）至（A-16）伏的幅度的第三电压Vd施加到PMOS薄膜晶体管的漏极。第一电压Vg，第二电压Vs和第三电压Vd的施加被保持预定的时间段，并且Vd-Vs <0。以这种方式实现PMOS薄膜晶体管的漏电流的减小而不改变薄膜晶体管的结构设计。

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