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1. 发明公开

EP4345901A1 DISPLAY SUBSTRATE AND DISPLAY PANEL 审中-实审
公开(公告)号：EP4345901A1
公开(公告)日：2024-04-03
申请号：EP21955406.0
申请日：2021-08-31
申请人： BOE Technology Group Co., Ltd.
发明人： WANG, Lizhong , YUAN, Guangcai , NING, Ce , HU, Hehe , YAO, Nianqi , XIE, Xin , HUANG, Yifang , LEI, Liping , XU, Chen
IPC分类号： H01L27/12 , H01L21/77 , G09G3/20
摘要： A display substrate and a display panel. The display substrate comprises a first gate driving circuit (G1) and a second gate driving circuit (G2), which are respectively arranged on a first side and a second side, opposite each other, of a display area (AA), wherein the first gate scan driving circuit (G1) comprises a plurality of first shift register units (G11), which are arranged in a first direction, each first shift register unit (G11) comprises a first thin-film transistor (T1), the first thin-film transistor (T1) comprises a first active layer (T11), and the first active layer (T11) comprises a metal oxide semiconductor material; the second gate scan driving circuit (G2) comprises a plurality of second shift register units (G21), which are arranged in the first direction, each second shift register unit (G21) comprises a second thin-film transistor (T2) having the same function as the first thin-film transistor (T1), the second thin-film transistor (T2) comprises a second active layer (T21), and the second active layer (T21) comprises a metal oxide semiconductor material; and the average turn-on current of at least one first thin-film transistor (T1) is Ion1, and the average turn-on current of at least one second thin-film transistor (T2) is Ion2, and Ion1 > Ion2. The display substrate has a simpler preparation process, and also has a better display effect.

2. 发明公开

EP4345909A1 OXIDE THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR, AND ELECTRONIC DEVICE 审中-实审
公开(公告)号：EP4345909A1
公开(公告)日：2024-04-03
申请号：EP22860534.1
申请日：2022-08-24
申请人： BOE Technology Group Co., Ltd.
发明人： WANG, Lizhong , YUAN, Guangcai , NING, Ce , HU, Hehe , YAO, Nianqi , XUE, Dapeng , DONG, Shuilang , LEI, Liping , WANG, Dongfang , LI, Zhengliang
IPC分类号： H01L29/423 , H01L21/34 , H01L21/443 , H01L29/51 , H01L29/786
摘要： Embodiments of the present disclosure provide an oxide thin film transistor and a manufacturing method therefor, and an electronic device. The oxide thin film transistor comprises a base substrate (21), a gate (22) and a metal oxide semiconductor layer (24) that are sequentially stacked on the base substrate (21), and a gate insulating layer (23) provided between the metal oxide semiconductor layer (24) and the gate (22), wherein the gate insulating layer (23) comprises a silicon oxide insulating layer (231) and a silicon nitride layer (232) that are stacked; the silicon nitride layer (232) is of a single-layer structure or comprises a plurality of silicon nitride sub layers that are sequentially stacked; the silicon oxide insulating layer (231) is provided between the silicon nitride layer (232) and the metal oxide semiconductor layer (24); and at least part of the region of the silicon nitride layer (232) satisfies that: an Si-H bond occupies an Si-N bond, and the percentage content of the sum of an N-H bond and the Si-H bond is not greater than 7%. The thin film transistor can solve the problem of bulging of the gate insulating layer by adjusting the structure of the gate insulating layer.

3. 发明公开

EP4207303A1 OXIDE THIN-FILM TRANSISTOR AND PREPARATION METHOD THEREFOR, AND DISPLAY DEVICE 审中-实审
公开(公告)号：EP4207303A1
公开(公告)日：2023-07-05
申请号：EP21946535.8
申请日：2021-06-25
申请人： BOE Technology Group Co., Ltd.
发明人： WANG, Lizhong , YUAN, Guangcai , NING, Ce , YAO, Nianqi , HU, Hehe , LEI, Liping , WANG, Dongfang , XUE, Dapeng , DONG, Shuilang , LI, Zhengliang
IPC分类号： H01L27/32
摘要： At least one embodiment of the present disclosure provides an oxide thin-film transistor, a display device, and a preparation method for an oxide thin-film transistor. The oxide thin-film transistor (100) comprises: a base substrate (101); an oxide semiconductor layer (105) provided on the base substrate (101); and an insulating layer (108) provided on the side of the oxide semiconductor layer (105) facing away from the base substrate (101). The insulating layer (108) is made of an oxide, and the insulating layer (108) comprises a first insulating layer (108b) and a second insulating layer (108a) that are stacked; the compactness of the second insulating layer (108a) is greater than that of the first insulating layer (108b), and the second insulating layer (108a) is further away from the base substrate (101) than the first insulating layer. In the embodiment of the present disclosure, at least the compactness and thickness of the first insulating layer and the second insulating layer are adjusted, and oxygen in the oxide semiconductor layer is fixed in the oxide semiconductor layer, such that the loss of an oxygen element in the oxide semiconductor layer during a subsequent high-temperature annealing process is reduced, thereby ensuring the stability of the characteristics of the oxide thin-film transistor.

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