专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明公开

EP2857550A1 Amine precursors for depositing graphene 审中-公开
标题翻译： Aminvorläuferzum Ablagern von Graphen
公开(公告)号：EP2857550A1
公开(公告)日：2015-04-08
申请号：EP13187091.7
申请日：2013-10-02
申请人： BASF SE , Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V.
发明人： Schwab, Matthias Georg , Müllen, Klaus , Sachdev, Herrmann , Ito, Yoshikazu
IPC分类号： C23C16/26 , C01B31/04
CPC分类号： H01L51/0002 , C01B32/186 , C23C16/26 , C23C16/30 , H01L51/002 , H01L51/003 , H01L51/0045 , H01L51/0558 , H01L51/42 , H01L51/50
摘要： The present invention relates to the use of an amine precursor of formula I

(X 1 -R 1 ) n -NH (3-n) (I)

or its ammonium salts for depositing a graphene film having a nitrogen content of from 0 to 65 % by weight on a substrate S1 by chemical vapor deposition (CVD),
wherein
R 1
is selected from
(a)
C 1 to C 10 alkanediyl, which may all optionally be interrupted by at least one of O, N H and NR 2 ,
(b)
alkenediyl, which may all optionally be interrupted by at least one of O, NH and NR 2 ,
(c)
alkynediyl, which may all optionally be interrupted by at least one of O, NH and NR 2 ,
(d)
C 6 to C 20 aromatic divalent moiety, and
(e)
CO and CH 2 CO,
X 1
is selected from H, OH, OR 2 , NH 2 , NHR 2 , or NR 2 2 , wherein two groups X 1 may together form a bivalent group X 2 being selected from a chemical bond, O, NH, or NR 2 ,
R 2
is selected from C 1 to C 10 alkyl and a C 6 to C 20 aromatic moiety which may optionally be substituted by one or more substituents X 1 ,
n
is 1, 2, or 3.
摘要翻译：本发明涉及式I的胺前体的用途ƒ€ƒ€ƒ€ƒ€ƒ€ƒ（X 1 -R 1）n -NH（3-n）€ƒ€ ƒ€ƒ（I）或其铵盐，用于通过化学气相沉积（CVD）在基板S1上沉积氮含量为0至65重量％的石墨烯膜，其中R 1选自（a） C 1至C 10烷二基，其可全部任选地被O，NH和NR 2中的至少一个中断，（b）烯二基，其均可任选被O，NH和NR 2中的至少一个中断，（c ）炔二基，其可全部任选被O，NH和NR 2，（d）C 6至C 20芳族二价部分中的至少一个中断，（e）CO和CH 2 CO，X 1选自H， OH，OR 2，NH 2，NHR 2或NR 2 2，其中两个基团X 1可以一起形成选自化学键，O，NH或NR 2的二价基团X 2，R 2选自C 1至C 10烷基和C 6至C 20芳族部分，其可任选地被取代 d由一个或多个取代基X 1，n是1,2或3。

IPRDB

热门服务

关于我们

友情链接

联系方式