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1. 发明公开

EP2105960A2 Improved adhesion to copper and copper electromigration resistance 有权转让
标题翻译：改进的粘合性铜对改进铜抗电迁移性
公开(公告)号：EP2105960A2
公开(公告)日：2009-09-30
申请号：EP09155899.9
申请日：2009-03-23
申请人： Air Products and Chemicals, Inc.
发明人： Vrtis, Raymond Nicholas , Matz, Laura M. , O'Neill, Mark Leonard
IPC分类号： H01L21/768 , C23C16/18
CPC分类号： H01L21/76849 , C23C16/02 , C23C16/56 , H01L21/28556 , H01L21/76834 , H01L21/76883 , Y10T428/13
摘要： The present invention relates to the improved adhesion between a patterned conductive metal layer, usually a copper layer, and a patterned barrier dielectric layer. The structure with the improved adhesion comprises an adhesion layer between a patterned barrier dielectric layer and a patterned conductive metal layer. The adhesion layer improves adhesion between the metal layer and the barrier layer without increasing the copper bulk electrical resistance. The method of making the structure with the improved adhesion comprises steps of thermal expositing the patterned conductive metal layer to an organometallic precursor to deposit an adhesion layer at least on the top of the patterned conductive metal layer.

2. 发明公开

EP2339049A1 Precursors for providing materials with low dielectric constant and superior integration attributes 审中-公开
标题翻译：起始材料，以提供具有低介电常数的材料和优良的集成性能
公开(公告)号：EP2339049A1
公开(公告)日：2011-06-29
申请号：EP10196872.5
申请日：2010-12-23
申请人： Air Products and Chemicals, Inc.
发明人： Haas, Mary Kathryn , Vrtis, Raymond Nicholas , Matz, Laura M.
IPC分类号： C23C16/40 , C03C3/04 , H01L21/316 , H01L21/312 , C23C16/56
CPC分类号： H01L21/02214 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/02348
摘要： A porous organosilica glass film is deposited via a deposition process comprising: introducing into a vacuum chamber gaseous reagents including one precursor of an organosilane or an organosiloxane, and a porogen distinct from the precursor, wherein the porogen is aromatic in nature; applying energy to the gaseous reagents in the chamber to induce reaction of the gaseous reagents to deposit a film, containing the porogen; and removing a portion or substantially all of the organic material by UV radiation to provide the porous film with pores and a dielectric constant less than 2.6.
摘要翻译：的多孔有机硅玻璃薄膜沉积过程通过包含沉积：引入到真空室中的气态试剂包括有机硅烷或有机硅氧烷于一种前体和致孔剂从所述前体不同，worin致孔剂在性质上是芳族的; 在腔室将能量施加到气态反应物以引发气态反应物的反应以沉积膜，包含所述致孔剂; 并通过UV辐射除去一部分或基本上所有的有机材料，以提供所述多孔膜具有细孔的介电常数小于2.6。

3. 发明公开

EP2105960A3 Improved adhesion to copper and copper electromigration resistance 有权转让
标题翻译： Verbesserte Haftung一个Kupferfür动物desserten Kupfer-Elektromigrationswiderstand
公开(公告)号：EP2105960A3
公开(公告)日：2012-04-04
申请号：EP09155899.9
申请日：2009-03-23
申请人： Air Products and Chemicals, Inc.
发明人： Vrtis, Raymond Nicholas , Matz, Laura M. , O'Neill, Mark Leonard
IPC分类号： H01L21/768 , C23C16/18
CPC分类号： H01L21/76849 , C23C16/02 , C23C16/56 , H01L21/28556 , H01L21/76834 , H01L21/76883 , Y10T428/13
摘要： The present invention relates to the improved adhesion between a patterned conductive metal layer, usually a copper layer, and a patterned barrier dielectric layer. The structure with the improved adhesion comprises an adhesion layer between a patterned barrier dielectric layer and a patterned conductive metal layer. The adhesion layer improves adhesion between the metal layer and the barrier layer without increasing the copper bulk electrical resistance. The method of making the structure with the improved adhesion comprises steps of thermal expositing the patterned conductive metal layer to an organometallic precursor to deposit an adhesion layer at least on the top of the patterned conductive metal layer.
摘要翻译：本发明涉及图案化的导电金属层（通常为铜层）和图案化阻挡介电层之间的改进的粘附性。具有改进的粘合性的结构包括在图案化阻挡介电层和图案化导电金属层之间的粘合层。粘附层提高了金属层与阻挡层之间的粘附性，而不增加铜体电阻。制备具有改进的粘附性的结构的方法包括将图案化的导电金属层热展开到有机金属前体的步骤，以至少在图案化的导电金属层的顶部沉积粘合层。

4. 发明公开

EP2251899A1 Dielectric barrier deposition using nitrogen containing precursor 有权
标题翻译： Abscheidung einer dielektrischen Sperre mittels stickstoffhaltigemVorläufer
公开(公告)号：EP2251899A1
公开(公告)日：2010-11-17
申请号：EP10162780.0
申请日：2010-05-13
申请人： Air Products and Chemicals, Inc.
发明人： Mallikarjunan, Anupama , Vrtis, Raymond Nicholas , Matz, Laura M. , O'Neill, Mark Leonard , Johnson, Andrew David , Xiao, Manchao
IPC分类号： H01L21/768 , C23C16/36
CPC分类号： C23C16/36 , H01L21/02167 , H01L21/02211 , H01L21/02274 , H01L21/3148 , H01L21/76831 , H01L21/76834
摘要： A process for forming a silicon carbonitride barrier dielectric film between a dielectric film and a metal interconnect of an integrated circuit substrate, comprising the steps of;
providing an integrated circuit substrate having a dielectric film or a metal interconnect;
contacting the substrate with a barrier dielectric film precursor comprising:

R x R y (NR"R"') z Si

wherein R, R', R" and R"' are each individually selected from hydrogen, linear or branched saturated or unsaturated alkyl, or aromatic; wherein x+y+z=4; z = 1 to 3; but R, R' cannot both be hydrogen; and where z = 1 or 2 then each of x and y are at least 1;
forming the silicon carbonitride barrier dielectric film with C/Si ratio>0.8 and a N/Si ratio >0.2 on the integrated circuit substrate.
摘要翻译：一种在电介质膜和集成电路基板的金属互连之间形成碳氮化硅阻挡电介质膜的方法，包括以下步骤：提供具有电介质膜或金属互连的集成电路基板; 其中R，R'，R“和R”（R“，R”），其中R，R'，R“和R “”各自独立地选自氢，直链或支链饱和或不饱和的烷基或芳族; 其中x + y + z = 4; z = 1〜3; 但R，R'不能都是氢; 并且其中z = 1或2，那么x和y中的每一个至少为1; 在集成电路基板上形成C / Si比> 0.8且N / Si比> 0.2的碳氮化硅势垒电介质膜。

5. 发明授权

EP2105960B1 Improved adhesion to copper and copper electromigration resistance 有权转让
标题翻译：改善对铜和铜电迁移阻力的附着力
公开(公告)号：EP2105960B1
公开(公告)日：2017-08-02
申请号：EP09155899.9
申请日：2009-03-23
申请人： Air Products and Chemicals, Inc.
发明人： Vrtis, Raymond Nicholas , Matz, Laura M. , O'Neill, Mark Leonard
IPC分类号： H01L21/768 , H01L21/285 , C23C16/02 , C23C16/18 , C23C16/56
CPC分类号： H01L21/76849 , C23C16/02 , C23C16/56 , H01L21/28556 , H01L21/76834 , H01L21/76883 , Y10T428/13

6. 发明授权

EP2196557B1 Precursors for depositing group 4 metal-containing films 有权
标题翻译：含有起始化合物为层的沉积，所述组4金属
公开(公告)号：EP2196557B1
公开(公告)日：2011-08-24
申请号：EP09178772.1
申请日：2009-12-10
申请人： AIR PRODUCTS AND CHEMICALS, INC.
发明人： Lei, Xinjian , Spence, Daniel P. , Kim, Moo-Sung , Buchanan, Iain , Matz, Laura M. , Ivanov, Sergei Vladimirovich
IPC分类号： C23C16/18 , C23C16/40 , C23C16/455 , C07F3/00 , C07F7/00
CPC分类号： C23C16/455 , C07F7/006 , C23C16/18 , C23C16/40

7. 发明公开

EP2196557A1 Precursors for depositing group 4 metal-containing films 有权
标题翻译：含有起始化合物为层的沉积，所述组4金属
公开(公告)号：EP2196557A1
公开(公告)日：2010-06-16
申请号：EP09178772.1
申请日：2009-12-10
申请人： AIR PRODUCTS AND CHEMICALS, INC.
发明人： Lei, Xinjian , Spence, Daniel P. , Kim, Moo-Sung , Buchanan, Iain , Matz, Laura M. , Ivanov, Sergei Vladimirovich
IPC分类号： C23C16/18 , C23C16/40 , C23C16/455 , C07F3/00 , C07F7/00
CPC分类号： C23C16/455 , C07F7/006 , C23C16/18 , C23C16/40
摘要： Described herein are Group 4 metal-containing precursors, compositions comprising Group 4 metal-containing precursors, and deposition processes for fabricating conformal metal containing films on substrates. In one aspect, the Group 4 metal-containing precursors are represented by the following formula I:

wherein M is a metal chosen from Ti, Zr, and Hf; R and R 1 are each independently selected from an alkyl group comprising from 1 to 10 carbon atoms; R 2 is an alkyl group comprising from 1 to 10 carbon atoms and R 3 is chosen from hydrogen or an alkyl group comprising from 1 to 3 carbon atoms, or R 2 and R 3 together form a C 2 to C 6 alkylene group; R 4 is an alkyl group comprising from 1 to 6 carbon atoms and wherein R 2 and R 4 are different alkyl groups. Also described herein are methods for making Group 4 metal-containing precursors and methods for depositing films using the Group 4 metal-containing precursors.
摘要翻译：在描述的是第4族含金属前体，一种用于制造共形的含金属在基板上的膜组合物，包含第4族前体包含金属的，和沉积工艺。在一个方面，第4族含金属前体由下式I表示：worin M是选自Ti，Zr和Hf中选择的金属; R和R 1各自unabhängig从烷基，1至10个含有碳原子的选择; R 2为烷基，其包括1至10个碳原子，且R 3选自氢或烷基，1至3个碳原子，其包括的，或R 2和R 3中选择一起形成C 2〜C 6亚烷基; R 4为烷基，其包括1至6个碳原子和worin R 2和R 4是不同的烷基。因此，在一些方法描述用于制备第4族含金属前体以及使用该含第4族金属的前体沉积的薄膜的方法。

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