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1. 发明公开

EP2357059A3 Method for chemical mechanical planarization of a tungsten-containing substrate 有权转让
标题翻译：用于含钨衬底的化学机械平面化的方法
公开(公告)号：EP2357059A3
公开(公告)日：2017-06-21
申请号：EP11154526.5
申请日：2011-02-15
申请人： Air Products and Chemicals, Inc.
发明人： McConnell, Rachel Dianne , Meyers, Ann Marie , Shi, Xiaobo
IPC分类号： B24B37/04 , C09G1/02 , H01L21/321
CPC分类号： H01L21/3212 , B24B37/044 , C09G1/02
摘要： The titled method affords low dishing levels in the polished substrate while simultaneously affording high metal removal rates. The method utilizes an associated polishing composition. Components in the composition include a poly(alkyleneimine) such as polyethyleneimine, an abrasive, an acid, and an oxidizing agent, such as a per-compound.
摘要翻译：该标题方法在抛光基材中提供了低的碟状凹陷水平，同时提供了高金属去除率。该方法使用相关的抛光组合物。组合物中的组分包括聚（亚烷基亚胺）如聚乙烯亚胺，研磨剂，酸和氧化剂，例如每种化合物。

2. 发明公开

EP2779217A2 Chemical mechanical planarization for tungsten-containing substrates 审中-公开
标题翻译： Chemisch-mechanische Planarisierungfürwolframhaltige基材
公开(公告)号：EP2779217A2
公开(公告)日：2014-09-17
申请号：EP14158825.1
申请日：2014-03-11
申请人： AIR PRODUCTS AND CHEMICALS, INC.
发明人： Shi, Xiaobo , Zhou, Hongjun , Lew, Blake J. , Schlueter, James Allen , Schwartz, Jo-Ann Theresa
IPC分类号： H01L21/321 , C09G1/02
CPC分类号： H01L21/30625 , C09G1/02 , H01L21/3212
摘要： Chemical mechanical polishing (CMP) compositions for polishing tungsten or tungsten-containing substrates comprise an abrasive, at least one solid catalyst, a chemical additive selected from the groups consisting of piperazine derivatives, salts of cyanate, and combinations thereof; and a liquid carrier. Systems and processes use the aqueous formulations for polishing tungsten or tungsten-containing substrates.
摘要翻译：用于抛光钨或含钨衬底的化学机械抛光（CMP）组合物包括研磨剂，至少一种固体催化剂，选自哌嗪衍生物，氰酸盐及其组合的化学添加剂; 和液体载体。系统和方法使用水性配方来抛光含钨或钨的衬底。

3. 发明公开

EP2803704A3 Metal compound coated colloidal particles process for making and use therefor 审中-公开
标题翻译：金属化合物涂覆的胶体颗粒和制备和使用它的过程
公开(公告)号：EP2803704A3
公开(公告)日：2015-06-17
申请号：EP14164676.0
申请日：2014-04-15
申请人： AIR PRODUCTS AND CHEMICALS, INC.
发明人： Zhou, Hongjun , Shi, Xiaobo , Schleuter, James A. , Schwartz, Jo-Ann T.
IPC分类号： C09C1/30 , B22F1/02 , C09K3/14 , C01B33/149 , H01L21/304 , C23C18/00 , B01J23/745 , C09G1/02 , H01L21/306 , H01L21/321 , C01B13/36
CPC分类号： B01J23/745 , B01J35/0013 , C01B13/145 , C01P2002/85 , C01P2004/04 , C01P2004/32 , C01P2004/64 , C01P2004/84 , C09C1/3054 , C09G1/02 , C09K3/1445 , H01L21/30625 , H01L21/3212
摘要： Solid metal compound coated colloidal particles are made through a process by coating metal compounds onto colloidal particle surfaces. More specifically, metal compound precursors react with the base solution to form solid metal compounds. The solid metal compounds are deposited onto the colloidal particle surfaces through bonding. Excess ions are removed by ultrafiltration to obtain the stable metal compound coated colloidal particle solutions. Chemical mechanical polishing (CMP) polishing compositions using the metal compound coated colloidal particles prepared by the process as the solid state catalyst, or as both catalyst and abrasive, provide uniform removal profiles across the whole wafer.

4. 发明公开

EP2662427A2 Chemical mechanical polishing composition having chemical additives and methods for using same 有权转让
标题翻译：与化学添加剂和其使用方法的化学机械抛光组合物
公开(公告)号：EP2662427A2
公开(公告)日：2013-11-13
申请号：EP13167334.5
申请日：2013-05-10
申请人： AIR PRODUCTS AND CHEMICALS, INC.
发明人： Shi, Xiaobo , Schlueter, James Allen , Graham, Maitland Gary , Stoeva, Savka I. , Henry, James Matthew
IPC分类号： C09G1/02
CPC分类号： C09G1/02 , H01L21/31053
摘要： Chemical-mechanical polishing (CMP) compositions containing chemical additives and methods of using the CMP compositions are disclosed. The CMP composition comprises an abrasive; a chemical additive selected from i) piperazine derivatives, ii) 4-morpholine derivatives, iii) organic amino sulfonic acid derivatives and their salts, iv) substituted amine compounds and their salts, v) bis-amine compounds and their salts and a liquid carrier and having a pH of 2-8. The CMP compositions and the methods provide enhanced removing rate for "SiC" , SiN" and "SiC x N y " films; and tunable removal selectivity for "SiC" with respect to SiO 2 , "SiN" with respect to SiO 2 , "SiC" with respect to "SiN", or "SiC x N y " with respect to SiO 2 ; wherein x ranges from 0.1wt% to 55wt%, y ranges from 0.1 wt % to 32 wt %.
摘要翻译：含化学添加剂以及使用该CMP组合物的方法的化学机械抛光（CMP）的组合物是游离缺失光盘。的磨料的CMP组合物包含：选自i的化学添加剂）哌嗪衍生物，ⅱ）4-吗啉衍生物，ⅲ）有机氨基磺酸衍生物和它们的盐，ⅳ）substituiertem胺化合物和它们的盐，v）的双 - 胺化合物及其盐和液体载体和pH为2-8。 CMP组合物和方法提供了增强的对“碳化硅”的SiN“和”碳化硅×N个Y“膜;以及可调谐去除选择性为”除去率的SiC“相对于SiO 2的”的SiN“相对于SiO 2的，” 碳化硅“相对于”的SiN“或”碳化硅×N个Y“相对于SiO 2的;从最多0.1重量％worin x为至55重量％，y为0.1重量％至32重量％。

5. 发明公开

EP2865727A1 Barrier chemical mechanical planarisation // polishing composition and method of use thereof 有权转让
标题翻译：化学机械研磨的阻挡层组合物和使用它们的方法
公开(公告)号：EP2865727A1
公开(公告)日：2015-04-29
申请号：EP14187593.0
申请日：2014-10-03
申请人： AIR PRODUCTS AND CHEMICALS, INC.
发明人： Graham, Maitland Gary , Schlueter, James Allen , Shi, Xiaobo
IPC分类号： C09G1/02
CPC分类号： C09G1/02 , C09K3/1463 , H01L21/30625 , H01L21/3212
摘要： A barrier chemical mechanical planarisation polishing composition is provided that comprises abrasive and suitable chemical additives. The suitable chemical additives are organic polymer molecules containing ethylene oxide repeating units having the general molecular structure of

where n refers to the total numbers of the repeating unit ranging from 6,818 to 181,817; and the molecular weights of polyethylene oxide range from 100,000 to 8,000,000. There is also provided a chemical mechanical polishing method using the barrier chemical mechanical planarization polishing composition.
摘要翻译：提供化学机械平面化的抛光组合物的阻挡确实包括磨料和合适的化学添加剂。合适的化学添加剂是含有氧化乙烯重复具有其中n指重复单元范围从6.818到181.817的总数一般分子结构单元的有机聚合物分子; 和聚环氧乙烷范围的分子量为100,000至8,000,000。从而提供了一种使用阻挡化学机械平坦化抛光组合物中的化学机械研磨方法。

6. 发明公开

EP2818526A1 Chemical mechanical polishing slurry compositions and method using the same for copper and through-silicon via applications 有权
标题翻译：组合物用于化学机械抛光的方法，从而为铜和硅Durchkontaktierungsanwendungen
公开(公告)号：EP2818526A1
公开(公告)日：2014-12-31
申请号：EP14174709.7
申请日：2014-06-27
申请人： AIR PRODUCTS AND CHEMICALS, INC.
发明人： Shi, Xiaobo , Murella, Krishna P. , Schlueter, James Allen , Choo, Jae Ouk
IPC分类号： C09G1/02 , H01L21/321
CPC分类号： H01L21/3212 , B24B1/00 , C09G1/00 , C09G1/02 , C09G1/04 , C09G1/06 , C09K3/1409 , C09K3/1463 , C09K13/06 , H01L21/30625 , H01L21/76898
摘要： Provided are novel chemical mechanical polishing (CMP) slurry compositions for polishing copper substrates and method of using the CMP compositions. The CMP slurry compositions deliver superior planarization with high and tunable removal rates and low defects when polishing bulk copper layers of the nanostructures of IC chips. The CMP slurry compositions also offer the high selectivity for polishing copper relative to the other materials (such as Ti, TiN, Ta, TaN, and Si), suitable for through-silicon via (TSV) CMP process which demands high copper film removal rates.
摘要翻译：本发明提供用于抛光铜基板以及使用该CMP组合物的方法，新的化学机械抛光（CMP）浆料组合物。 CMP浆料组合物提供优异的平坦化具有高和可调谐去除速率和低的缺陷当抛光IC芯片的纳米结构的块状铜层。因此，CMP浆料组合物提供高的选择性相对于铜抛光其它材料（颜色：诸如钛，氮化钛，钽，氮化钽，和Si），适用于通孔（TSV）CMP工艺这要求高的铜膜的移除速率穿透硅，

7. 发明公开

EP2722873A1 CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION FOR SHALLOW TRENCH ISOLATION (STI) APPLICATIONS AND METHODS OF MAKING THEREOF 有权转让
标题翻译：组合物用于平严重隔离（STI）化学 - 机械抛光（CMP）应用程序，以及它们的制备方法
公开(公告)号：EP2722873A1
公开(公告)日：2014-04-23
申请号：EP13189440.4
申请日：2013-10-18
申请人： AIR PRODUCTS AND CHEMICALS, INC.
发明人： Shi, Xiaobo , Hughes, John Edward Quincy , Zhou, Hongjun , Castillo, II, Daniel Hernandez , Choo, Jae Ouk , Schlueter, James Allen , Schwartz, Jo-Ann Theresa , Nbach, Laura Lede , Winchester, Steven Charles , Usmani, Saifi , Marsella, John Anthony
IPC分类号： H01L21/306 , H01L21/3105 , C09G1/02 , C09K3/14
CPC分类号： C09G1/02 , B24B1/00 , C01F17/00 , C01F17/0043 , C01P2004/52 , C01P2004/62 , C09K3/1409 , C09K3/1463 , G09G1/02 , H01L21/31053 , H01L21/31055 , H01L21/76224
摘要： Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at lease a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.
摘要翻译：用于去除，减少或治疗由氧化铈粒子，氧化铈浆料或用于浅沟槽隔离化学机械抛光（CMP）组合物的痕量金属污染物和较小的细尺寸的氧化铈粒子的方法（STI）工艺施加。将处理过的化学机械抛光（CMP）组合物，或CMP抛光通过使用治疗氧化铈颗粒或经处理的氧化铈浆料制备的组合物用于抛光基材做在租赁含有表面包括二氧化硅膜用于STI（浅沟槽隔离）加工和应用。减小的纳米尺寸的粒子有关的缺陷已经观察到，由于减少的痕量金属离子污染物和降低在浅沟槽隔离（STI）CMP抛光非常小的细氧化铈粒子。

8. 发明公开

EP2662427A3 Chemical mechanical polishing composition having chemical additives and methods for using same 有权转让
标题翻译：与化学添加剂和其使用方法的化学机械抛光组合物
公开(公告)号：EP2662427A3
公开(公告)日：2014-01-01
申请号：EP13167334.5
申请日：2013-05-10
申请人： AIR PRODUCTS AND CHEMICALS, INC.
发明人： Shi, Xiaobo , Schlueter, James Allen , Graham, Maitland Gary , Stoeva, Savka I. , Henry, James Matthew
IPC分类号： C09G1/02 , H01L21/3105
CPC分类号： C09G1/02 , H01L21/31053
摘要： Chemical-mechanical polishing (CMP) compositions containing chemical additives and methods of using the CMP compositions are disclosed. The CMP composition comprises an abrasive; a chemical additive selected from i) piperazine derivatives, ii) 4-morpholine derivatives, iii) organic amino sulfonic acid derivatives and their salts, iv) substituted amine compounds and their salts, v) bis-amine compounds and their salts and a liquid carrier and having a pH of 2-8. The CMP compositions and the methods provide enhanced removing rate for "SiC" , SiN" and "SiC x N y " films; and tunable removal selectivity for "SiC" with respect to SiO 2 , "SiN" with respect to SiO 2 , "SiC" with respect to "SiN", or "SiC x N y " with respect to SiO 2 ; wherein x ranges from 0.1wt% to 55wt%, y ranges from 0.1 wt % to 32 wt %.

9. 发明授权

EP2865727B1 Barrier chemical mechanical planarisation // polishing composition and method of use thereof 有权转让
标题翻译：化学机械研磨的阻挡层组合物和使用它们的方法
公开(公告)号：EP2865727B1
公开(公告)日：2017-03-29
申请号：EP14187593.0
申请日：2014-10-03
申请人： AIR PRODUCTS AND CHEMICALS, INC.
发明人： Graham, Maitland Gary , Schlueter, James Allen , Shi, Xiaobo
IPC分类号： C09G1/02
CPC分类号： C09G1/02 , C09K3/1463 , H01L21/30625 , H01L21/3212

10. 发明授权

EP2818526B1 Chemical mechanical polishing slurry compositions and method using the same for copper and through-silicon via applications 有权
标题翻译：组合物用于化学机械抛光的方法，从而为铜和硅Durchkontaktierungsanwendungen
公开(公告)号：EP2818526B1
公开(公告)日：2016-06-22
申请号：EP14174709.7
申请日：2014-06-27
申请人： AIR PRODUCTS AND CHEMICALS, INC.
发明人： Shi, Xiaobo , Murella, Krishna P. , Schlueter, James Allen , Choo, Jae Ouk
IPC分类号： C09G1/02 , H01L21/321 , C09K3/14
CPC分类号： H01L21/3212 , B24B1/00 , C09G1/00 , C09G1/02 , C09G1/04 , C09G1/06 , C09K3/1409 , C09K3/1463 , C09K13/06 , H01L21/30625 , H01L21/76898
摘要： Provided are novel chemical mechanical polishing (CMP) slurry compositions for polishing copper substrates and method of using the CMP compositions. The CMP slurry compositions deliver superior planarization with high and tunable removal rates and low defects when polishing bulk copper layers of the nanostructures of IC chips. The CMP slurry compositions also offer the high selectivity for polishing copper relative to the other materials (such as Ti, TiN, Ta, TaN, and Si), suitable for through-silicon via (TSV) CMP process which demands high copper film removal rates.

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