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    • 4. 发明公开
    • SURFACE ACOUSTIC WAVE FUNCTIONAL DEVICE
    • FUNKTIONSVORRICHTUNG MIT AKUSTISCHENOBERFLÄCHENWELLEN
    • EP0913935A1
    • 1999-05-06
    • EP97930844.2
    • 1997-07-18
    • Asahi Kasei Kogyo Kabushiki KaishaYamanouchi, Kazuhiko
    • YAMANOUCHI, KazuhikoODAGAWA, HiroyukiSATO, WasukeKUZE, NaohiroGOTO, Hiromasa
    • H03H9/145H03H9/72
    • H03H9/02976G06G7/195
    • The surface acoustic wave functional element comprises a semiconductor layer provided on a piezoelectric substrate or a piezoelectric film substrate and makes use of interaction between a surface acoustic wave propagating on the substrate and electrons in the substrate layer, but has the semiconductor layer disposed outside above the propagation path for propagating a surface acoustic wave, comprises a plurality of grating electrodes perpendicularly above and to the propagation path and moreover the semiconductor layer comprises an active layer and a buffer layer lattice-matching thereto. By use of this surface acoustic wave functional element, a surface acoustic wave amplifier capable of providing a high amplification gain at a practical low voltage, a surface acoustic wave convolver having a higher efficiency than ever or the like are offered.
    • 表面声波功能元件包括设置在压电基板或压电薄膜基板上的半导体层,并且利用在基板上传播的表面声波与基板层中的电子之间的相互作用,但是半导体层设置在 用于传播表面声波的传播路径包括垂直于传播路径上方的多个光栅电极,此外,半导体层包括与其晶格匹配的有源层和缓冲层。 通过使用这种表面声波功能元件,提供了能够在实际的低电压下提供高放大增益的表面声波放大器,具有比以往更高效率的表面声波卷积器等。
    • 8. 发明公开
    • SURFACE ACOUSTIC WAVE CONVERTER AND ACOUSTIC WAVE FILTER USING THE SAME
    • AKUSTISCHEROBERFLÄCHENKONVERTERUND AKUSTISCHES WELLENFILTER DAMIT
    • EP0802627A1
    • 1997-10-22
    • EP96937539.3
    • 1996-11-08
    • NGK INSULATORS, LTD.Takeuchi, MasaoYamanouchi, Kazuhiko
    • TAKEUCHI, MasaoYAMANOUCHI, KazuhikoODAGAWA, HiroyukiTANAKA, Mitsuhiro
    • H03H9/145H03H9/64
    • H03H9/14547H03H9/02716H03H9/14505H03H9/14517H03H9/14552H03H9/14594
    • In order to provide a transducer suitable for an anisotropic substrate having the NSPUDT property, on the anisotropic piezoelectric substrate being cut to have the NSPUDT property, there is formed a transducer structure having an exciting electrode structure (21) and a reflector structure (22). When λ is a wavelength of a fundamental surface acoustic wave, said exciting electrode structure (21) includes a positive electrode (23) having a plurality of electrode fingers arranged at a pitch λ and a negative electrode (24) having at least one electrode finger interdigitally arranged between said electrode fingers of the positive electrode with a center distance of λ/2. The reflector transducer (22) includes a plurality of electrode fingers arranged with a center distance of λ/2, and a distance L g between said exciting electrode structure (21) and the reflector structure (22) is set to L g = (2n+1)λ/4 (n being a positive integer).
    • 为了提供适合于具有NSPUDT特性的各向异性基板的换能器,在被切割为具有NSPUDT特性的各向异性压电基片上形成具有激发电极结构(21)和反射器结构(22)的换能器结构, 。 当λ是基音表面波的波长时,所述激励电极结构(21)包括具有以间距λ布置的多个电极指的正极(23)和具有至少一个电极指的负极(24) 以正中心距离为λ/ 2的方式布置在正电极的所述电极指之间。 反射器换能器(22)包括以中心距离λ/ 2布置的多个电极指,并且所述激励电极结构(21)和反射器结构(22)之间的距离Lg被设置为Lg =(2n + 1 )λ/ 4(n为正整数)。