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1. 发明公开

EP3235006A1 TRANSISTOR HEMT 无效
标题翻译：晶体管HEMT
公开(公告)号：EP3235006A1
公开(公告)日：2017-10-25
申请号：EP15821120.1
申请日：2015-12-15
申请人： Centre National de la Recherche Scientifique (C.N.R.S.) , Universite Libanaise
发明人： MORANCHO, Frédéric , HAMADY, Saleem , BEYDOUN, Bilal
IPC分类号： H01L29/778 , H01L21/338 , H01L21/336 , H01L29/10 , H01L29/20
CPC分类号： H01L29/66462 , H01L29/1054 , H01L29/1075 , H01L29/1083 , H01L29/2003 , H01L29/778 , H01L29/7786
摘要： Semiconductor heterojunction structure, i.e. what is also referred to as a heterostructure, especially for a high electron mobility transistor (HEMT), comprising a substrate (4) and a stack of at least three buffer layers made of the same semiconductor of wide bandgap EG1 based on a nitride of column, namely an unintentionally doped first buffer layer (6), a second buffer layer (8) and an unintentionally doped third buffer layer (10), an unintentionally doped intermediate layer (11) and a barrier layer (12) that is placed on the intermediate layer (11), said barrier layer (12) being made of a semiconductor of wide bandgap EG2 based on a nitride of column III; the second buffer layer (8) has a constant p
+ -type dopant concentration through all or some of its thickness; and the third buffer layer (10) has a first unintentionally doped region (16) right through its thickness and at least one second region (18) adjacent said first region with an n
+ doping surrounding the first region (16).
摘要翻译：半导体异质结结构，即也被称为异质结构，特别是用于高电子迁移率晶体管（HEMT）的异质结结构，包括衬底（4）和由基于宽带隙EG1的相同半导体制成的至少三个缓冲层的堆叠（6），第二缓冲层（8）和非故意掺杂的第三缓冲层（10），非故意掺杂的中间层（11）和阻挡层（12）的氮化物层上，其被置于中间层（11）上，所述阻挡层（12）由基于列III的氮化物的宽带隙EG2的半导体制成; 第二缓冲层（8）在其全部或部分厚度上具有恒定的p +型掺杂剂浓度; 和第三缓冲层（10）具有正好穿过其厚度的第一非有意掺杂区域（16）和至少一个第二区域（18），所述第二区域与所述第一区域（16）周围的n +掺杂相邻。

3. 发明公开

EP3273736A1 METHOD AND APPARATUS FOR POWER AND USER DISTRIBUTION TO SUB-BANDS IN NOMA SYSTEMS 有权
标题翻译：用于功率和用户分配到NOMA系统中的子带的方法和设备
公开(公告)号：EP3273736A1
公开(公告)日：2018-01-24
申请号：EP16305929.8
申请日：2016-07-19
申请人： INSTITUT MINES TELECOM / TELECOM BRETAGNE , Universite Libanaise , Universite Saint-Esprit de Kaslik
发明人： HOJEIJ, Marie-Rita , FARAH, Joumana , ABDEL NOUR, Charbel , DOUILLARD, Catherine
IPC分类号： H04W72/04 , H04W72/08 , H04W72/12 , H04W52/24 , H04W52/26 , H04W52/34 , H04W52/36
CPC分类号： H04W52/346 , H04W52/225 , H04W52/242 , H04W52/267 , H04W52/367 , H04W72/0446 , H04W72/0473
摘要： Power allocation in NOMA systems for example on the basis Proportional Fairness calculations depends on knowledge of user throughput on a specified sub-band, which implies that users have already been allocated to particular sub-bands. Meanwhile, maximum throughput can generally be achieved where there is the greatest possible difference in transmission power for the users on a given sub-band, so that optimal allocation of users to sub-bands requires knowledge of the power available for each user. A mechanism is proposed based on iteratively applying a waterfilling algorithm to distribute power across a progressive subset of sub-bands to provisionally distribute the power budget across that subset of sub-bands, where at each iteration the water filling algorithm is carried out for each possible combination of users assignable to the newly considered sub-band using a floor for that sub band proportional to the reciprocal of the square of the highest channel gain value of any user in that combination, and calculating a throughput for that combination with the corresponding power attribution, whereby the combination retained for the next iteration (with an additional sub-band) is whichever gives the highest throughput. This process is thus repeated until users are assigned to all sub-bands, whereupon power allocations from the last iteration are definitive.
摘要翻译：例如，在NOMA系统中的功率分配比例公平计算取决于对指定子带上的用户吞吐量的了解，这意味着用户已经被分配到特定的子带。同时，通常可以在给定子带上的用户的传输功率中存在最大可能差异的情况下实现最大吞吐量，使得用户对子带的最优分配需要知道每个用户可用的功率。提出了基于迭代地应用水填充算法来跨越子带的渐进子集分配功率以跨子带的子集临时分布功率预算的机制，其中在每次迭代时对每种可能的水填充算法使用该子频带的发言权与该组合中任何用户的最高信道增益值的平方的倒数成比例的分配给新近考虑的子频带的用户的组合，并且计算具有相应功率归因的该组合的吞吐量由此保留用于下一次迭代（具有附加子带）的组合是取得最高吞吐量的那个组合。因此重复这个过程，直到用户被分配到所有的子频带，因此来自上一次迭代的功率分配是确定的。

4. 发明公开

EP3055886A1 TRANSISTOR HEMT À BASE D'HETEROJONCTION 无效
标题翻译： HEMT AUS EINEMHETEROÜBERGANG
公开(公告)号：EP3055886A1
公开(公告)日：2016-08-17
申请号：EP14824049.2
申请日：2014-10-10
申请人： Centre National de la Recherche Scientifique (CNRS) , Universite Libanaise
发明人： MORANCHO, Frédéric , HAMADY, Saleem , BEYDOUN, Bilal
IPC分类号： H01L29/778 , H01L29/10
CPC分类号： H01L29/7787 , H01L29/1029 , H01L29/2003 , H01L29/66431 , H01L29/7783
摘要： A heterojunction structure, also called a hetero-structure, made from a semiconductor material, in particular for a high electron mobility transistor (HEMT) comprising a substrate, a buffer layer disposed on the substrate made from a wide-bandgap semiconductor material made from a column-III nitride, said buffer layer (1) being unintentionally doped with N-type carriers, a barrier layer, disposed on top of the buffer layer, made from a wide-bandgap Eg2 semiconductor material made from a column-III nitride, the width of bandgap Eg2 of the barrier layer being less than the width of bandgap Eg1 of the buffer layer. The heterojunction structure further comprises an intentionally doped area, made from a column-III material identical to the material of the buffer layer, in a plane parallel to the plane of the substrate and having a thickness defined in a direction orthogonal to the plane of the substrate, said area being included in the buffer layer.
摘要翻译：对于高电子迁移率晶体管，用于高电子迁移率晶体管的异质结结构包括基于来自第III列的氮化物的大带隙半导体材料的布置在衬底上的衬底，缓冲层，其中缓冲层不是有意地掺杂有基于来自第III列的氮化物的大带隙半导体材料的n型载流子，设置在缓冲层上方的阻挡层，其中阻挡层的带隙的宽度小于缓冲层的带隙的宽度。异质结结构还包括有意掺杂的区域，基于与平行于衬底的平面平行的平面中的与缓冲层的材料相同的列III的氮化物的材料和沿着与该平面垂直的方向的预定厚度的衬底，其中该区域包括在缓冲层中。

7. 发明公开

EP3337268A1 METHOD AND APPARATUS FOR USER DISTRIBUTION TO SUB BANDS IN NOMA SYSTEMS ACCORDING TO A WEIGHTED PROPORTIONAL FAIRNESS SCHEME 有权
公开(公告)号：EP3337268A1
公开(公告)日：2018-06-20
申请号：EP16306722.6
申请日：2016-12-19
申请人： INSTITUT MINES TELECOM / TELECOM BRETAGNE , Universite Libanaise , Universite Saint-Esprit de Kaslik
发明人： HOJEIJ, Marie-Rita , FARAH, Joumana , ABDEL NOUR, Charbel , DOUILLARD, Catherine
IPC分类号： H04W72/12
CPC分类号： H04W28/0236 , H04B7/0626 , H04L25/0204 , H04W28/18 , H04W28/26 , H04W72/0453 , H04W72/121 , H04W72/1215 , H04W72/1226 , H04W72/1236
摘要： A scheduling mechanism for attributing users to resources of a plurality of sub bands in a time slot t in a multiple access communications system, said method comprising assigning a combination of users to a sub band on a Proportional Fairness basis, so as to determine which combination of users maximizes a Proportional Fairness performance metric for that channel, wherein the performance metric is weighted by a weighting factor reflecting the difference for that user between a target throughput and a projected throughput. The projected throughput is equal to the sum of the achievable throughputs for the considered user on each subband, while the target throughput is defined for the user and may be fixed as a multiple of the average throughput per used over a period of time preceding the current timeslot.

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